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    • 8. 发明授权
    • Composite resin material and method of forming the same
    • 复合树脂材料及其形成方法
    • US6015856A
    • 2000-01-18
    • US746347
    • 1996-11-08
    • Mitsumasa MatsushitaTakumi TaniguchiTakashi OhtaNorio SatoYuji HoshinoKanemitsu KondoNaruaki AbeToshiyuki Suzuki
    • Mitsumasa MatsushitaTakumi TaniguchiTakashi OhtaNorio SatoYuji HoshinoKanemitsu KondoNaruaki AbeToshiyuki Suzuki
    • C08J11/10C08G81/00C08L21/00C08L23/00C08L75/00C08L75/04C08L77/00C08L87/00C08L101/00C08J3/24C08K3/34
    • C08L77/00C08L75/04
    • A composite resin material exhibiting excellent physical properties, which is formed by adding semi-rigid or rigid polyurethane resin waste to a thermoplastic reactive resin, a nonreactive resin, a polymer alloy or the like. A first kind of the composite resin material is composed of a crosslinking polyurethane resin and a reactive resin, a nonreactive resin or a polymer alloy, which is formed by kneading the crosslinking polyurethane resin and the reactive resin, the nonreactive resin or the polymer alloy at a predetermined temperature or more. A second kind of the composite resin material is composed of a hydrolysis product of crosslinking polyurethane resin and a solid filler, which are mixed with a nonreactive resin and a polymer alloy by kneading. A third kind of the composite resin material is formed by kneading a moisture-absorbing crosslinking polyurethane resin, a reactive resin and one of a reactive resin, a nonreactive resin and a polymer alloy composed of a resilient rubber material and a thermoplastic resin at a temperature of not less than the hydrolysis temperature of the crosslinking polyurethane resin and not less than the melting point of the one of the nonreactive resin and the polymer alloy.
    • 通过将半刚性或刚性聚氨酯树脂废料添加到热塑性反应性树脂,非反应性树脂,聚合物合金等中而形成的具有优异物理性质的复合树脂材料。 第一种复合树脂材料由交联聚氨酯树脂和反应性树脂,非反应性树脂或聚合物合金组成,其通过将交联聚氨酯树脂和反应性树脂,非反应性树脂或聚合物合金捏合在 预定温度以上。 第二种复合树脂材料由交联聚氨酯树脂的水解产物和固体填料组成,它们通过捏合与非反应性树脂和聚合物合金混合。 第三种复合树脂材料是通过将吸湿性交联聚氨酯树脂,反应性树脂和反应性树脂,非反应性树脂和由弹性橡胶材料和热塑性树脂组成的聚合物合金中的一种在温度 不低于交联聚氨酯树脂的水解温度,不小于非反应性树脂和聚合物合金之一的熔点。
    • 9. 发明申请
    • CHARGED PARTICLE MICROSCOPE AND MEASUREMENT IMAGE CORRECTION METHOD THEREOF
    • 充电颗粒显微镜及其测量图像校正方法
    • US20130300854A1
    • 2013-11-14
    • US13981326
    • 2011-11-02
    • Shuangqi DongNorio SatoSusumu Koyama
    • Shuangqi DongNorio SatoSusumu Koyama
    • H04N5/217
    • H04N5/217H01J37/222H01J37/26H01J2237/153
    • A charged particle microscope corrects distortion in an image caused by effects of drift in the sampling stage by measuring the correction reference image in a shorter time than the observation image, making corrections by comparing the shape of the observation image with the shape of the correction reference image, and reducing distortion in the observation images. The reference image for distortion correction is measured at the same position and magnification as when acquiring images for observation. In order to reduce effects from drift, the reference image is at this time measured within a shorter time than the essential observation image. The shape of the observation image is corrected by comparing the shapes of the reference image and observation image, and correcting the shape of the observation image to match the reference image.
    • 带电粒子显微镜通过在比观察图像更短的时间内测量校正参考图像来校正由采样阶段的漂移效应引起的图像中的失真,通过将观察图像的形状与校正基准的形状进行比较来进行校正 图像,减少观察图像的失真。 与获取观察图像时相同的位置和倍率测量用于失真校正的参考图像。 为了减少漂移的影响,此时在比基本观察图像更短的时间内测量参考图像。 通过比较参考图像和观察图像的形状以及校正观察图像的形状以匹配参考图像来校正观察图像的形状。
    • 10. 发明申请
    • SEMICONDUCTOR WAFER TESTING APPARATUS
    • 半导体测试仪器
    • US20110279143A1
    • 2011-11-17
    • US13133970
    • 2009-09-18
    • Tadanobu TobaKatsunori HiranoNorio SatoMasahiro Ohashi
    • Tadanobu TobaKatsunori HiranoNorio SatoMasahiro Ohashi
    • G01R31/26
    • G01B15/00G01R31/307H01L22/12
    • Disclosed is a semiconductor wafer testing apparatus that resolves the following problems which arise when semiconductor wafers become larger: (1) complexity of stage acceleration/deceleration control; (2) throughput reduction; and (3) increased vibration of the stage support platform during the stage inversion operation (deterioration in resolution). In the semiconductor wafer testing apparatus for resolving these problems, a wafer is rotated, an electro beam is irradiated onto the rotating wafer from a scanning electron microscope, and secondary electrons emitted from the wafer are detected. The detected secondary electrons are A/D converted by an image processing unit, realigned by an image data realignment unit, and then image-processed for display. As a result, image information of all dies of a wafer can be acquired without a large amount of movement of the stage in the X and the Y directions.
    • 公开了一种半导体晶片测试装置,其解决了当半导体晶片变大时出现的以下问题:(1)阶段加速/减速控制的复杂性; (2)吞吐量减少; 和(3)在舞台反转操作期间舞台支撑平台的振动增加(分辨率降低)。 在用于解决这些问题的半导体晶片测试装置中,旋转晶片,电子束从扫描电子显微镜照射到旋转晶片上,并且检测从晶片发射的二次电子。 所检测的二次电子被图像处理单元进行A / D转换,由图像数据重新对准单元重新对准,然后进行图像处理以进行显示。 结果,可以获得晶片的所有管芯的图像信息,而不需要在X和Y方向上的台的大量移动。