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1. 发明申请

US20130043514A1 MULTIPHASE ULTRA LOW K DIELECTRIC MATERIAL 有权
标题翻译：多相超低K电介质材料
公开(公告)号：US20130043514A1
公开(公告)日：2013-02-21
申请号：US13214157
申请日：2011-08-19
申请人： Alfred Grill , Thomas J. Haigh, JR. , Kelly Malone , Son V. Nguyen , Vishnubhai V. Patel , Hosadurga Shobha
发明人： Alfred Grill , Thomas J. Haigh, JR. , Kelly Malone , Son V. Nguyen , Vishnubhai V. Patel , Hosadurga Shobha
IPC分类号： H01L29/78 , H01L23/48 , C08J9/26 , H01L21/31
CPC分类号： H01L29/511 , C08J9/26 , C08J2201/042 , C08J2383/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/76801 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L23/5329 , H01L29/515 , H01L2924/0002 , H01L2924/00
摘要： A multiphase ultra low k dielectric process incorporating an organo-silicon precursor including an organic porogen, high frequency radio frequency power just above plasma initiation in a PECVD chamber and energy post treatment. A porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa. A graded carbon adhesion layer of SiO2 and porous SiCOH.
摘要翻译：包含有机硅前驱体的多相超低k电介质工艺，其包括有机致孔剂，在PECVD腔室中等离子体起始之前的高频射频功率和能量后处理。具有k小于2.7且弹性模量大于7GPa的多孔SiCOH电介质材料。 SiO2和多孔SiCOH的分级碳粘附层。

2. 发明申请

US20130333923A1 MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATION 审中-公开
标题翻译：在纳米器件制造中使用的调制组合和应力控制的多层超大规模SiNx电介质
公开(公告)号：US20130333923A1
公开(公告)日：2013-12-19
申请号：US13495545
申请日：2012-06-13
申请人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
发明人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Mei-Yee Shek , Hosadurga Shobha , Li-Qun Xia
IPC分类号： C23C16/34 , H05K1/02
CPC分类号： C23C16/345 , C23C16/56 , H01L21/4803 , H05K1/0298 , Y10T428/24975
摘要： A layer of silicon nitride having a thickness from 0.5 nanometers to 2.4 nanometers is deposited on a substrate. A plasma nitridation process is carried out on the layer. These steps are repeated for a plurality of additional layers of silicon nitride, until a predetermined thickness is attained. Such steps can be used to provide a multilayer silicon nitride dielectric formed on a substrate having an upper surface of dielectric material with Cu and other conductors embedded within, and a plurality of steps. The multilayer silicon nitride dielectric has a plurality of individual layers each having a thickness from 0.5 nanometers to 2.4 nanometers, and the multilayer silicon nitride dielectric conformally covers the steps of the substrate with a conformality of at least seventy percent. A multilayer silicon nitride dielectric, and a multilevel back end of line interconnect wiring structure using same, are also provided.
摘要翻译：将厚度为0.5纳米至2.4纳米的氮化硅层沉积在基底上。在层上进行等离子体氮化处理。对于多个附加氮化硅层重复这些步骤，直到达到预定厚度。可以使用这样的步骤来提供形成在具有介电材料的上表面的衬底上的多层氮化硅电介质，其中Cu和其它导体嵌入其中并且多个步骤。多层氮化硅电介质具有各自具有0.5纳米至2.4纳米厚度的多个单独层，多层氮化硅电介质保形地覆盖具有至少百分之七十的保形度的基底的步骤。还提供了多层氮化硅电介质，以及使用该多层氮化硅电介质的多层后端的布线结构。

3. 发明授权

US08362596B2 Engineered interconnect dielectric caps having compressive stress and interconnect structures containing same 有权
标题翻译：具有压缩应力的工程互连电介质盖和包含它们的互连结构
公开(公告)号：US08362596B2
公开(公告)日：2013-01-29
申请号：US12502690
申请日：2009-07-14
申请人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
发明人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
IPC分类号： H01L23/58 , H01L21/302
CPC分类号： H01L23/5329 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.
摘要翻译：提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。此外，介电覆盖层在沉积后处理时保持一致的压应力。电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

