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1. 发明授权

US09393110B2 Prosthetic heart valve 有权
标题翻译：假心脏瓣膜
公开(公告)号：US09393110B2
公开(公告)日：2016-07-19
申请号：US13253689
申请日：2011-10-05
申请人： Tamir S. Levi , Son V. Nguyen , Netanel Benichou , David Maimon , Ziv Yohanan , Nikolay Gurovich , Bella Felsen , Larisa Dadonkina , Ron Sharoni , Elena Sherman
发明人： Tamir S. Levi , Son V. Nguyen , Netanel Benichou , David Maimon , Ziv Yohanan , Nikolay Gurovich , Bella Felsen , Larisa Dadonkina , Ron Sharoni , Elena Sherman
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2/2412 , A61F2/2433 , A61F2220/0075 , A61F2230/0054 , A61F2250/0036 , A61F2250/0097
摘要： Embodiments of a radially collapsible and expandable prosthetic heart valve are disclosed. A valve frame can have a tapered profile when mounted on a delivery shaft, with an inflow end portion having a smaller diameter than an outflow end portion. The valve can comprise generally V-shaped leaflets, reducing material within the inflow end of the frame. An outer skirt can be secured to the outside of the inflow end portion of the frame, the outer skirt having longitudinal slack when the valve is expanded and lying flat against the frame when the valve is collapsed. A diagonally woven inner skirt can elongate axially with the frame. Side tabs of adjacent leaflets can extend through and be secured to window frame portions of the frame to form commissures. The window frame portions can be depressed radially inward relative to surrounding frame portions when the valve is crimped onto a delivery shaft.
摘要翻译：公开了径向可折叠和可扩张的假体心脏瓣膜的实施例。当安装在输送轴上时，阀架可以具有锥形轮廓，流入端部的直径小于流出端部分的直径。阀可以包括大致V形的小叶，在框架的流入端内还原材料。外裙可以固定到框架的流入端部分的外部，当阀门膨胀时，外裙部具有纵向松弛，并且当阀门折叠时，外裙部平放在框架上。对角编织的内裙可以与框架轴向伸长。相邻小叶的侧翼可以延伸穿过并固定到框架的窗框部分以形成连合。当阀被压接到输送轴上时，窗框部分可以相对于周围的框架部分径向向内按压。

2. 发明申请

US20120123529A1 PROSTHETIC HEART VALVE 有权
标题翻译：前置心脏瓣膜
公开(公告)号：US20120123529A1
公开(公告)日：2012-05-17
申请号：US13253689
申请日：2011-10-05
申请人： Tamir Levi , Son V. Nguyen , Netanel Benichou , David Maimon , Ziv Yohanan , Nikolay Gurovich , Bella Felsen , Larisa Dadonkina
发明人： Tamir Levi , Son V. Nguyen , Netanel Benichou , David Maimon , Ziv Yohanan , Nikolay Gurovich , Bella Felsen , Larisa Dadonkina
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2/2412 , A61F2/2433 , A61F2220/0075 , A61F2230/0054 , A61F2250/0036 , A61F2250/0097
摘要： Embodiments of a radially collapsible and expandable prosthetic heart valve are disclosed. A valve frame can have a tapered profile when mounted on a delivery shaft, with an inflow end portion having a smaller diameter than an outflow end portion. The valve can comprise generally V-shaped leaflets, reducing material within the inflow end of the frame. An outer skirt can be secured to the outside of the inflow end portion of the frame, the outer skirt having longitudinal slack when the valve is expanded and lying flat against the frame when the valve is collapsed. A diagonally woven inner skirt can elongate axially with the frame. Side tabs of adjacent leaflets can extend through and be secured to window frame portions of the frame to form commissures. The window frame portions can be depressed radially inward relative to surrounding frame portions when the valve is crimped onto a delivery shaft.
摘要翻译：公开了径向可折叠和可扩张的假体心脏瓣膜的实施例。当安装在输送轴上时，阀架可以具有锥形轮廓，流入端部的直径小于流出端部分的直径。阀可以包括大致V形的小叶，在框架的流入端内还原材料。外裙可以固定到框架的流入端部分的外部，当阀门膨胀时，外裙部具有纵向松弛，并且当阀门折叠时，外裙部平放在框架上。对角编织的内裙可以与框架轴向伸长。相邻小叶的侧翼可以延伸穿过并固定到框架的窗框部分以形成连合。当阀被压接到输送轴上时，窗框部分可以相对于周围的框架部分径向向内按压。

