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    • 2. 发明授权
    • Ceramic device
    • 陶瓷装置
    • US5449545A
    • 1995-09-12
    • US006856
    • 1993-01-21
    • Eiichi ToyaYukio ItohTakashi TanakaYasumi Sasaki
    • Eiichi ToyaYukio ItohTakashi TanakaYasumi Sasaki
    • G03F1/22G03F1/60H01L21/027G03F9/00
    • G03F1/22Y10T428/24322Y10T428/24331Y10T428/24355Y10T428/24917Y10T428/265Y10T428/30
    • A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.
    • 公开了一种陶瓷器件,其具有硅基板,形成在硅基板的第一表面上的第一陶瓷膜,形成在与第一表面相对的硅基板的第二表面上的第二陶瓷膜,以及操作 开口形成在第一和第二表面之间的硅基板中。 暴露于操作开口的第一陶瓷膜的表面部分是具有0.05微米或更小的中心线平均高度Ra的镜面。 在蚀刻步骤中,在硅基板的第一表面和第一陶瓷膜之间可以形成镜面保持膜,用于在蚀刻步骤中保持镜面,以蚀刻硅基板,并且可以在蚀刻中部分地减少硅基板 用于形成操作开口的步骤,从而将镜面保持膜的相应部分暴露于操作开口。
    • 3. 发明授权
    • Susceptor for vapor-growth deposition
    • 蒸气生长沉积物的受体
    • US5200157A
    • 1993-04-06
    • US668329
    • 1991-03-14
    • Eiichi ToyaMasayuki OhkawaKazuo ItohYasumi Sasaki
    • Eiichi ToyaMasayuki OhkawaKazuo ItohYasumi Sasaki
    • C30B25/12
    • C30B25/12
    • The susceptor according to the present invention comprises a main body in the shape of a trapezoidal plate, and which has three circular depressions formed in its surface. The main body is made of silicon carbide having a bulk density of 3.00 g/cm.sup.3 or more. At least 70% of the surface region of the main body is made of crystal particles having a diameter of 5 .mu.m or more. The main body has a thickness of, for example, 700 .mu.m. Six susceptors are attached to a hexagonal upper plate which is fastened to a shaft, and also to a hexagonal lower plate, thereby forming a barrel. Silicon wafers are placed in the circular depressions, so that single-crystal layers may be epitaxially formed on the wafers.
    • 根据本发明的感受体包括呈梯形板形状的主体,并且在其表面上形成有三个圆形凹陷。 主体由堆积密度为3.00g / cm 3以上的碳化硅构成。 主体的表面区域的至少70%由直径为5μm以上的结晶粒子构成。 主体的厚度例如为700μm。 六个感受体连接到六角形上板,该六角形上板被固定到轴上,并且还连接到六边形下板,从而形成筒。 将硅晶片放置在圆形凹陷中,使得可以在晶片上外延形成单晶层。
    • 8. 发明授权
    • Vertical boat and a method for making the same
    • 垂直船和制作相同的方法
    • US5492229A
    • 1996-02-20
    • US151386
    • 1993-11-12
    • Takashi TanakaJun YoshikawaEiichi ToyaAtsuo KitazawaKazunori MeguroTatsuo NozawaYutaka IshizukaYoshiyuki WatanabeMasaru SeinoHideo Nakanishi
    • Takashi TanakaJun YoshikawaEiichi ToyaAtsuo KitazawaKazunori MeguroTatsuo NozawaYutaka IshizukaYoshiyuki WatanabeMasaru SeinoHideo Nakanishi
    • C30B31/14H01L21/673A47F7/00
    • H01L21/67309C30B31/14
    • A vertical boat for holding a plurality of semiconductor wafers comprising two end members (2) positioned at the top and the bottom of the vertical boat, and a plurality of support members (3,4,5,6,104) vertically mounted on the end members (2) for supporting the wafers, wherein each support member (3,4,5,6,104) is formed by a plate-like member having a series of slits (9,10,7,8,108) formed thereon in such a manner that a plurality of support arms are defined by the slits (9,10,7,8,108) at a predetermined interval, each support arm having a support projection (11,12,13,14,112) formed at the end thereof, and wherein the inner portions (P) of the wafer (1) is to be supported by the support projections (11,12,13,14,112) whereas the periphery of the wafer (1) does not contact the arms of the support members (3,4,5,6,104). The slits can be formed in two steps: forming a series of first slit portions on the plate-like member at a predetermined interval so as to retain two side walls of the plate-like member; and forming a series of second small slit portions on one of the side walls at the same interval so as to connect each second slit portion to the corresponding first slit portion.
    • 一种用于保持多个半导体晶片的垂直船,包括位于垂直船的顶部和底部的两个端部构件(2)和垂直安装在端部构件上的多个支撑构件(3,4,5,6,104) (2),用于支撑晶片,其中每个支撑构件(3,4,5,6,104)由其上形成有一系列狭缝(9,10,7,8,108)的板状构件形成,其方式使得 多个支撑臂由狭缝(9,10,7,8,108)以预定的间隔限定,每个支撑臂具有在其端部形成的支撑突起(11,12,13,14,112),并且其中内部 晶片(1)的部分(P)将由支撑突起(11,12,13,14,112)支撑,而晶片(1)的周边不与支撑部件(3,4)的臂接触, 5,6,104)。 狭缝可以分成两个步骤:以预定间隔在板状构件上形成一系列第一狭缝部分,以便保持板状构件的两个侧壁; 并且在一个侧壁上以相同的间隔形成一系列第二小狭缝部分,以将每个第二狭缝部分连接到相应的第一狭缝部分。