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1. 发明授权

US5494524A Vertical heat treatment device for semiconductor 失效
标题翻译：半导体立式热处理装置
公开(公告)号：US5494524A
公开(公告)日：1996-02-27
申请号：US166999
申请日：1993-12-16
申请人： Takeshi Inaba , Eiichi Toya , Takashi Tanaka , Yasumi Sasaki
发明人： Takeshi Inaba , Eiichi Toya , Takashi Tanaka , Yasumi Sasaki
IPC分类号： H01L21/205 , C23C16/01 , C23C16/32 , C23C16/34 , C30B25/12 , H01L21/22 , H01L21/31 , H01L21/673 , H01L21/683 , C23C16/00 , B05C13/00 , B05C13/02 , B05C21/00
CPC分类号： H01L21/67306 , C23C16/01 , C23C16/325 , C23C16/345 , C30B25/12 , H01L21/67309
摘要： End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.
摘要翻译：端部件位于垂直热处理装置的顶部和底部。多个支撑构件垂直地安装在端部构件上。多个晶片保持构件以平行方式固定在支撑构件上，每个晶片保持构件形成为大致圆弧形状。晶片保持构件通过CVD法由SiC或Si 3 N 4通过CVD法制成。晶片保持构件具有其上要放置晶片的板部分和连接到板部分的加强部分。板部的厚度为100-1000微米。

2. 发明授权

US5449545A Ceramic device 失效
标题翻译：陶瓷装置
公开(公告)号：US5449545A
公开(公告)日：1995-09-12
申请号：US006856
申请日：1993-01-21
申请人： Eiichi Toya , Yukio Itoh , Takashi Tanaka , Yasumi Sasaki
发明人： Eiichi Toya , Yukio Itoh , Takashi Tanaka , Yasumi Sasaki
IPC分类号： G03F1/22 , G03F1/60 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22 , Y10T428/24322 , Y10T428/24331 , Y10T428/24355 , Y10T428/24917 , Y10T428/265 , Y10T428/30
摘要： A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.
摘要翻译：公开了一种陶瓷器件，其具有硅基板，形成在硅基板的第一表面上的第一陶瓷膜，形成在与第一表面相对的硅基板的第二表面上的第二陶瓷膜，以及操作开口形成在第一和第二表面之间的硅基板中。暴露于操作开口的第一陶瓷膜的表面部分是具有0.05微米或更小的中心线平均高度Ra的镜面。在蚀刻步骤中，在硅基板的第一表面和第一陶瓷膜之间可以形成镜面保持膜，用于在蚀刻步骤中保持镜面，以蚀刻硅基板，并且可以在蚀刻中部分地减少硅基板用于形成操作开口的步骤，从而将镜面保持膜的相应部分暴露于操作开口。

3. 发明授权

US5324411A Electrode plate for plasma etching 失效
标题翻译：用于等离子体蚀刻的电极板
公开(公告)号：US5324411A
公开(公告)日：1994-06-28
申请号：US946602
申请日：1992-09-18
申请人： Masahiko Ichishima , Yasumi Sasaki , Eiichi Toya , Masatoshi Kasahara , Ritsurou Makita
发明人： Masahiko Ichishima , Yasumi Sasaki , Eiichi Toya , Masatoshi Kasahara , Ritsurou Makita
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/3244 , Y10S156/914
摘要： A disc-shaped electrode plate body is made of high-purity glassy carbon and has a large number of very-small-diameter through holes each of which has a plurality of spherical recesses in its internal wall surface.
摘要翻译：盘状电极板体由高纯度玻璃碳制成，并且具有大量非常小直径的通孔，每个通孔在其内壁表面具有多个球形凹槽。