3. 发明申请

US20100036484A1 LOW PROFILE TRANSCATHETER HEART VALVE 有权
标题翻译：低剖面转盘心阀
公开(公告)号：US20100036484A1
公开(公告)日：2010-02-11
申请号：US12480603
申请日：2009-06-08
申请人： Ilia Hariton , Netanel Benichou , Yaacov Nitzan , Bella Felsen , Diana Nguyen-Thien-Nhoh , Rajesh Khanna , Son V. Nguyen , Tamir Levi , Itai Pelled
发明人： Ilia Hariton , Netanel Benichou , Yaacov Nitzan , Bella Felsen , Diana Nguyen-Thien-Nhoh , Rajesh Khanna , Son V. Nguyen , Tamir Levi , Itai Pelled
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2/2412 , A61F2/2433 , A61F2/2475 , A61F2/95 , A61F2002/9522 , A61F2220/0033 , A61F2220/005 , A61F2220/0075 , A61F2230/0054 , Y10T29/49863
摘要： An implantable prosthetic valve, according to one embodiment, comprises a frame, a leaflet structure, and a skirt member. The frame can have a plurality of axial struts interconnected by a plurality of circumferential struts. The leaflet structure comprises a plurality of leaflets (e.g., three leaflets arrange to form a tricuspid valve). The leaflet structure has a scalloped lower edge portion secured to the frame. The skirt member can be disposed between the leaflet structure and the frame.
摘要翻译：根据一个实施例的可植入人造瓣膜包括框架，小叶结构和裙部构件。框架可以具有由多个圆周支柱互连的多个轴向支柱。小叶结构包括多个传单（例如，安排形成三尖瓣的三个小叶）。小叶结构具有固定到框架的扇形下边缘部分。裙部构件可以设置在小叶结构和框架之间。

4. 发明申请

US20120089223A1 BAR-LESS COMMISSURE ATTACHMENT FOR PROSTHETIC VALVE 有权
标题翻译： BAR-LESS COMMISSURE附件为前置阀
公开(公告)号：US20120089223A1
公开(公告)日：2012-04-12
申请号：US13253698
申请日：2011-10-05
申请人： Son V. Nguyen , Netanel Benichou
发明人： Son V. Nguyen , Netanel Benichou
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2220/0075 , A61F2220/0091 , A61F2230/0054
摘要： An implantable prosthetic valve, according to one embodiment, comprises a radially collapsible and expandable frame and a leaflet structure supported within the frame. The leaflet structure can comprise a plurality of leaflets paired together at commissures. In one embodiment, the commissures can comprise leaflet tabs rolled into spirals around non-rigid reinforcing inserts. In another embodiment, the commissures can comprise a reinforcing sheet folded around leaflet tabs.
摘要翻译：根据一个实施例的可植入假体瓣膜包括径向可折叠和可扩张的框架以及支撑在框架内的小叶结构。小叶结构可以包括在连合处配对在一起的多个传单。在一个实施例中，连合件可以包括在非刚性加强插入件周围卷成螺旋形的小叶片。在另一个实施例中，连合件可以包括折叠在叶瓣上的加强片。

