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1. 发明授权

US06913115B2 Fluid pressure-operated apparatus-connecting device 有权
标题翻译：流体压力操作装置连接装置
公开(公告)号：US06913115B2
公开(公告)日：2005-07-05
申请号：US10190076
申请日：2002-07-06
申请人： Taku Tomita , Takehiko Kanazawa , Mitsutoshi Araki , Toshiharu Wada , Makoto Wada
发明人： Taku Tomita , Takehiko Kanazawa , Mitsutoshi Araki , Toshiharu Wada , Makoto Wada
IPC分类号： F16B7/04 , F16N7/30 , F16N7/34 , F16N39/06 , F16L3/00 , F16L41/06
CPC分类号： F16N39/06 , F16N7/30
摘要： A fluid pressure-operated apparatus-connecting device comprises a body to which an O-ring is installed, a bracket which is connected to the body, a fastening member which is connected to the body, a plate spring which is interposed between the body and the fastening member, a pin member which is engaged with a second engaging groove to fasten the fastening member thereby, and a bolt which integrally fixes the body, the bracket, and the fastening member.
摘要翻译：流体压力操作的装置连接装置包括安装有O形环的主体，连接到主体的支架，连接到主体的紧固构件，插入在主体和主体之间的板簧紧固构件，与第二接合槽接合以紧固紧固构件的销构件，以及一体地固定主体，支架和紧固构件的螺栓。

2. 发明授权

US08648464B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08648464B2
公开(公告)日：2014-02-11
申请号：US13413854
申请日：2012-03-07
申请人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
发明人： Masayuki Kitamura , Makoto Wada , Yuichi Yamazaki , Masayuki Katagiri , Atsuko Sakata , Akihiro Kajita , Tadashi Sakai , Naoshi Sakuma , Ichiro Mizushima
IPC分类号： H01L23/48
CPC分类号： H01L21/02639 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02645 , H01L21/28556 , H01L21/32051 , H01L21/76846 , H01L21/76877 , H01L23/53276 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.
摘要翻译：根据一个实施例，公开了一种半导体器件。该器件包括半导体衬底和半导体衬底上方的互连。互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。助催化剂层包括与催化剂层接触的部分。该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

3. 发明申请

US20120068160A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068160A1
公开(公告)日：2012-03-22
申请号：US13075591
申请日：2011-03-30
申请人： Yuichi YAMAZAKI , Makoto Wada , Tadashi Sakai
发明人： Yuichi YAMAZAKI , Makoto Wada , Tadashi Sakai
IPC分类号： H01L29/12 , H01L21/20 , B82Y99/00
CPC分类号： H01L29/1606 , B82Y10/00 , H01L21/02491 , H01L21/02527 , H01L29/45 , H01L29/66015 , H01L29/76
摘要： A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.
摘要翻译：根据实施例的半导体器件包括催化金属膜，石墨烯膜，接触插塞和调整膜。催化金属膜形成在基板的上方。在催化金属膜上形成石墨烯膜。接触塞连接到石墨烯膜。调整膜形成在与石墨烯膜的表面的接触插塞连接的区域以外的区域中，以相对于费米能级与连接到接触插塞的区域相同的方向调节狄拉克点位置。

4. 发明申请

US20120052680A1 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20120052680A1
公开(公告)日：2012-03-01
申请号：US13041543
申请日：2011-03-07
申请人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
发明人： Naoshi SAKUMA , Tadashi Sakai , Yuichi Yamazaki , Masayuki Katagiri , Mariko Suzuki , Makoto Wada
IPC分类号： H01L21/28
CPC分类号： H01L21/76879 , H01L21/28556 , H01L21/76876 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
摘要翻译：半导体衬底的制造方法包括以下步骤：在衬底上形成第一布线层; 在所述布线层上形成具有通孔的层间绝缘膜; 在通孔中形成碳纳米管; 完全对基材进行氟化处理; 在其中具有碳纳米管的通孔中形成嵌入膜; 并抛光衬底以使衬底完全平坦化。

