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    • 1. 发明申请
    • OPTICAL JOINT
    • 光学接头
    • US20110188804A1
    • 2011-08-04
    • US13119255
    • 2009-10-08
    • Takeshi OkamotoKenji SatoTomoaki KatoKenji Mizutani
    • Takeshi OkamotoKenji SatoTomoaki KatoKenji Mizutani
    • G02B6/28
    • H01S5/026G02B6/125G02B6/2813H01S5/50
    • An optical joint (1) includes a 2×2 MMI coupler (30) and a 2×2 MMI coupler (31) joined to the 2×2 MMI coupler (30). The 2×2 MMI coupler (30) includes a port (32) and a port (33) at one side. The 2×2 MMI coupler (31) includes a port (34) and a port (35) at one side. A light-absorbing region (20) is connected to the port (33), and a light-absorbing region (second light-absorbing section) (21) is connected to the port (34). A reflecting boundary (22) that reflects light propagated through the 2×2 MMI coupler (30) or the 2×2 MMI coupler (31) is formed at the junction portion between the 2×2 MMI coupler (30) and the 2×2 MMI coupler (31).
    • 光接头(1)包括2×2MMI耦合器(30)和2×2MMI耦合器(31),其连接到2×2MMI耦合器(30)。 2×2 MMI联接器(30)在一侧包括端口(32)和端口(33)。 2×2MMI耦合器(31)在一侧包括端口(34)和端口(35)。 吸收区域(20)连接到端口(33),并且光吸收区域(第二光吸收部分)(21)连接到端口(34)。 在2×2 MMI耦合器(30)与2×2 MMI耦合器(30)之间的接合部分处形成反射通过2×2MMI耦合器(30)或2×2MMI耦合器(31)传播的光的反射边界(22) 2 MMI耦合器(31)。
    • 2. 发明授权
    • Optical joint
    • 光学接头
    • US08433164B2
    • 2013-04-30
    • US13119255
    • 2009-10-08
    • Takeshi OkamotoKenji SatoTomoaki KatoKenji Mizutani
    • Takeshi OkamotoKenji SatoTomoaki KatoKenji Mizutani
    • G02B6/26
    • H01S5/026G02B6/125G02B6/2813H01S5/50
    • An optical joint (1) includes a 2×2 MMI coupler (30) and a 2×2 MMI coupler (31) joined to the 2×2 MMI coupler (30). The 2×2 MMI coupler (30) includes a port (32) and a port (33) at one side. The 2×2 MMI coupler (31) includes a port (34) and a port (35) at one side. A light-absorbing region (20) is connected to the port (33), and a light-absorbing region (second light-absorbing section) (21) is connected to the port (34). A reflecting boundary (22) that reflects light propagated through the 2×2 MMI coupler (30) or the 2×2 MMI coupler (31) is formed at the junction portion between the 2×2 MMI coupler (30) and the 2×2 MMI coupler (31).
    • 光接头(1)包括2×2MMI耦合器(30)和2×2MMI耦合器(31),其连接到2×2MMI耦合器(30)。 2×2 MMI联接器(30)在一侧包括端口(32)和端口(33)。 2×2MMI耦合器(31)在一侧包括端口(34)和端口(35)。 吸收区域(20)连接到端口(33),并且光吸收区域(第二光吸收部分)(21)连接到端口(34)。 在2×2 MMI耦合器(30)与2×2 MMI耦合器(30)之间的接合部分处形成反射通过2×2MMI耦合器(30)或2×2MMI耦合器(31)传播的光的反射边界(22) 2 MMI耦合器(31)。
    • 3. 发明申请
    • Distributed-feedback semiconductor laser, distributed-feedback semiconductor laser array, and optical module
    • 分布反馈半导体激光器,分布反馈半导体激光器阵列和光学模块
    • US20070104242A1
    • 2007-05-10
    • US10580560
    • 2004-11-12
    • Koji KudoKenji MizutaniKenji SatoTomoaki Kato
    • Koji KudoKenji MizutaniKenji SatoTomoaki Kato
    • H01S3/08
    • B82Y20/00H01S5/0264H01S5/028H01S5/1014H01S5/1039H01S5/124H01S5/2224H01S5/227H01S5/34306H01S5/4031H01S5/4087
    • A distributed-feedback semiconductor laser as a direct modulation light source with a modulation rate over 10 Gb/s having (1) a low threshold current characteristic, (2) a high single-mode characteristic, (3) a high resonant frequency (fr) characteristic, (4) a high temperature characteristic, and (5) adaptability to wide wavelength band and an extremely short active region. The distributed-feedback semiconductor laser 1 comprises an active region 30 for generating the gain of the laser beam and a diffraction grating 13 formed in the active region 30. Out of the two front and back end surfaces sandwiching the active region 30, the front end surface 1a has a reflectivity of 1 percent or less, and the back end surface 1b has a reflectivity of 30 percent or more when viewed from the back end surface 1b toward the front. The coupling coefficient κ of the diffraction grating 13 is 100 cm−1 or more, and the length L of the active region 30 is 150 μm or less. A combination of κ and L provided that Δα/gth is 1 or more is used where Δα is the gain difference between modes and gth=(internal loss αi+mirror loss αm) is the threshold gain.
