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1. 发明授权

US07669172B2 Pattern creation method, mask manufacturing method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法，掩模制造方法和半导体器件制造方法
公开(公告)号：US07669172B2
公开(公告)日：2010-02-23
申请号：US12050764
申请日：2008-03-18
申请人： Takeshi Ito , Satoshi Tanaka , Toshiya Kotani , Tadahito Fujisawa , Koji Hashimoto
发明人： Takeshi Ito , Satoshi Tanaka , Toshiya Kotani , Tadahito Fujisawa , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： G03F1/00
摘要： A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.
摘要翻译：一种图案创建方法，包括在第一层上布置集成电路图案的最极端格式的数据，并且在第二层上布置不包括最末端图案的集成电路图案的数据，提取第一最接近的数据图案最接近于来自第二层的最末端图案，并将所提取的数据转换为第三层，产生在第四层中接触第一最近图案和最末端图案的接触图案的数据，产生接触图案的非重叠图案的数据，不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分，提取最接近图案的第二最接近图案的数据，其最接近非重叠图案并且转换提取的数据到第一层。

2. 发明申请

US20080235650A1 PATTERN CREATION METHOD, MASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 失效
标题翻译：图形创建方法，掩模制造方法和半导体器件制造方法
公开(公告)号：US20080235650A1
公开(公告)日：2008-09-25
申请号：US12050764
申请日：2008-03-18
申请人： Takeshi Ito , Satoshi Tanaka , Toshiya Kotani , Tadahito Fujisawa , Koji Hashimoto
发明人： Takeshi Ito , Satoshi Tanaka , Toshiya Kotani , Tadahito Fujisawa , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： G03F1/00
摘要： A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.
摘要翻译：一种图案创建方法，包括在第一层上布置集成电路图案的最极端格式的数据，并且在第二层上布置不包括最末端图案的集成电路图案的数据，提取第一最接近的数据图案最接近于来自第二层的最末端图案，并将所提取的数据转换为第三层，产生在第四层中接触第一最近图案和最末端图案的接触图案的数据，产生接触图案的非重叠图案的数据，不包括在第五层中具有最末端图案和最前端图案和第一最近图案的重叠部分，提取最接近图案的第二最接近图案的数据，其最接近非重叠图案并且转换提取的数据到第一层。

3. 发明申请

US20050123858A1 Method for forming pattern and method for manufacturing semiconductor device 审中-公开
标题翻译：形成图案的方法和制造半导体器件的方法
公开(公告)号：US20050123858A1
公开(公告)日：2005-06-09
申请号：US10969174
申请日：2004-10-21
申请人： Takeshi Ito , Koji Hashimoto , Tadahito Fujisawa
发明人： Takeshi Ito , Koji Hashimoto , Tadahito Fujisawa
IPC分类号： G03F7/00 , G03F7/20 , G03F7/40 , H01L21/027 , H01L21/28
CPC分类号： G03F7/40 , G03F7/0035
摘要： A method for forming a pattern having holes arrayed with spacing less than resolution of exposure tool, includes forming first resist pattern including first resist openings having width and spacing equal to or greater than the resolution, in first resist film coated on underlying film. First shrank pattern including first holes having dimension equal to or less than the resolution in the underlying film is formed by first shrink process to the first resist pattern. Second resist pattern including second resist openings arrayed between the first holes having width equal to or greater than the resolution, is formed in second resist film coated on the underlying film. Second shrank pattern including second holes having dimension equal to or less than the resolution in the underlying film is formed by second shrink process to the second resist pattern.
摘要翻译：一种用于形成具有间隔小于曝光工具的分辨率的孔的图案的方法，包括在涂覆在下面的膜上的第一抗蚀剂膜中形成包括具有等于或大于分辨率的宽度和间距的第一抗蚀剂开口的第一抗蚀剂图案。通过对第一抗蚀剂图案进行第一收缩处理，形成包括尺寸等于或小于底层膜中的分辨率的第一孔的第一缩小图案。第二抗蚀剂图案包括排列在宽度等于或大于分辨率的第一孔之间的第二抗蚀剂孔，形成在涂覆在下面的膜上的第二抗蚀剂膜中。通过对第二抗蚀剂图案的第二收缩工艺形成包括尺寸等于或小于底层膜中的分辨率的第二孔的第二缩小图案。

4. 发明授权

US07384712B2 Photo mask, exposure method using the same, and method of generating data 失效
标题翻译：照片掩模，使用其的曝光方法以及生成数据的方法
公开(公告)号：US07384712B2
公开(公告)日：2008-06-10
申请号：US10832995
申请日：2004-04-28
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/30 , G03F1/32
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.
摘要翻译：一种光掩模，其形成有使用曝光装置转印到基板的图案，所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围通过屏蔽部分或半透明膜并具有纵向方向和纬度方向，辅助图案位于与图案行在与该一个方向正交的方向上特定距离处，辅助图案的纵向方向基本上平行于一个方向，辅助图案的纵向长度等于或大于图案行的纵向长度，辅助图案不被转印到基底。

5. 发明申请

US20050003305A1 Photo mask, exposure method using the same, and method of generating data 失效
标题翻译：照片掩模，使用其的曝光方法以及生成数据的方法
公开(公告)号：US20050003305A1
公开(公告)日：2005-01-06
申请号：US10832995
申请日：2004-04-28
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03C5/00 , G03F1/32 , G03F1/36 , G03F1/76 , G03F7/20 , G06F17/50 , H01L21/027
CPC分类号： G03F1/36 , G03F1/30 , G03F1/32
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.
摘要翻译：一种光掩模，其形成有使用曝光装置转印到基板的图案，所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围通过屏蔽部分或半透明膜并具有纵向方向和纬度方向，辅助图案位于与图案行在与该一个方向正交的方向上特定距离处，辅助图案的纵向方向基本上平行于一个方向，辅助图案的纵向长度等于或大于图案行的纵向长度，辅助图案不被转印到基底。