4. 发明申请

US20110012238A1 ENGINEERED INTERCONNECT DIELECTRIC CAPS HAVING COMPRESSIVE STRESS AND INTERCONNECT STRUCTURES CONTAINING SAME 有权
标题翻译：具有压缩应力和相互连接结构的工程互连电介质
公开(公告)号：US20110012238A1
公开(公告)日：2011-01-20
申请号：US12502690
申请日：2009-07-14
申请人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
发明人： Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Xiao H. Liu , Son V. Nguyen , Thomas M. Shaw , Hosadurga Shobha
IPC分类号： H01L29/06 , H01L23/532 , H01L21/314
CPC分类号： H01L23/5329 , H01L21/76825 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A dielectric capping layer having a dielectric constant of less than 4.2 is provided that exhibits a higher mechanical and electrical stability to UV and/or E-Beam radiation as compared to conventional dielectric capping layers. Also, the dielectric capping layer maintains a consistent compressive stress upon post-deposition treatments. The dielectric capping layer includes a tri-layered dielectric material in which at least one of the layers has good oxidation resistance, is resistance to conductive metal diffusion, and exhibits high mechanical stability under at least UV curing. The low k dielectric capping layer also includes nitrogen content layers that contain electron donors and double bond electrons. The low k dielectric capping layer also exhibits a high compressive stress and high modulus and is stable under post-deposition curing treatments, which leads to less film and device cracking and improved device reliability.
摘要翻译：提供具有小于4.2的介电常数的介电覆盖层，与传统的介电覆盖层相比，其对UV和/或E-Beam辐射具有更高的机械和电学稳定性。此外，介电覆盖层在沉积后处理时保持一致的压应力。电介质覆盖层包括三层介电材料，其中至少一层具有良好的抗氧化性，耐导电性金属扩散，并且在至少UV固化下表现出高机械稳定性。低k电介质封盖层还包括含有电子给体和双键电子的氮含量层。低k电介质覆盖层还具有高压缩应力和高模量，并且在后沉积固化处理中是稳定的，这导致较少的膜和器件开裂和改进的器件可靠性。

5. 发明授权

US09502288B2 Method of forming an interconnect structure 有权
标题翻译：形成互连结构的方法
公开(公告)号：US09502288B2
公开(公告)日：2016-11-22
申请号：US13420728
申请日：2012-03-15
申请人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Hosadurga Shobha , Tuan A. Vo
发明人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Hosadurga Shobha , Tuan A. Vo
IPC分类号： H05K3/02 , H05K3/10 , H01L21/768
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
摘要翻译：提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。

6. 发明申请

US20120175023A1 SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权
标题翻译：用于Cu互连结构的自对准复合材料M-MOx /电介质盖
公开(公告)号：US20120175023A1
公开(公告)日：2012-07-12
申请号：US13420728
申请日：2012-03-15
申请人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
发明人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
IPC分类号： C23C8/00 , C23C28/04
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
摘要翻译：提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。

7. 发明申请

US20110162874A1 SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权
标题翻译：用于Cu互连结构的自对准复合材料M-MOx /电介质盖
公开(公告)号：US20110162874A1
公开(公告)日：2011-07-07
申请号：US12683590
申请日：2010-01-07
申请人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
发明人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, JR. , Hosadurga Shobha , Tuan A. Vo
IPC分类号： H05K1/09 , B05D5/12 , B05D3/06 , B05D3/04
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
摘要翻译：提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。互连结构包括具有约4.0或更小的介电常数的互连电介质材料。互连电介质材料在其中具有填充有含Cu材料的至少一个开口。至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。

8. 发明授权

US08299365B2 Self-aligned composite M-MOx/dielectric cap for Cu interconnect structures 有权
标题翻译：用于Cu互连结构的自对准复合M-MOx /电介质盖
公开(公告)号：US08299365B2
公开(公告)日：2012-10-30
申请号：US12683590
申请日：2010-01-07
申请人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Hosadurga Shobha , Tuan A. Vo
发明人： Son Van Nguyen , Alfred Grill , Thomas J. Haigh, Jr. , Hosadurga Shobha , Tuan A. Vo
IPC分类号： H05K1/09
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes an interconnect dielectric material having a dielectric constant of about 4.0 or less. The interconnect dielectric material has at least one opening therein that is filled with a Cu-containing material. The Cu-containing material within the at least one opening has an exposed upper surface that is co-planar with an upper surface of the interconnect dielectric material. The interconnect structure further includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal. The interconnect structure further includes a dielectric cap located on at least an upper surface of the composite M-MOx cap.
摘要翻译：提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。互连结构包括具有约4.0或更小的介电常数的互连电介质材料。互连电介质材料在其中具有填充有含Cu材料的至少一个开口。至少一个开口内的含Cu材料具有与互连电介质材料的上表面共面的暴露的上表面。互连结构还包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。互连结构还包括位于复合M-MOx帽的至少上表面上的介电帽。

9. 发明授权

US08536069B2 Multilayered low k cap with conformal gap fill and UV stable compressive stress properties 有权
公开(公告)号：US08536069B2
公开(公告)日：2013-09-17
申请号：US13612159
申请日：2012-09-12
申请人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Son V. Nguyen , Li-Qun Xia
发明人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Son V. Nguyen , Li-Qun Xia
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： B82Y40/00 , B82Y30/00 , H01L21/02112 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

10. 发明申请

US20120248617A1 MULTILAYERED LOW k CAP WITH CONFORMAL GAP FILL AND UV STABLE COMPRESSIVE STRESS PROPERTIES 有权
标题翻译：具有合格孔隙填料和紫外线稳定压应变性能的多层低k
公开(公告)号：US20120248617A1
公开(公告)日：2012-10-04
申请号：US13078305
申请日：2011-04-01
申请人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Li-Qun Xia
发明人： Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, JR. , Son V. Nguyen , Li-Qun Xia
IPC分类号： H01L23/48 , B82Y99/00
CPC分类号： B82Y40/00 , B82Y30/00 , H01L21/02112 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.
摘要翻译：本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。

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