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1. 发明申请

US20120329286A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM 有权
标题翻译：半导体器件制造方法，基板处理方法，基板处理装置和记录介质
公开(公告)号：US20120329286A1
公开(公告)日：2012-12-27
申请号：US13529373
申请日：2012-06-21
申请人： Tsuyoshi TAKEDA , Taketoshi SATO
发明人： Tsuyoshi TAKEDA , Taketoshi SATO
IPC分类号： H01L21/312 , C23C16/52 , C23C16/32
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/325 , C23C16/36 , C23C16/4412 , C23C16/45523 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02529 , H01L21/0262
摘要： A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.
摘要翻译：一种半导体器件制造方法，包括：将基板容纳在处理室中; 以及将硅基气体和胺类气体供给到加热室中，以在衬底上形成包含硅和碳的膜。包括硅和碳的膜的形成包括：将硅基气体和胺类气体供应到处理室中，并将硅基气体和胺类气体限制在处理室中; 保持硅基气体和胺类气体被限制在处理室中并排出处理室内部的状态。

2. 发明申请

US20150187611A1 SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM 审中-公开
标题翻译：基板处理系统，制造半导体器件的方法和非可编程计算机可读记录介质
公开(公告)号：US20150187611A1
公开(公告)日：2015-07-02
申请号：US14228465
申请日：2014-03-28
申请人： Taketoshi SATO
发明人： Taketoshi SATO
IPC分类号： H01L21/67
CPC分类号： H01L21/67017 , C23C16/34 , C23C16/405 , C23C16/4408 , C23C16/452 , C23C16/45523 , C23C16/45561 , C23C16/52 , H01L21/02274 , Y10T137/0318
摘要： A substrate processing system includes a plurality of processing chambers accommodating substrates, a processing gas supply system configured to supply a processing gas sequentially into the plurality of processing chambers, a reactive gas supply system configured to supply an activated reactive gas sequentially into the plurality of processing chambers, a buffer tank installed at the processing gas supply system, and a control unit configured to control the processing gas supply system and the reactive gas supply system such that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank, and the processing gas and the reactive gas are alternately supplied into the plurality of processing chambers.
摘要翻译：一种基板处理系统，包括：多个处理室容纳基板;处理气体供给系统，被配置为将处理气体顺序地供应到所述多个处理室中;反应气体供应系统，被配置为将激活的反应气体顺序地供应到所述多个处理设置在处理气体供给系统中的缓冲罐，以及控制单元，其被配置为控制处理气体供应系统和反应气体供应系统，使得将反应气体供应到多个处理室之一中的时间段是等于将处理气体供应到多个处理室中的一个的时间段的总和和将处理气体供应到缓冲罐中的时间段，并且处理气体和反应气体被交替地供给到多个处理室中的处理室。

3. 发明申请

US20110003482A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：制造半导体器件和衬底加工系统的方法
公开(公告)号：US20110003482A1
公开(公告)日：2011-01-06
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
IPC分类号： H01L21/314 , B05C11/10
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

4. 发明申请

US20080121180A1 Substrate Processing Apparatus and Reaction Container 有权
公开(公告)号：US20080121180A1
公开(公告)日：2008-05-29
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi KONTANI , Kazuyuki TOYODA , Taketoshi SATO , Toru KAGAYA , Nobuhito SHIMA , Nobuo ISHIMARU , Masanori SAKAI , Kazuyuki OKUDA , Yasushi YAGI , Seiji WATANABE , Yasuo KUNII
发明人： Tadashi KONTANI , Kazuyuki TOYODA , Taketoshi SATO , Toru KAGAYA , Nobuhito SHIMA , Nobuo ISHIMARU , Masanori SAKAI , Kazuyuki OKUDA , Yasushi YAGI , Seiji WATANABE , Yasuo KUNII
IPC分类号： C23C16/54
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

5. 发明申请

US20110065283A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20110065283A1
公开(公告)日：2011-03-17
申请号：US12750105
申请日：2010-03-30
申请人： Taketoshi SATO , Masayuki TSUNEDA
发明人： Taketoshi SATO , Masayuki TSUNEDA
IPC分类号： H01L21/30 , B05C9/00
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

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