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    • 1. 发明申请
    • LASER PROCESSING METHOD
    • 激光加工方法
    • US20120067857A1
    • 2012-03-22
    • US13308814
    • 2011-12-01
    • Takeshi SAKAMOTOKenichi MURAMATSU
    • Takeshi SAKAMOTOKenichi MURAMATSU
    • B23K26/38
    • B28D5/0011B23K26/40B23K26/53B23K2101/40B23K2103/50H01L2224/48091H01L2924/00014
    • A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.
    • 提供了一种用于防止由切割硅晶片获得的切屑切割部分发生颗粒的激光加工方法。 使形成改质区域77〜712的激光L的照射条件与用于形成改质区域713〜719的激光L的照射条件不同,例如将激光L的球面像差校正为 硅晶片11的正面3为335μm〜525μm。 因此,即使将硅晶片11和功能元件层16从作为切割起点的改质区域71〜719切割成半导体芯片,在深度为335μm〜525μm的区域中也不会显着出现扭曲 ,由此难以发生颗粒。
    • 3. 发明申请
    • WAVELENGTH CONVERSION ELEMENT, WAVELENGTH CONVERSION METHOD, PHASE MATCHING METHOD, AND LIGHT SOURCE DEVICE
    • 波长转换元件,波长转换方法,相位匹配方法和光源设备
    • US20120307350A1
    • 2012-12-06
    • US13571696
    • 2012-08-10
    • Kenichi MURAMATSUSunao Kurimura
    • Kenichi MURAMATSUSunao Kurimura
    • G02F1/37
    • G02F1/3775G02F1/3558
    • A wavelength conversion element is provided as one including a monocrystalline nonlinear optical crystal. The nonlinear optical crystal has: a plurality of first regions having a polarity direction along a predetermined direction; a plurality of second regions having a polarity direction opposite to the predetermined direction; an entrance face into which a fundamental incident wave having a wavelength λ and a frequency ω is incident in a direction substantially perpendicular to the predetermined direction; and an exit face from which a second harmonic with a frequency 2ω generated in the crystal emerges. The plurality of first and second regions are formed as alternately arranged in a period substantially equal to d expressed by a predetermined expression, between the entrance face and the exit face.
    • 波长转换元件被提供为包括单晶非线性光学晶体的波长转换元件。 非线性光学晶体具有:沿预定方向具有极性方向的多个第一区域; 具有与所述预定方向相反的极性方向的多个第二区域; 入射面,其中具有波长λ和频率ω的基波入射波入射到基本上垂直于预定方向的方向; 并且出现在晶体中产生具有频率2ω的二次谐波的出射面。 多个第一和第二区域形成为在入射面和出射面之间以基本上等于由预定表达式表示的d的周期交替布置。