5. 发明申请

US20120000891A1 ROBOT SYSTEM 审中-公开
标题翻译：机器人系统
公开(公告)号：US20120000891A1
公开(公告)日：2012-01-05
申请号：US13172800
申请日：2011-06-29
申请人： Mitsuaki NAKANISHI , Makoto Wada
发明人： Mitsuaki NAKANISHI , Makoto Wada
IPC分类号： B23K37/02
CPC分类号： B23K11/115
摘要： For teaching a welding-point position for a robot, processing of a robot system includes first processing for moving a spot welding gun to a position at which movable and fixed electrodes pinch the welding point; second processing for extending the movable electrode toward a member to be welded by driving of a motor, detecting contact between the movable electrode and the member based on a torque command to the motor, and stopping the movable electrode after the contact is detected; and third processing for operating the robot toward the movable electrode to move the fixed electrode toward the member while maintaining the contact between the movable electrode and the member by the driving of the motor, detecting contact between the fixed electrode and the member based on a disturbance torque acting on a joint of the robot, and stopping the operation of the robot after the contact is detected.
摘要翻译：为了教导机器人的焊点位置，机器人系统的处理包括将点焊枪移动到可动和固定电极夹住焊接点的位置的第一处理; 第二处理，用于通过电动机的驱动将可动电极朝向待焊接的部件延伸，基于对电动机的转矩指令检测可动电极和部件之间的接触，并且在检测到接触之后停止可动电极; 以及用于将机器人朝向可动电极操作的第三处理，以通过电动机的驱动来保持固定电极朝向构件的同时保持可动电极和构件之间的接触，基于扰动来检测固定电极和构件之间的接触作用在机器人的关节上的扭矩，并且在检测到接触之后停止机器人的操作。

6. 发明授权

US08022461B2 Semiconductor device and method for fabricating semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08022461B2
公开(公告)日：2011-09-20
申请号：US12468504
申请日：2009-05-19
申请人： Makoto Wada , Akihiro Kajita , Kazuyuki Higashi
发明人： Makoto Wada , Akihiro Kajita , Kazuyuki Higashi
IPC分类号： H01L29/76
CPC分类号： H01L23/522 , H01L21/76816 , H01L21/76849 , H01L21/76852 , H01L21/76885 , H01L21/76895 , H01L23/5226 , H01L27/10885 , H01L27/10888 , H01L27/11517 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a plurality of bit lines repeatedly arranged with a same line width and pitch in a memory device region; a plurality of shunt lines arranged in a same layer as that of the plurality of bit lines, in parallel therewith, and with the same line width and pitch as those of the plurality of bit lines in the memory device region; and an upper-layer contact plug arranged from an upper-layer side so as to be connected to the plurality of shunt lines by extending over two or more shunt lines.
摘要翻译：半导体器件包括在存储器件区域中以相同的线宽和间距重复排列的多个位线; 与多个位线的平行布置在与该多个位线相同层的多个分流线，并且与存储器件区域中的多个位线的线宽和间距相同; 以及从上层侧配置的上层接触插塞，以便通过在两条或多条分路线上延伸而连接到多条分路线。

7. 发明申请

US20110057322A1 CARBON NANOTUBE INTERCONNECT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：碳纳米管互连及其制造方法
公开(公告)号：US20110057322A1
公开(公告)日：2011-03-10
申请号：US12876669
申请日：2010-09-07
申请人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
发明人： Noriaki MATSUNAGA , Makoto Wada , Yosuke Akimoto , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L21/76879 , H01L21/76883 , H01L23/53276 , H01L2221/1094 , H01L2224/13
摘要： According to one embodiment, a carbon nanotube interconnect includes a first interconnection layer, an interlayer dielectric film, a second interconnection layer, a contact hole, a plurality of carbon nanotubes and a film. The interlayer dielectric film is formed on the first interconnection layer. The second interconnection layer is formed on the interlayer dielectric film. The contact hole is formed in the interlayer dielectric film between the first interconnection layer and the second interconnection layer. The carbon nanotubes are formed in the contact hole. The carbon nanotubes have a first end connected to the first interconnection layer and a second end connected to the second interconnection layer. The film is formed between the interlayer dielectric film and the second interconnection layer. The film has a portion filled between the second ends of the carbon nanotubes.
摘要翻译：根据一个实施例，碳纳米管互连包括第一互连层，层间电介质膜，第二互连层，接触孔，多个碳纳米管和膜。层间绝缘膜形成在第一互连层上。第二互连层形成在层间绝缘膜上。接触孔形成在第一互连层和第二互连层之间的层间绝缘膜中。碳纳米管形成在接触孔中。碳纳米管具有连接到第一互连层的第一端和连接到第二互连层的第二端。该膜形成在层间绝缘膜和第二互连层之间。该膜具有填充在碳纳米管的第二端之间的部分。