5. 发明申请

US20090281609A1 TWO-STEP HEART VALVE IMPLANTATION 有权
标题翻译：两步心瓣植入
公开(公告)号：US20090281609A1
公开(公告)日：2009-11-12
申请号：US12392995
申请日：2009-02-25
申请人： Netanel Benichou , Son V. Nguyen , Benjamin Spenser
发明人： Netanel Benichou , Son V. Nguyen , Benjamin Spenser
IPC分类号： A61F2/06 , A61M29/00
CPC分类号： A61F2/2418 , A61F2/2427 , A61F2/2433 , A61F2220/0008 , A61F2220/0016 , A61F2230/0054 , A61F2250/0059 , A61F2250/0063
摘要： A two-part implantable heart valve and procedure are disclosed that allow expansion and positioning of a first part of the implantable heart valve having a temporary or transient valvular structure. A second part of the implantable heart valve is deployed within the first part and attaches thereto. The valvular structure of the second part then acts to function as the heart valve replacement. A tool or system is provided for determining an adequate percutaneous heart valve size for a given stenotic valve. A balloon can be inflated inside the stenotic valve to a desired pressure. When this pressure is reached an angiographic image is taken and the balloon diameter is measured at a waist area created by contact between the balloon and the stenotic valve. The diameter represents the minimum percutaneous heart valve diameter to be implanted.
摘要翻译：公开了两部分可植入心脏瓣膜和程序，其允许具有临时或暂时瓣膜结构的可植入心脏瓣膜的第一部分的膨胀和定位。可植入心脏瓣膜的第二部分部署在第一部分内并且附接到其上。然后，第二部分的瓣膜结构起到充当心脏瓣膜置换作用。提供了一种用于确定给定狭窄瓣膜的足够的经皮心脏瓣膜尺寸的工具或系统。气囊可以在狭窄的瓣膜内充气到期望的压力。当达到该压力时，取出血管造影图像，并且在通过球囊和狭窄瓣膜之间的接触产生的腰部区域测量球囊直径。直径代表要植入的最小经皮心脏瓣膜直径。

6. 发明授权

US09241792B2 Two-step heart valve implantation 有权
标题翻译：两步心脏瓣膜植入
公开(公告)号：US09241792B2
公开(公告)日：2016-01-26
申请号：US12392995
申请日：2009-02-25
申请人： Netanel Benichou , Son V. Nguyen , Benjamin Spenser
发明人： Netanel Benichou , Son V. Nguyen , Benjamin Spenser
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2/2427 , A61F2/2433 , A61F2220/0008 , A61F2220/0016 , A61F2230/0054 , A61F2250/0059 , A61F2250/0063
摘要： A two-part implantable heart valve and procedure are disclosed that allow expansion and positioning of a first part of the implantable heart valve having a temporary or transient valvular structure. A second part of the implantable heart valve is deployed within the first part and attaches thereto. The valvular structure of the second part then acts to function as the heart valve replacement. A tool or system is provided for determining an adequate percutaneous heart valve size for a given stenotic valve. A balloon can be inflated inside the stenotic valve to a desired pressure. When this pressure is reached an angiographic image is taken and the balloon diameter is measured at a waist area created by contact between the balloon and the stenotic valve. The diameter represents the minimum percutaneous heart valve diameter to be implanted.
摘要翻译：公开了两部分可植入心脏瓣膜和程序，其允许具有临时或暂时瓣膜结构的可植入心脏瓣膜的第一部分的膨胀和定位。可植入心脏瓣膜的第二部分部署在第一部分内并且附接到其上。然后，第二部分的瓣膜结构起到充当心脏瓣膜置换作用。提供了一种用于确定给定狭窄瓣膜的足够的经皮心脏瓣膜尺寸的工具或系统。气囊可以在狭窄的瓣膜内充气到期望的压力。当达到该压力时，取出血管造影图像，并且在通过球囊和狭窄瓣膜之间的接触产生的腰部区域测量球囊直径。直径代表要植入的最小经皮心脏瓣膜直径。