4. 发明授权

US5200157A Susceptor for vapor-growth deposition 失效
标题翻译：蒸气生长沉积物的受体
公开(公告)号：US5200157A
公开(公告)日：1993-04-06
申请号：US668329
申请日：1991-03-14
申请人： Eiichi Toya , Masayuki Ohkawa , Kazuo Itoh , Yasumi Sasaki
发明人： Eiichi Toya , Masayuki Ohkawa , Kazuo Itoh , Yasumi Sasaki
IPC分类号： C30B25/12
CPC分类号： C30B25/12
摘要： The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.
摘要翻译：根据本发明的感受体包括呈梯形板形状的主体，并且在其表面上形成有三个圆形凹陷。主体由堆积密度为3.00g / cm 3以上的碳化硅构成。主体的表面区域的至少70％由直径为5μm以上的结晶粒子构成。主体的厚度例如为700μm。六个感受体连接到六角形上板，该六角形上板被固定到轴上，并且还连接到六边形下板，从而形成筒。将硅晶片放置在圆形凹陷中，使得可以在晶片上外延形成单晶层。

5. 发明授权

US5074017A Susceptor 失效
标题翻译： SUSCEPTOR
公开(公告)号：US5074017A
公开(公告)日：1991-12-24
申请号：US454782
申请日：1989-12-26
申请人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya , Yasumi Sasaki
发明人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya , Yasumi Sasaki
IPC分类号： C30B25/12 , C23C16/44 , C23C16/458 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4584 , Y10T29/41
摘要： A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
摘要翻译：用于垂直气相生长装置的基座包括具有上表面的基座体（12），形成在基座体（12）的上表面中的多个晶片接收部分（17），以及固定在靠近晶片设置部分（17）的基座主体（12）的上表面中。板（16）具有上表面，使得当晶片（5）安装在晶片设置部分（17）中时，板（16）和晶片（5）的上表面基本上位于同一平面。板（16）由石英玻璃或熔融石英制成。

6. 发明授权

US6071343A Heat treatment jig and method of producing the same 失效
标题翻译：热处理夹具及其制作方法
公开(公告)号：US6071343A
公开(公告)日：2000-06-06
申请号：US743791
申请日：1996-11-05
申请人： Takeshi Inaba , Shuichi Takeda , Shigeo Kato , Yasumi Sasaki , Yukio Ito , Masanori Sato
发明人： Takeshi Inaba , Shuichi Takeda , Shigeo Kato , Yasumi Sasaki , Yukio Ito , Masanori Sato
IPC分类号： C04B41/50 , C04B41/87 , C23C16/02 , C23C16/32 , C04B35/36
CPC分类号： C04B41/009 , C04B41/5059 , C04B41/87 , C23C16/0272 , C23C16/325
摘要： A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.
摘要翻译：具有用于制造半导体的碳化硅涂层的热处理夹具包括通过CVD法在基材的表面上形成的基材和碳化硅膜。碳化硅膜由基本上平行于基材的表面的多个层形成，并且至少一个层形成为核形成层，而另外的层被形成为普通的晶体层，使得第二层之间的晶体生长在在核形成层上的普通晶体层是不连续的，而在普通晶体层中的碳化硅的晶体生长在普通晶体层的厚度方向上是连续的。

7. 发明授权

US09188396B2 Flattened heat pipe and manufacturing method thereof 有权
标题翻译：扁平热管及其制造方法
公开(公告)号：US09188396B2
公开(公告)日：2015-11-17
申请号：US13355076
申请日：2012-01-20
申请人： Hideaki Kameoka , Masanobu Sugimura , Tatsuro Miura , Yasumi Sasaki , Hiroshi Okada , Shinichi Furumoto , Masaaki Yamamoto
发明人： Hideaki Kameoka , Masanobu Sugimura , Tatsuro Miura , Yasumi Sasaki , Hiroshi Okada , Shinichi Furumoto , Masaaki Yamamoto
IPC分类号： F28D15/00 , F28D15/04 , F28D15/02 , H01L23/427
CPC分类号： F28D15/04 , F28D15/0233 , F28D15/046 , H01L23/427 , H01L2924/0002 , Y10T29/49353 , H01L2924/00
摘要： The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container.
摘要翻译：本发明提供一种扁平的热管，其蒸气流动通道不被堵塞并且具有优异的毛细管力。扁平化的热管具有通过使管状容器变平，多个芯体结构在容器内沿纵向方向排列形成的密闭容器，以形成至少部分在容器内毛细管力大的锐角部分，由芯体结构的外周面和容器的内壁面形成的中空部分和密封到容器中的工作流体。

