会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • Graphic processing method and device
    • 图形处理方法和装置
    • US20050024361A1
    • 2005-02-03
    • US10875295
    • 2004-06-25
    • Takahiro IkedaKoji HashimotoTakeshi Ito
    • Takahiro IkedaKoji HashimotoTakeshi Ito
    • G06T3/00G06K9/48G06T7/00G06T11/20G06T11/00
    • G06T7/0004G06K9/48G06T7/66G06T2207/20044
    • There is disclosed a graphic processing method in which a first figure skeleton apart from an outline of a figure by each equal distance in a central direction of the figure is calculated using at least one of a medial axis and a chordal axis with respect to a figure representing the outline of the object shape reflected in a digital image by a set of points, branch lines to the skeleton from a vertex of the figure in the calculated first figure skeleton are removed to obtain a second figure skeleton, and a curve coordinate system is defined using the second figure skeleton as one coordinate axis and using a distance between the second figure skeleton and the outline of the figure as the other coordinate axis with respect to data obtained by one circulation of the outline of the figure using one end point of the second figure skeleton as a start point and using the other end point as a terminal point to transform the coordinate of points on the outline of the figure into the other coordinate axis of the curve coordinate system.
    • 公开了一种图形处理方法,其中使用相对于图形的中间轴和弦线中的至少一个来计算除了图形的中心方向上每个相等距离的图形的轮廓之外的第一图形框架 代表通过一组点反映在数字图像中的对象形状的轮廓,去除所计算的第一图形骨架中的从图形的顶点到骨架的分支线以获得第二图形骨架,并且曲线坐标系为 使用第二图形骨架作为一个坐标轴定义,并且使用第二图形框架和图形的轮廓之间的距离作为另一个坐标轴,相对于通过使用图形的一个端点的图形的轮廓的一次循环而获得的数据 第二个图形骨架作为起始点,并使用另一个终点作为终点将图形轮廓上的点的坐标转换为另一个坐标 曲线坐标系的坐标轴。
    • 4. 发明授权
    • Graphic processing method and device
    • 图形处理方法和装置
    • US07177480B2
    • 2007-02-13
    • US10875295
    • 2004-06-25
    • Takahiro IkedaKoji HashimotoTakeshi Ito
    • Takahiro IkedaKoji HashimotoTakeshi Ito
    • G06K9/42G09G5/00
    • G06T7/0004G06K9/48G06T7/66G06T2207/20044
    • There is disclosed a graphic processing method in which a first figure skeleton apart from an outline of a figure by each equal distance in a central direction of the figure is calculated using at least one of a medial axis and a chordal axis with respect to a figure representing the outline of the object shape reflected in a digital image by a set of points, branch lines to the skeleton from a vertex of the figure in the calculated first figure skeleton are removed to obtain a second figure skeleton, and a curve coordinate system is defined using the second figure skeleton as one coordinate axis and using a distance between the second figure skeleton and the outline of the figure as the other coordinate axis with respect to data obtained by one circulation of the outline of the figure using one end point of the second figure skeleton as a start point and using the other end point as a terminal point to transform the coordinate of points on the outline of the figure into the other coordinate axis of the curve coordinate system.
    • 公开了一种图形处理方法,其中使用相对于图形的中间轴和弦线中的至少一个来计算除了图形的中心方向上每个相等距离的图形的轮廓之外的第一图形框架 代表通过一组点反映在数字图像中的对象形状的轮廓,去除所计算的第一图形骨架中的从图形的顶点到骨架的分支线以获得第二图形骨架,并且曲线坐标系为 使用第二图形骨架作为一个坐标轴定义,并且使用第二图形框架和图形的轮廓之间的距离作为另一个坐标轴,相对于通过使用图形的一个端点的图形的轮廓的一次循环而获得的数据 第二个图形骨架作为起始点,并使用另一个终点作为终点将图形轮廓上的点的坐标转换为另一个坐标 曲线坐标系的坐标轴。
    • 6. 发明申请
    • PATTERN CREATION METHOD, MASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    • 图形创建方法,掩模制造方法和半导体器件制造方法
    • US20080235650A1
    • 2008-09-25
    • US12050764
    • 2008-03-18
    • Takeshi ItoSatoshi TanakaToshiya KotaniTadahito FujisawaKoji Hashimoto
    • Takeshi ItoSatoshi TanakaToshiya KotaniTadahito FujisawaKoji Hashimoto
    • G06F17/50
    • G03F1/00
    • A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.
