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    • 3. 发明申请
    • METHOD OF MANUFACTURING A DISCRETE TRACK MEDIUM TYPE PERPENDICULAR MAGNETIC RECORDING MEDIUM
    • 离散轨道中型磁记录介质的制造方法
    • US20110048628A1
    • 2011-03-03
    • US12854096
    • 2010-08-10
    • Akira SATO
    • Akira SATO
    • B32B38/10
    • B32B38/10B32B37/02B32B2309/105B32B2429/02G11B5/855Y10T156/1052
    • A method of manufacturing a discrete track medium type perpendicular magnetic recording layer with reduced magnetic interference between tracks and enhanced magnetic recording density is disclosed in which protruding parts of a pattern of protrusions and recesses provided in a composite magnetic recording layer are formed in high quality having a similar film thickness and equivalent perpendicular magnetic recording performance to a perpendicular magnetic recording layer designed for a continuous film type medium. The method includes a first step of laminating at least a magnetic recording layer, a sacrifice layer, and a carbon protective layer on a nonmagnetic substrate in this order; a second step of selectively removing the resist film and the carbon protective layer at openings for forming recessed parts using a mask of a resist film pattern formed concentric to form protruding parts for constructing recording tracks; a third step of modifying the sacrifice layer and the magnetic recording layer exposing at the recessed parts into a nonmagnetic state; a fourth step of removing the resist film, the carbon protective layer, and the sacrifice layer at the protruding parts between the recessed parts; and a fifth step of depositing a carbon protective layer and a lubricant layer in this order on the recessed parts and the protruding parts.
    • 公开了一种制造具有磁道和磁记录密度之间的磁干扰减小的离散轨道介质型垂直磁记录层的方法,其中设置在复合磁记录层中的突起和凹陷图案的突出部分以高质量形成, 对于连续膜型介质设计的垂直磁记录层具有相似的膜厚度和等效的垂直磁记录性能。 该方法包括:依次层叠至少磁性记录层,牺牲层和碳保护层的第一步骤; 使用同心形成的抗蚀剂膜图案的掩模来形成凹部的开口处选择性地去除抗蚀剂膜和碳保护层的第二步骤,以形成用于构建记录轨道的突出部分; 将牺牲层和在所述凹陷部暴露的磁记录层修改为非磁性状态的第三步骤; 在凹部之间的突出部分除去抗蚀剂膜,碳保护层和牺牲层的第四步骤; 以及在凹部和突出部上依次沉积碳保护层和润滑剂层的第五步骤。
    • 8. 发明申请
    • Analysis method of vibrational spectra
    • 振动光谱分析方法
    • US20120065899A1
    • 2012-03-15
    • US13032145
    • 2011-02-22
    • Akira SATOTakeshi WATANABEShinichi TAKIMOTO
    • Akira SATOTakeshi WATANABEShinichi TAKIMOTO
    • G06F19/00
    • G01N21/65G01N2021/653G01N2201/1293
    • A plurality of Raman spectral datasets of an unknown sample acquired under the same measurement conditions is selected in a plurality of Raman spectral data items having different spectral profiles acquired by setting different measurement conditions in a plurality of unknown mixed samples, a spectrum acquired under the same measurement conditions as those of the Raman spectral dataset of the unknown sample is selected in the spectra of the benchmark molecule to be classified, a PCA loading is calculated from the Raman spectral dataset of the unknown sample, the correlation between the calculated PCA loading and the selected spectrum of the benchmark molecule to be classified is calculated, and the PCA loading having a highest correlation with the spectrum of the benchmark molecule to be classified is determined in the PCA loadings calculated from a plurality of Raman spectral datasets of the unknown sample having different measurement conditions.
    • 在相同测量条件下获取的未知样本的多个拉曼光谱数据集在具有不同光谱分布的多个拉曼光谱数据项中选择,该数据项通过在多个未知混合样本中设置不同的测量条件而获得, 在待分类的基准分子的光谱中选择未知样品的拉曼光谱数据集的测量条件,从未知样品的拉曼光谱数据集计算PCA负载,计算的PCA负载与 计算要分类的基准分子的选定光谱,并且在从具有不同样品的未知样品的多个拉曼光谱数据集计算的PCA载量中确定与要分类的基准分子的光谱相关性最高的PCA载量 测量条件。
    • 10. 发明申请
    • MEMS RESONATOR AND MANUFACTURING METHOD OF THE SAME
    • MEMS谐振器及其制造方法
    • US20080142912A1
    • 2008-06-19
    • US11928519
    • 2007-10-30
    • Shogo INABAAkira SATOToru WATANABETakeshi MORI
    • Shogo INABAAkira SATOToru WATANABETakeshi MORI
    • H03H9/02H01L21/8228
    • H03H3/0073H03H9/1057Y10S977/721
    • A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
    • 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括:使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。