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1. 发明授权

US07632742B2 Substrate for growing Pendeo epitaxy and method of forming the same 有权
标题翻译：用于生长Pendeo外延的底物及其形成方法
公开(公告)号：US07632742B2
公开(公告)日：2009-12-15
申请号：US11650981
申请日：2007-01-09
申请人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
发明人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
IPC分类号： H01L21/20
CPC分类号： C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
摘要翻译：提供了一种外延生长衬底及其制造方法。骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

2. 发明申请

US20070190755A1 Substrate for growing Pendeo epitaxy and method of forming the same 有权
标题翻译：用于生长Pendeo外延的底物及其形成方法
公开(公告)号：US20070190755A1
公开(公告)日：2007-08-16
申请号：US11650981
申请日：2007-01-09
申请人： Ho-sun Paek , Tae-hoon Jang , Youn-Joon Sung , Tan Sakong , Min-ho Yang
发明人： Ho-sun Paek , Tae-hoon Jang , Youn-Joon Sung , Tan Sakong , Min-ho Yang
IPC分类号： H01L21/20
CPC分类号： C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
摘要翻译：提供了一种外延生长衬底及其制造方法。骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

3. 发明授权

US07483463B2 Ridge-waveguide semiconductor laser diode 有权
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07483463B2
公开(公告)日：2009-01-27
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要翻译：提供了具有改进的电流注入结构的脊 - 波导半导体激光二极管。脊波导半导体激光二极管包括：基板; 形成在所述基板上的下部多半导体层; 形成在下多层半导体层上的有源层; 具有脊部并形成在有源层上的上多层半导体层; 以及形成在所述上多层半导体层上的上电极，其中所述上电极覆盖所述脊部的至少一个侧表面。

4. 发明申请

US20060280215A1 Ridge-waveguide semiconductor laser diode 有权
公开(公告)号：US20060280215A1
公开(公告)日：2006-12-14
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.

5. 发明申请

US20060251137A1 Semiconductor laser diode and method for manufacturing the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20060251137A1
公开(公告)日：2006-11-09
申请号：US11340590
申请日：2006-01-27
申请人： Youn-joon Sung , Tae-hoon Jang
发明人： Youn-joon Sung , Tae-hoon Jang
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.
摘要翻译：在半导体激光二极管中，第一材料层，有源层和第二材料层依次形成在基板上，脊部和第一突出部分在垂直于有源层的方向上形成在第二材料层上所述第一突起部分形成在所述脊部的一侧，形成与所述脊部的顶面接触的第二电极层，在所述第二材料层的整个表面上形成限流层，第二电极层，在第一突起部分上方的电流限制层的表面上形成保护层，并且具有不同于电流限制层的蚀刻选择性，并且在电流限制层上形成接合金属层，与第二电极层电连接的保护层。

6. 发明授权

US08367443B2 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08367443B2
公开(公告)日：2013-02-05
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

7. 发明申请

US20080102549A1 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20080102549A1
公开(公告)日：2008-05-01
申请号：US11889126
申请日：2007-08-09
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

8. 发明授权

US08017421B2 Method of manufacturing semiconductor light emitting device 失效
公开(公告)号：US08017421B2
公开(公告)日：2011-09-13
申请号：US11889126
申请日：2007-08-09
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

9. 发明授权

US07406111B2 Semiconductor laser diode and method for manufacturing the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US07406111B2
公开(公告)日：2008-07-29
申请号：US11340590
申请日：2006-01-27
申请人： Youn-joon Sung , Tae-hoon Jang
发明人： Youn-joon Sung , Tae-hoon Jang
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.
摘要翻译：在半导体激光二极管中，第一材料层，有源层和第二材料层依次形成在基板上，脊部和第一突出部分在垂直于有源层的方向上形成在第二材料层上所述第一突起部分形成在所述脊部的一侧，形成与所述脊部的顶面接触的第二电极层，在所述第二材料层的整个表面上形成限流层，第二电极层，在第一突起部分上方的电流限制层的表面上形成保护层，并且具有不同于电流限制层的蚀刻选择性，并且在电流限制层上形成接合金属层，与第二电极层电连接的保护层。

10. 发明申请

US20110300654A1 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20110300654A1
公开(公告)日：2011-12-08
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L33/36
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

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