    • 一种图案创建方法,包括在第一层上布置集成电路图案的最极端格式的数据,并且在第二层上布置不包括最末端图案的集成电路图案的数据,提取第一最接近的数据 图案最接近于来自第二层的最末端图案,并将所提取的数据转换为第三层,产生在第四层中接触第一最近图案和最末端图案的接触图案的数据,产生 接触图案的非重叠图案的数据,不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分,提取最接近图案的第二最接近图案的数据,其最接近非重叠图案并且转换 提取的数据到第一层。
    • 7. 发明授权
    • Pattern creation method, mask manufacturing method and semiconductor device manufacturing method
    • 图案形成方法,掩模制造方法和半导体器件制造方法
    • US07669172B2
    • 2010-02-23
    • US12050764
    • 2008-03-18
    • Takeshi ItoSatoshi TanakaToshiya KotaniTadahito FujisawaKoji Hashimoto
    • Takeshi ItoSatoshi TanakaToshiya KotaniTadahito FujisawaKoji Hashimoto
    • G06F17/50
    • G03F1/00
    • A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.
    • 一种图案创建方法,包括在第一层上布置集成电路图案的最极端格式的数据,并且在第二层上布置不包括最末端图案的集成电路图案的数据,提取第一最接近的数据 图案最接近于来自第二层的最末端图案,并将所提取的数据转换为第三层,产生在第四层中接触第一最近图案和最末端图案的接触图案的数据,产生 接触图案的非重叠图案的数据,不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分,提取最接近图案的第二最接近图案的数据,其最接近非重叠图案并且转换 提取的数据到第一层。
    • 8. 发明申请
    • Method for forming pattern and method for manufacturing semiconductor device
    • 形成图案的方法和制造半导体器件的方法
    • US20050123858A1
    • 2005-06-09
    • US10969174
    • 2004-10-21
    • Takeshi ItoKoji HashimotoTadahito Fujisawa
    • Takeshi ItoKoji HashimotoTadahito Fujisawa
    • G03F7/00G03F7/20G03F7/40H01L21/027H01L21/28
    • G03F7/40G03F7/0035
    • A method for forming a pattern having holes arrayed with spacing less than resolution of exposure tool, includes forming first resist pattern including first resist openings having width and spacing equal to or greater than the resolution, in first resist film coated on underlying film. First shrank pattern including first holes having dimension equal to or less than the resolution in the underlying film is formed by first shrink process to the first resist pattern. Second resist pattern including second resist openings arrayed between the first holes having width equal to or greater than the resolution, is formed in second resist film coated on the underlying film. Second shrank pattern including second holes having dimension equal to or less than the resolution in the underlying film is formed by second shrink process to the second resist pattern.
    • 一种用于形成具有间隔小于曝光工具的分辨率的孔的图案的方法,包括在涂覆在下面的膜上的第一抗蚀剂膜中形成包括具有等于或大于分辨率的宽度和间距的第一抗蚀剂开口的第一抗蚀剂图案。 通过对第一抗蚀剂图案进行第一收缩处理,形成包括尺寸等于或小于底层膜中的分辨率的第一孔的第一缩小图案。 第二抗蚀剂图案包括排列在宽度等于或大于分辨率的第一孔之间的第二抗蚀剂孔,形成在涂覆在下面的膜上的第二抗蚀剂膜中。 通过对第二抗蚀剂图案的第二收缩工艺形成包括尺寸等于或小于底层膜中的分辨率的第二孔的第二缩小图案。