6. 发明授权

US07682757B2 Pattern layout for forming integrated circuit 有权
标题翻译：用于形成集成电路的图案布局
公开(公告)号：US07682757B2
公开(公告)日：2010-03-23
申请号：US11401837
申请日：2006-04-12
申请人： Hiromitsu Mashita , Tadahito Fujisawa , Minoru Inomoto , Koji Hashimoto , Yasunobu Kai
发明人： Hiromitsu Mashita , Tadahito Fujisawa , Minoru Inomoto , Koji Hashimoto , Yasunobu Kai
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A pattern layout for forming an integrated circuit includes a first device pattern, a second device pattern, and an auxiliary pattern. The first device pattern includes a line and a space alternately arrayed on a fixed pitch having regular intervals in a first direction. The second device pattern is disposed on the fixed pitch and separated from the first device pattern in the first direction. The second device pattern has a pattern width an odd-number times larger than the regular intervals of the fixed pitch, wherein the odd-number is set to be three or more. The auxiliary pattern is disposed on the fixed pitch and within the second device pattern and configured not to be resolved by light exposure.
摘要翻译：用于形成集成电路的图案布局包括第一器件图案，第二器件图案和辅助图案。第一装置图案包括在第一方向上具有规则间隔的固定间距交替排列的线和空间。第二装置图案设置在固定节距上并且在第一方向上与第一装置图案分离。第二装置图案的图案宽度比固定间距的规则间隔大奇数倍，其中奇数被设定为三个以上。辅助图案设置在固定间距上并且在第二装置图案内并且被配置为不被曝光解决。

7. 发明授权

US07662523B2 Photo mask, exposure method using the same, and method of generating data 失效
公开(公告)号：US07662523B2
公开(公告)日：2010-02-16
申请号：US12118510
申请日：2008-05-09
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/36 , G03F1/30 , G03F1/32
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

8. 发明申请

US20080220377A1 PHOTO MASK, EXPOSURE METHOD USING THE SAME, AND METHOD OF GENERATING DATA 失效
公开(公告)号：US20080220377A1
公开(公告)日：2008-09-11
申请号：US12118510
申请日：2008-05-09
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03F7/20
CPC分类号： G03F1/36 , G03F1/30 , G03F1/32
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.

9. 发明申请

US20060228636A1 Pattern layout for forming integrated circuit 有权
标题翻译：用于形成集成电路的图案布局
公开(公告)号：US20060228636A1
公开(公告)日：2006-10-12
申请号：US11401837
申请日：2006-04-12
申请人： Hiromitsu Mashita , Tadahito Fujisawa , Minoru Inomoto , Koji Hashimoto , Yasunobu Kai
发明人： Hiromitsu Mashita , Tadahito Fujisawa , Minoru Inomoto , Koji Hashimoto , Yasunobu Kai
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A pattern layout for forming an integrated circuit includes a first device pattern, a second device pattern, and an auxiliary pattern. The first device pattern includes a line and a space alternately arrayed on a fixed pitch having regular intervals in a first direction. The second device pattern is disposed on the fixed pitch and separated from the first device pattern in the first direction. The second device pattern has a pattern width an odd-number times larger than the regular intervals of the fixed pitch, wherein the odd-number is set to be three or more. The auxiliary pattern is disposed on the fixed pitch and within the second device pattern and configured not to be resolved by light exposure.
摘要翻译：用于形成集成电路的图案布局包括第一器件图案，第二器件图案和辅助图案。第一装置图案包括在第一方向上具有规则间隔的固定间距交替排列的线和空间。第二装置图案设置在固定节距上并且在第一方向上与第一装置图案分离。第二装置图案的图案宽度比固定间距的规则间隔大奇数倍，其中奇数被设定为三个以上。辅助图案设置在固定间距上并且在第二装置图案内并且被配置为不被曝光解决。

10. 发明授权

US07794899B2 Photo mask, exposure method using the same, and method of generating data 失效
标题翻译：照片掩模，使用其的曝光方法以及生成数据的方法
公开(公告)号：US07794899B2
公开(公告)日：2010-09-14
申请号：US12118578
申请日：2008-05-09
申请人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
发明人： Koji Hashimoto , Tadahito Fujisawa , Yuko Kono , Takashi Obara
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/30 , G03F1/32
摘要： A photo mask formed with patterns to be transferred to a substrate using an exposure apparatus, the photo mask comprising a pattern row having three or more hole patterns surrounded by a shielding portion or a semitransparent film and arranged along one direction, and an assist pattern surrounded by the shielding portion or semitransparent film and having a longitudinal direction and a latitudinal direction, the assist pattern being located at a specified distance from the pattern row in a direction orthogonal to the one direction, the longitudinal direction of the assist pattern being substantially parallel with the one direction, the longitudinal length of the assist pattern being equivalent to or larger than the longitudinal length of the pattern row, the assist pattern being not transferred to the substrate.
摘要翻译：一种光掩模，其形成有使用曝光装置转印到基板的图案，所述光掩模包括具有由屏蔽部分或半透明膜围绕并沿着一个方向布置的三个或更多孔图案的图案行和辅助图案包围通过屏蔽部分或半透明膜并具有纵向方向和纬度方向，辅助图案位于与图案行在与该一个方向正交的方向上特定距离处，辅助图案的纵向方向基本上平行于一个方向，辅助图案的纵向长度等于或大于图案行的纵向长度，辅助图案不被转印到基底。

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