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    • 1. 发明授权
    • External resonator-type wavelength tunable laser device
    • 外部谐振器型波长可调激光器件
    • US08189631B2
    • 2012-05-29
    • US12664294
    • 2008-05-22
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • H01S3/13
    • H01S5/141H01S5/02248H01S5/028H01S5/0287H01S5/1039
    • The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and λc (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
    • 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,λc(nm)表示波长可调激光器件的工作波长范围的中心处的波长。
    • 2. 发明申请
    • EXTERNAL RESONATOR-TYPE WAVELENGTH TUNABLE LASER DEVICE
    • 外部谐振器型波长激光器激光器件
    • US20100246618A1
    • 2010-09-30
    • US12664294
    • 2008-05-22
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • Shinya SudoKenji SatoKoji KudoKenji MizutaniJan De Merlier
    • H01S3/13
    • H01S5/141H01S5/02248H01S5/028H01S5/0287H01S5/1039
    • The present invention provides an external resonator-type wavelength tunable laser device that can properly fulfill a wavelength tuning function even with the use of a planar wavelength tunable reflector involving a considerable level of residual reflection. The external resonator-type wavelength tunable laser device includes a planar reflection structure enabling a reflection spectral peak wavelength to be varied and a semiconductor element as a semiconductor gain medium. The semiconductor gain medium is composed of a multiple quantum well in which product Γ·L of optical confinement constant Γ and semiconductor gain medium length L (μm) of a gain layer is at least 25 μm and at most 40 μm and in which gain peak wavelength λ0 (nm) observed during carrier injected with a maximum modal gain equal to an internal loss of the semiconductor gain medium is larger than −3·ΔR/2+(λc+35) and smaller than (−(Γ·L)/7+8)·ΔR+(−(Γ·L)+λc+45). Here, ΔR (dB) denotes a reflectance difference, and he (nm) denotes a wavelength at a center of an operating wavelength range of the wavelength tunable laser device.
    • 本发明提供一种外部谐振器型波长可调激光器件,其即使使用涉及相当程度的残余反射的平面波长可调谐反射器也能适当地实现波长调谐功能。 外部谐振器型波长可调激光器件包括能够使反射光谱峰值波长变化的平面反射结构和半导体元件作为半导体增益介质。 半导体增益介质由多重量子阱组成,其中光学限制常数Ggr; 并且增益层的半导体增益介质长度L(μm)为至少25μm且至多40μm,并且其中以最大模态增益注入的载流子注入的增益峰值波长λ0(nm)等于半导体的内部损耗 增益介质大于-3·&Dgr; R / 2 +(λc+ 35)且小于( - (&Ggr;·L)/ 7 + 8)·&Dgr; R +( - (&Ggr;·L)+λc+ 45)。 这里,&Dgr; R(dB)表示反射率差,he(nm)表示波长可调激光器件的工作波长范围的中心处的波长。
    • 3. 发明授权
    • External resonator type wavelength-variable laser
    • 外部谐振器型波长可变激光器
    • US07656911B2
    • 2010-02-02
    • US11632213
    • 2005-05-25
    • Kenji MizutaniKoji KudoKenji SatoJan De Merlier
    • Kenji MizutaniKoji KudoKenji SatoJan De Merlier
    • H01S5/10
    • H01S5/141H01S3/1062H01S5/005H01S5/02216H01S5/02248H01S5/02415H01S5/02438H01S5/02446H01S5/02492H01S5/0625H01S5/1039
    • To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔfFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(j×Δffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|