8. 发明申请

US20120118537A1 FLATTENED HEAT PIPE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：扁管热管及其制造方法
公开(公告)号：US20120118537A1
公开(公告)日：2012-05-17
申请号：US13355076
申请日：2012-01-20
申请人： Hideaki KAMEOKA , Masanobu Sugimura , Tatsuro Miura , Yasumi Sasaki , Hiroshi Okada , Shinichi Furumoto , Masaaki Yamamoto
发明人： Hideaki KAMEOKA , Masanobu Sugimura , Tatsuro Miura , Yasumi Sasaki , Hiroshi Okada , Shinichi Furumoto , Masaaki Yamamoto
IPC分类号： F28D15/04 , B21D53/02
CPC分类号： F28D15/04 , F28D15/0233 , F28D15/046 , H01L23/427 , H01L2924/0002 , Y10T29/49353 , H01L2924/00
摘要： The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container.
摘要翻译：本发明提供一种扁平的热管，其蒸气流动通道不被堵塞并且具有优异的毛细管力。扁平化的热管具有通过使管状容器变平，多个芯体结构在容器内沿纵向方向排列形成的密闭容器，以形成至少部分在容器内毛细管力大的锐角部分，由芯体结构的外周面和容器的内壁面形成的中空部分和密封到容器中的工作流体。

9. 发明授权

US4670320A Alumina formed body and method for its manufacture 失效
标题翻译：氧化铝成型体及其制造方法
公开(公告)号：US4670320A
公开(公告)日：1987-06-02
申请号：US855402
申请日：1986-04-24
申请人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
发明人： Masayoshi Yamaguchi , Kazunori Meguro , Shuitsu Matsuo , Yasumi Sasaki
IPC分类号： C04B35/10 , C04B35/65 , C04B35/80 , C04B38/00 , C04B38/04 , B32B3/00 , B32B5/14 , B32B19/00 , B44C1/22
CPC分类号： C04B38/0051 , C04B35/10 , C04B35/65 , C04B35/80 , C04B38/04 , Y10T428/24355 , Y10T428/249956 , Y10T428/249957 , Y10T428/24997 , Y10T428/31
摘要： An alumina formed body comprising many long alumina elements oriented in random directions and interconnected so as to constitute a porous matrix comprising a large number of fine pores. Such a body is manufactured by reacting a glass-formed body comprising silica with aluminum at high temperature to form an alumina composite material comprising alumina, aluminum and silicon and removing aluminum and silicon from the aluminum composite material.
摘要翻译：一种氧化铝成形体，包括沿随机方向取向的多个长的氧化铝元件，并且相互连接，从而构成包含大量细孔的多孔基体。通过使包含二氧化硅的玻璃成形体与铝在高温下反应形成包含氧化铝，铝和硅的氧化铝复合材料并从铝复合材料中除去铝和硅来制造这样的主体。

10. 发明授权

US07278469B2 Thin sheet type heat pipe 有权
标题翻译：薄板式热管
公开(公告)号：US07278469B2
公开(公告)日：2007-10-09
申请号：US10430923
申请日：2003-05-07
申请人： Yasumi Sasaki , Yasuyuki Ooi
发明人： Yasumi Sasaki , Yasuyuki Ooi
IPC分类号： H05K7/20
CPC分类号： F28D15/046 , F28D15/0241 , H01L23/427 , H01L2924/0002 , H01L2924/00
摘要： The present invention has proposed a thin sheet type heat pipe comprising: a hermetically sealed container which is formed of foil sheets opposed and jointed at peripheral portions; at least one spacer which is movably housed in said container and has a fluid path to exert a capillary force; at least one spacer which is movably housed in said container and has no fluid path; and a working fluid enclosed in said container.
摘要翻译：本发明提出了一种薄板式热管，其特征在于，包括：密封容器，其由在周边部分相对并接合的箔片形成; 至少一个间隔件，其可移动地容纳在所述容器中并且具有施加毛细管力的流体路径; 至少一个可移动地容纳在所述容器中并且没有流体路径的间隔件; 以及封闭在所述容器中的工作流体。

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