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    • 1. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    • 半导体集成电路设备
    • US20080238632A1
    • 2008-10-02
    • US12057671
    • 2008-03-28
    • Takefumi ENDOTakayuki Tsukamoto
    • Takefumi ENDOTakayuki Tsukamoto
    • H04B7/00
    • H04B5/02H04B5/0031H04B5/0037
    • In an IC tag, when a semiconductor integrated circuit device is activated, an operation control unit sets existence/nonexistence of a communication distance limitation for reducing a communication distance to a state management unit. If the communication distance limitation is not set, a switch unit is turned ON and a demodulated command is inputted from a command demodulation circuit to a command decode unit. If the communication distance limitation is set, a power intensity monitor unit judges whether the power of a rectification circuit is a predetermined arbitrary field intensity or more. If the power is smaller than the predetermined arbitrary field intensity, the switch unit is turned OFF and various commands demodulated by the command demodulation circuit are not inputted to the command decode unit. As a result, the semiconductor integrated circuit device does not operate.
    • 在IC标签中,当半导体集成电路器件被激活时,操作控制单元设置存在/不存在通信距离限制,以减少与状态管理单元的通信距离。 如果没有设定通信距离限制,则开关单元被接通,并且解调命令从命令解调电路输入到命令解码单元。 如果设置了通信距离限制,则功率强度监视单元判定整流电路的功率是否为预定的任意场强度以上。 如果功率小于预定的任意场强,则切换单元关闭,并且由命令解调电路解调的各种命令不被输入到命令解码单元。 结果,半导体集成电路器件不工作。
    • 3. 发明申请
    • BACK-SIDE ILLUMINATED SOLID-STATE IMAGING DEVICE
    • 背面照明的固态成像装置
    • US20120085888A1
    • 2012-04-12
    • US13239628
    • 2011-09-22
    • Takefumi ENDOShinji KOMORINarumi SAKASHITA
    • Takefumi ENDOShinji KOMORINarumi SAKASHITA
    • H01L27/146H01L31/119
    • H01L27/1464H01L27/14609H01L27/14623H01L27/14641
    • A back-side illuminated solid-state imaging device includes a photodiode and MOS transistors at a semiconductor substrate. The MOS transistors are formed over the front surface of the semiconductor substrate. The photodiode responds to an incident light applied to the back surface opposite to the front surface of the semiconductor substrate. A charge storing portion, and a first and second transfer gates are formed over the main part of the photodiode and the front surface of the semiconductor substrate located above the vicinity of the main part so as to achieve the global shutter function. Since the irradiation light is incident on the photodiode from the back surface of the semiconductor substrate in back-side illuminated solid-state imaging device, the sensitivity of the photodiode is not reduced even when the first and second transfer gates, and the charge storing portion are formed to achieve the global shutter function.
    • 背面照明固体摄像器件包括在半导体衬底处的光电二极管和MOS晶体管。 MOS晶体管形成在半导体衬底的前表面上。 光电二极管响应于施加到与半导体衬底的前表面相对的背表面的入射光。 在光电二极管的主要部分和位于主要部分附近的半导体衬底的前表面上形成电荷存储部分和第一和第二传输门,以实现全局快门功能。 由于照射光从背面照明固态成像装置的半导体衬底的背面入射到光电二极管上,所以即使当第一和第二传输门和电荷存储部分 形成以实现全局快门功能。