    • 作为具有(1)低阈值电流特性的调制速率超过10Gb / s的直接调制光源的分布反馈半导体激光器,(2)高单模特性,(3)高谐振频率(fr )特性,(4)高温特性,(5)适用于宽波段和极短的有源区。 分布反馈半导体激光器1包括用于产生激光束的增益的有源区域30和形成在有源区域30中的衍射光栅13.在夹持有源区域30的两个前端和后端表面之外,前端 表面1a的反射率为1%以下,后端面1b从后端面1b向前方观察时的反射率为30%以上。 衍射光栅13的耦合系数kapp为100cm -1以上,有源区30的长度L为150μm以下。 使用kappa和L的组合,其中使用Deltaalpha / g第1个或更多个,其中Deltaalpha是模式之间的增益差异,并且第g个内部损失α i +镜像损失alpha )是阈值增益。
    • 4. 发明授权
    • External resonator-type wavelength tunable laser device
    • 外部谐振器型波长可调激光器件
    • US08189631B2
    • 2012-05-29
    • US12664294
    • 2008-05-22
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • H01S3/13
    • H01S5/141H01S5/02248H01S5/028H01S5/0287H01S5/1039
    • The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
    • 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,λc(nm)表示波长可调激光器件的工作波长范围的中心处的波长。
    • 5. 发明授权
    • Semiconductor laser, module and optical transmitter
    • 半导体激光器,模块和光发射机
    • US08457168B2
    • 2013-06-04
    • US12086287
    • 2007-01-10
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • H01S5/00
    • H01S5/026
    • A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
    • 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。
    • 10. 发明申请
    • Optical intergrated device
    • 光学集成装置
    • US20090268762A1
    • 2009-10-29
    • US11921763
    • 2005-06-08
    • Jan De MerlierKenji SatoKenji MizutaniKoii Kudo
    • Jan De MerlierKenji SatoKenji MizutaniKoii Kudo
    • H01S3/10H01S3/08H01S5/00
    • H01S5/141G02B6/12004G02F1/2257G02F2001/217H01S5/02248H01S5/02284H01S5/026H01S5/0261H01S5/0265H01S5/101H01S5/1085
    • An object of the invention is to provide an optical integrated device which enables to supply a wide range of variable wavelength and to reduce the coupling loss. The optical integrated circuit chip (10) includes a semiconductor optical amplifier section (20), a phase control section (18), a partially reflecting mirror (16) having optical power splitter function and a Mach-Zehnder optical modulator (22), wherein all elements are formed on a same substrate monolithically. On each facet of the optical integrated circuit chip (10), an Anti-Reflection coating (12, 14) is formed respectively. A lens (30), an optical filter (32) and an external resonator mirror (28) are located outside of the optical integrated circuit chip (10), wherein an external cavity laser is formed with a semiconductor optical amplifier (SOA) section (20) operating as gain section, a partially reflecting mirror (16) operating as first reflecting mirror and an external resonator mirror (28) operating as a second mirror.
    • 本发明的目的是提供一种能够提供宽范围的可变波长并减少耦合损耗的光学集成器件。 光集成电路芯片(10)包括半导体光放大器部分(20),相位控制部分(18),具有光功率分配器功能的部分反射镜(16)和马赫 - 策德尔光调制器(22),其中 所有元件均匀地形成在相同的衬底上。 在光集成电路芯片(10)的每个面上分别形成防反射涂层(12,14)。 透镜(30),滤光器(32)和外部谐振镜(28)位于光集成电路芯片(10)的外部,其中外腔激光器形成有半导体光放大器(SOA)部分 20)作为增益部分工作,作为第一反射镜操作的部分反射镜(16)和作为第二反射镜操作的外部谐振器反射镜(28)。