8. 发明授权

US5574074A Foamable organic polymer composition and production of foamed article 失效
标题翻译：可发泡有机聚合物组合物和泡沫制品的生产
公开(公告)号：US5574074A
公开(公告)日：1996-11-12
申请号：US197884
申请日：1994-02-17
申请人： Toshihiro Zushi , Takashi Higashikubo , Tamotsu Kaide , Takuma Takai , Makoto Wada , Kaneharu Suga
发明人： Toshihiro Zushi , Takashi Higashikubo , Tamotsu Kaide , Takuma Takai , Makoto Wada , Kaneharu Suga
IPC分类号： C08J9/04 , C08J9/12 , H01B3/44 , C08J9/10
CPC分类号： C08J9/122 , C08J9/04 , H01B3/441 , C08J2323/02
摘要： A foamable organic composition comprising a compound foamable to 50% or more comprising an organic polymer and a chemical foaming agent, and, as a physical foaming agent, at least one member selected from the group consisting of rare gases and carbon dioxide; and a method for producing a foamed article having a high expansion ratio by using said composition. According to the present invention, a foamed article having a uniform and fine foam structure and a high expansion ratio of not less than 75% (which is as high as when freon gas is used) can be obtained without causing environmental problems such as depletion of the ozon layer. When applied, in particular, to a foamed layer for an insulated conductor, such as foam-insulated electric wire which is required to have high performance insulation and is occasionally installed under severe conditions, the composition of the present invention advantageously provides an insulated conductor with no potential buckling.
摘要翻译：一种可发泡的有机组合物，其包含可发泡至50％或更多的包含有机聚合物和化学发泡剂的化合物，以及作为物理发泡剂的至少一种选自稀有气体和二氧化碳的组分; 以及通过使用所述组合物制造具有高膨胀率的发泡制品的方法。根据本发明，可以获得具有均匀且细小的泡沫结构和高膨胀率不小于75％（与使用氟利昂气体时相同的高膨胀率）的发泡制品，而不会造成环境问题，如消耗臭氧层。尤其适用于要求具有高性能绝缘性且偶尔在恶劣条件下安装的绝缘导体如泡沫绝缘电线的发泡层时，本发明的组合物有利地提供了一种具有没有潜在的屈曲。

9. 发明授权

US4378997A Hydration-expansive crushing cartridge 失效
标题翻译：水化膨胀破碎筒
公开(公告)号：US4378997A
公开(公告)日：1983-04-05
申请号：US315574
申请日：1981-10-27
申请人： Tsuneo Kasama , Takao Saito , Makoto Wada
发明人： Tsuneo Kasama , Takao Saito , Makoto Wada
IPC分类号： C09K3/00 , B02C19/18 , C04B40/06 , C04B41/00 , E02D5/34 , E04G23/08 , E21C37/06 , E21C37/12 , F42B3/00 , F42D3/00 , C04B7/02
CPC分类号： C04B41/0009 , C04B40/0666 , E04G23/08 , E21C37/06
摘要： A hydration-expansive crushing cartridge which is prepared by filling a hydration-expansive crushing agent into a container made of a material which allows the permeation or penetration of water and which can be broken by an external force. The cartridge can be charged into holes bored in a concrete structure, a rock bed or the like to crack it regardless of the positioning or the direction of the bored holes and which has a homogeneous crushing capability.
摘要翻译：一种水化膨胀破碎筒，其通过将水合膨胀破碎剂填充到由允许水渗透或渗透并且可被外力破坏的材料制成的容器中而制备。无论钻孔的定位或方向如何，均可将墨盒装入混凝土结构，岩床等中钻孔，并具有均匀的破碎能力。

10. 发明授权

US09131611B2 Wire and semiconductor device 有权
标题翻译：线和半导体器件
公开(公告)号：US09131611B2
公开(公告)日：2015-09-08
申请号：US13684297
申请日：2012-11-23
申请人： Yuichi Yamazaki , Makoto Wada , Masayuki Kitamura , Tadashi Sakai
发明人： Yuichi Yamazaki , Makoto Wada , Masayuki Kitamura , Tadashi Sakai
IPC分类号： H01L23/48 , H05K1/09 , H01L23/532 , B82Y10/00 , B82Y99/00 , B82Y30/00
CPC分类号： H01L23/53276 , B82Y10/00 , B82Y30/00 , B82Y99/00 , H01L2924/0002 , H05K1/097 , Y10S977/734 , Y10S977/762 , H01L2924/00
摘要： A wire of an embodiment includes: a substrate; a metal film provided on the substrate; a metal part provided on the metal film; and graphene wires formed on the metal part, wherein the graphene wire is electrically connected to the metal film, and the metal film and the metal part are formed using different metals or alloys from each other.
摘要翻译：实施例的线包括：基板; 设置在基板上的金属膜; 设置在金属膜上的金属部件; 以及形成在所述金属部分上的石墨烯线，其中所述石墨烯线与所述金属膜电连接，并且所述金属膜和所述金属部分使用彼此不同的金属或合金形成。

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