    • 为了促进外部谐振器型波长可变激光器的相位调整。 外部谐振器型波长可变激光器(50)包括半导体光放大器(1),具有周期性频率特性的波长选择滤波器(3),外部谐振器(6)和波长可变滤波器(4)。 Deltaf分为一个或多个区域。 对于一个Deltafi区域,满足以下条件:mj =(jxDeltaffs)/ DeltafFP其中Deltaffs:波长选择滤波器的周期,DeltafFP:取决于外部谐振器长度的法布里 - 珀罗模式间隔,j:不整数 小于1并且不大于(Deltafi / Deltaffs)。 系数Mj是通过舍入系数mj的小数点后的第一位数而获得的整数。 系数Ni,j是通过丢弃Deltafi /(jxDeltaffs)小数点后的第一位数获得的整数。 在这方面,对于一个j,满足(| Ni,jx2pi(Mj-mj)|
    • 4. 发明申请
    • External Resonator Type Wavelength-Variable Laser
    • 外部谐振器类型波长可变激光器
    • US20080025349A1
    • 2008-01-31
    • US11632213
    • 2005-05-25
    • Kenji MizutaniKoji KudoKenji SatoJan De Merlier
    • Kenji MizutaniKoji KudoKenji SatoJan De Merlier
    • H01S5/14
    • H01S5/141H01S3/1062H01S5/005H01S5/02216H01S5/02248H01S5/02415H01S5/02438H01S5/02446H01S5/02492H01S5/0625H01S5/1039
    • To facilitate phase adjustment in an external resonator type wavelength-variable laser. An external resonator type wavelength-variable laser (50) includes a semiconductor light amplifier (1), a wavelength selection filter (3) having periodic frequency characteristics, an external resonator (6), and a wavelength-variable filter (4). Δf is divided into one or more regions. The following conditions are satisfied for one Δfi region: mj=(j×Δffs)/ΔFP where Δffs: a period of the wavelength selection filter, ΔfFP: a Fabry-Perot mode interval dependent on a length of the external resonator, j: an integer not smaller than 1 and not larger than (Δfi/Δffs). A coefficient Mj is an integer obtained by rounding off the first digit after decimal point of the coefficient mj. A coefficient Ni,j is an integer obtained by discarding the first digit after decimal point of Δfi/(jΔffs). In this regard, a relation of (|Ni,j×2π(Mj−mj)|
    • 为了促进外部谐振器型波长可变激光器的相位调整。 外部谐振器型波长可变激光器(50)包括半导体光放大器(1),具有周期性频率特性的波长选择滤波器(3),外部谐振器(6)和波长可变滤波器(4)。 Deltaf分为一个或多个区域。 对于一个Deltaf 区域满足以下条件:m(j)=(jxDeltaf&lt; fs)/ Delta&lt;&lt;&lt; Deltaf :波长选择滤波器的周期,DeltafFP:取决于外部谐振器的长度的法布里 - 珀罗模式间隔,j:不小于1且不大于(Deltaf < SUB>我 / Deltaf fs )。 系数M N是通过舍入系数m≠j的小数点后的第一数位而获得的整数。 系数N i,j是通过丢弃Deltaf i(jDeltaf&lt; fs&gt;)的小数点之后的第一位获得的整数。 在这方面,满足(| N 1,j 2 x 2 pi(M 1 -j j 2)|π2)的关系 一个j。
    • 5. 发明授权
    • Semiconductor laser, module and optical transmitter
    • 半导体激光器,模块和光发射机
    • US08457168B2
    • 2013-06-04
    • US12086287
    • 2007-01-10
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • H01S5/00
    • H01S5/026
    • A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
    • 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。
    • 10. 发明申请
    • Semiconductor Laser, Module and Optical Transmitter
    • 半导体激光器,模块和光发射机
    • US20090274187A1
    • 2009-11-05
    • US12086287
    • 2007-01-10
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • Koji KudoShinya SudoKenji SatoKenji Mizutani
    • H01S5/028H01S5/026H01S5/24
    • H01S5/026
    • A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.
    • 具有光放大功能的半导体光波导A和具有光控功能的半导体光波导-B一起集成在同一基板上。 面向隔离沟槽的半导体光波导A的面和面向隔离沟槽的半导体光波导-B的面被配置为使用光学干涉的复合光反射器/光连接器。 半导体光波导A的小面实现不高于对应于切割面的反射率并且不小于几个百分比的光学反射率,并且半导体光波导A与第二半导体光波导A之间的光耦合系数不低于50% 半导体光波导-B。