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    • 2. 发明申请
    • LASER WORKING METHOD
    • 激光工作方法
    • US20110303646A1
    • 2011-12-15
    • US13213175
    • 2011-08-19
    • Takeshi SAKAMOTO
    • Takeshi SAKAMOTO
    • B23K26/00
    • H01L21/78B23K26/40B23K26/53B23K2101/40B23K2103/172B23K2103/50B28D5/0011C03B33/0222
    • An object to be processed is restrained from warping at the time of laser processing. A modified region M2 is formed within a wafer 11, and fractures a2, b2 extending in directions parallel to the thickness direction of the wafer 11 and tilted with respect to a plane including lines 5 are generated from the modified region M2. A modified region M3 is formed within the wafer 11, and a fracture a3 extending in a direction parallel to the thickness direction of the wafer 11 and tilted with respect to the plane including the lines 5 is generated from the modified region M3 so as to connect with the fracture b2. That is, the fractures a2, a3, b2 are generated so as to be connected together. Therefore, at the time of laser processing, the fractures cause both side parts holding the lines to cut 5 therebetween in the wafer 11 to mesh with each other, whereby internal stresses occurring in a direction parallel to the thickness direction of the wafer 11 and perpendicular to the surface including the lines 5 when the modified regions are formed can be reduced.
    • 在激光加工时,抑制被处理物体发生翘曲。 在晶片11内形成有改质区域M2,并且从改质区域M2产生从平行于晶片11的厚度方向延伸的方向相对于包含线5的面倾斜的断裂的a2,b2。 在晶片11内形成改质区域M3,从修正区域M3产生沿与晶片11的厚度方向平行的方向延伸且相对于包含线5的平面倾斜的断面a3, 与骨折b2。 也就是说,产生断裂a2,a3,b2以便连接在一起。 因此,在激光加工时,由于在晶片11中使夹着切断线5的两个部分彼此啮合,因此在与晶片11的厚度方向平行的方向上产生内应力, 可以减少形成修饰区域时包括线5的表面。
    • 3. 发明申请
    • LASER PROCESSING METHOD AND SEMICONDUCTOR CHIP
    • 激光加工方法和半导体芯片
    • US20100178751A1
    • 2010-07-15
    • US12748077
    • 2010-03-26
    • Takeshi SAKAMOTOKenshi Fukumitsu
    • Takeshi SAKAMOTOKenshi Fukumitsu
    • H01L21/268
    • B28D5/0011B23K26/40B23K26/53B23K2101/40B23K2103/172B23K2103/50
    • A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision.This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4, so as to form modified regions 71, 72, 73 within the substrate 4. Here, the quality modified region 71 is formed at a position where the distance between the front face 3 of the substrate 4 and the end part of the quality modified region 71 on the front face side is 5 μm to 15 μm. When the quality modified region 71 is formed at such a position, a laminate part 16 (constituted by interlayer insulating films 17a, 17b here) formed on the front face 3 of the substrate 4 is also cut along a line to cut with a high precision together with the substrate 4.
    • 提供了一种激光加工方法,即使当形成有包括多个功能元件的层叠部件的基板较厚时,也可以高精度地切割基板并层压部件。 该激光加工方法使用背面21作为激光入射面,用激光L照射基板4,并且将聚光点P定位在基板4内,以在其内部形成改质区域71,72,73 这里,质量改质区域71形成在基板4的正面3与正面侧的质量改质区域71的端部之间的距离为5μm〜15μm的位置。 当在这样的位置形成质量改良区域71时,也形成在基板4的正面3上形成的层叠体部16(由这里的层间绝缘膜17a,17b构成),沿着切割线切割高精度 与基板4一起。
    • 4. 发明申请
    • INDICATION PLATE
    • 指示板
    • US20090237939A1
    • 2009-09-24
    • US12405286
    • 2009-03-17
    • Takeshi SAKAMOTO
    • Takeshi SAKAMOTO
    • F21S6/00
    • G09F7/00H05K5/0017
    • Disclosed herein is an indication plate including: a plate member including a light-transmitting material; and an indication part provided at a surface on one side with respect to the thickness direction of the plate member, wherein the indication part includes a light-shielding part including a light-shielding material and covering the surface on one side, and a convex portion including the light-transmitting material, the convex portion projecting from the surface on one side and being exposed from the light-shielding part; the convex portion has a circumferential surface projecting from the light-shielding part, and an end face connecting tip portions of the circumferential surface to each other, and a metallic foil having a light-transmitting property is attached to the end face.
    • 本文公开了一种指示板,包括:板构件,其包括透光材料; 以及指示部,其设置在相对于所述板构件的厚度方向的一侧的表面上,其中所述指示部包括:遮光部,所述遮光部包括遮光材料,并且覆盖所述表面的一侧;以及凸部 包括透光材料,从一侧的表面突出并从遮光部露出的凸部; 所述凸部具有从所述遮光部突出的周面以及将所述周面的前端部彼此连接的端面,并且具有透光性的金属箔附着到所述端面。
    • 6. 发明申请
    • LASER PROCESSING METHOD
    • 激光加工方法
    • US20120067857A1
    • 2012-03-22
    • US13308814
    • 2011-12-01
    • Takeshi SAKAMOTOKenichi MURAMATSU
    • Takeshi SAKAMOTOKenichi MURAMATSU
    • B23K26/38
    • B28D5/0011B23K26/40B23K26/53B23K2101/40B23K2103/50H01L2224/48091H01L2924/00014
    • A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.
    • 提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。 使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同,例如将激光L的球面像差校正为 硅晶片11的正面3为335μm〜525μm。 因此,即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片,在深度为335μm〜525μm的区域中也不会显着出现扭曲 ,由此难以发生颗粒。
    • 10. 发明申请
    • LASER PROCESSING METHOD
    • 激光加工方法
    • US20100227453A1
    • 2010-09-09
    • US12785033
    • 2010-05-21
    • Takeshi SAKAMOTO
    • Takeshi SAKAMOTO
    • H01L21/268
    • H01L21/78B23K26/16B23K26/40B23K26/53B23K2101/40B23K2103/50B28D1/221B28D5/0011
    • A laser processing method which can securely prevent particles from attaching to chips obtained by cutting a planar object is provided. When applying a stress to an object to be processed 1 through an expandable tape 23, forming materials of the object 1 (the object 1 formed with molten processed regions 13, semiconductor chips 25 obtained by cutting the object 1, particles produced from cut sections of the semiconductor chips 25, and the like) are irradiated with soft x-rays. As a consequence, the particles produced from the cut sections of the semiconductor chips 25 obtained by cutting the object 1 fall on the expandable tape 23 without dispersing randomly. This can securely prevent the particles from attaching to the semiconductor chips 25 obtained by cutting the object 1.
    • 提供一种激光加工方法,其可以可靠地防止颗粒附着到通过切割平面物体而获得的切屑。 当通过可膨胀带23向待处理物体1施加应力时,形成物体1(形成有熔融处理区域13的物体1,通过切割物体1获得的半导体芯片25),由切割部分 半导体芯片25等)用软X射线照射。 结果,从通过切割物体1获得的半导体芯片25的切割部分产生的颗粒落在可膨胀带23上而不会随机分散。 这可以可靠地防止颗粒附着到通过切割物体1而获得的半导体芯片25。