7. 发明授权

US08568475B2 Spiraled commissure attachment for prosthetic valve 有权
标题翻译：人工瓣膜的螺旋连接附件
公开(公告)号：US08568475B2
公开(公告)日：2013-10-29
申请号：US13253698
申请日：2011-10-05
申请人： Son V. Nguyen , Netanel Benichou
发明人： Son V. Nguyen , Netanel Benichou
IPC分类号： A61F2/24
CPC分类号： A61F2/2418 , A61F2220/0075 , A61F2220/0091 , A61F2230/0054
摘要： An implantable prosthetic valve, according to one embodiment, comprises a radially collapsible and expandable frame and a leaflet structure supported within the frame. The leaflet structure can comprise a plurality of leaflets paired together at commissures. In one embodiment, the commissures can comprise leaflet tabs rolled into spirals around non-rigid reinforcing inserts. In another embodiment, the commissures can comprise a reinforcing sheet folded around leaflet tabs.
摘要翻译：根据一个实施例的可植入假体瓣膜包括径向可折叠和可扩张的框架以及支撑在框架内的小叶结构。小叶结构可以包括在连合处配对在一起的多个传单。在一个实施例中，连合件可以包括在非刚性加强插入件周围卷成螺旋形的小叶片。在另一个实施例中，连合件可以包括折叠在叶瓣上的加强片。

8. 发明申请

US20130333923A1 MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATION 审中-公开
标题翻译：在纳米器件制造中使用的调制组合和应力控制的多层超大规模SiNx电介质
公开(公告)号：US20130333923A1
公开(公告)日：2013-12-19
申请号：US13495545
申请日：2012-06-13
申请人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
发明人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
IPC分类号： C23C16/34 , H05K1/02
CPC分类号： C23C16/345 , C23C16/56 , H01L21/4803 , H05K1/0298 , Y10T428/24975
摘要： A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.
摘要翻译：将厚度为0.5纳米至2.4纳米的氮化硅层沉积在基底上。在层上进行等离子体氮化处理。对于多个附加氮化硅层重复这些步骤，直到达到预定厚度。可以使用这样的步骤来提供形成在具有介电材料的上表面的衬底上的多层氮化硅电介质，其中Cu和其它导体嵌入其中并且多个步骤。多层氮化硅电介质具有各自具有0.5纳米至2.4纳米厚度的多个单独层，多层氮化硅电介质保形地覆盖具有至少百分之七十的保形度的基底的步骤。还提供了多层氮化硅电介质，以及使用该多层氮化硅电介质的多层后端的布线结构。

9. 发明申请

US20130043514A1 MULTIPHASE ULTRA LOW K DIELECTRIC MATERIAL 有权
标题翻译：多相超低K电介质材料
公开(公告)号：US20130043514A1
公开(公告)日：2013-02-21
申请号：US13214157
申请日：2011-08-19
申请人： Alfred Grill , Thomas J. Haigh, JR. , Kelly Malone , Son V. Nguyen , Vishnubhai V. Patel , Hosadurga Shobha
发明人： Alfred Grill , Thomas J. Haigh, JR. , Kelly Malone , Son V. Nguyen , Vishnubhai V. Patel , Hosadurga Shobha
IPC分类号： H01L29/78 , H01L23/48 , C08J9/26 , H01L21/31
CPC分类号： H01L29/511 , C08J9/26 , C08J2201/042 , C08J2383/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/76801 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L29/515 , H01L2924/0002 , H01L2924/00
摘要： A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.
摘要翻译：包含有机硅前驱体的多相超低k电介质工艺，其包括有机致孔剂，在PECVD腔室中等离子体起始之前的高频射频功率和能量后处理。具有k小于2.7且弹性模量大于7GPa的多孔SiCOH电介质材料。 SiO2和多孔SiCOH的分级碳粘附层。

10. 发明授权

US08362596B2 Engineered interconnect dielectric caps having compressive stress and interconnect structures containing same 有权
标题翻译：具有压缩应力的工程互连电介质盖和包含它们的互连结构
公开(公告)号：US08362596B2
公开(公告)日：2013-01-29
申请号：US12502690
申请日：2009-07-14
申请人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
发明人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
IPC分类号： H01L23/58 , H01L21/302
CPC分类号： H01L23/5329 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.
摘要翻译：提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。此外，介电覆盖层在沉积后处理时保持一致的压应力。电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

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