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1. 发明申请

US20080075910A1 OPTICAL INFORMATION RECORDING MEDIA WITH EXCELLENT DURABILITY 审中-公开
标题翻译：光学信息记录介质具有极佳的耐久性
公开(公告)号：US20080075910A1
公开(公告)日：2008-03-27
申请号：US11830150
申请日：2007-07-30
申请人： Takeshi OHWAKI , Takayuki Tsubota , Hideo Fujii
发明人： Takeshi OHWAKI , Takayuki Tsubota , Hideo Fujii
IPC分类号： B32B3/02
CPC分类号： B32B7/12 , B32B27/36 , G11B7/252 , G11B7/259
摘要： Disclosed is an optical information recording medium which includes at least one substrate, at least one thin film of silver or a silver alloy, and an ultraviolet-cured resin layer, in which the at least one thin film and the ultraviolet-cured resin layer are in contact with each other and are arranged on or above the at least one substrate. In the recording medium, the ultraviolet-cured resin layer contains a cured resin of at least one acrylic monomer cured by the action of ultraviolet rays, and this ultraviolet-cured resin layer has a content of a resin-derived organic component of 99 percent by mass or more and has a surface electrical resistance of 2.0×1013Ω or more.
摘要翻译：公开了一种光学信息记录介质，其包括至少一个基板，至少一个银或银合金薄膜和紫外线固化树脂层，其中至少一个薄膜和紫外线固化树脂层是彼此接触并布置在至少一个基板上或上方。在记录介质中，紫外线固化树脂层含有通过紫外线固化的至少一种丙烯酸类单体的固化树脂，该紫外线固化树脂层的树脂衍生的有机成分的含量为99％质量以上，表面电阻为2.0×10 13Ω以上。

2. 发明授权

US08092889B2 Silver alloy reflective film for optical information storage media, optical information storage medium, and sputtering target for the deposition of silver alloy reflective film for optical information storage media 有权
标题翻译：用于光学信息存储介质的银合金反射膜，光学信息存储介质和用于光学信息存储介质的银合金反射膜沉积的溅射靶
公开(公告)号：US08092889B2
公开(公告)日：2012-01-10
申请号：US12438964
申请日：2007-08-28
申请人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
发明人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
IPC分类号： B32B3/02
CPC分类号： G11B7/259 , Y10T428/21
摘要： A silver alloy reflective film for optical information storage media, which can maintain superior environmental resistance, such as high hygrothermal resistance and high light stability, over the long term even when the metal reflective film is in direct contact with a resin layer. An optical information storage medium includes the reflective film and a sputtering target deposits the reflective film. The silver alloy reflective film includes one or more specific elements selected from Pr, Ho, Yb, Sm, Er, Tm, and Tb, to suppress deterioration occurring when the silver alloy reflective film is in direct contact with a resin layer, where silver in the reflective film migrates and aggregates into the adjacent resin layer.
摘要翻译：即使在金属反射膜与树脂层直接接触的情况下，也可以长时间地保持耐高温性，高耐光性等优异的耐环境性的光学信息存储介质用银合金反射膜。光学信息存储介质包括反射膜，溅射靶沉积反射膜。银合金反射膜包括选自Pr，Ho，Yb，Sm，Er，Tm和Tb中的一种或多种特定元素，以抑制当银合金反射膜与树脂层直接接触时发生的劣化，其中银反射膜迁移并聚集成相邻的树脂层。

3. 发明申请

US20080131308A1 AG ALLOY REFLECTIVE LAYER FOR OPTICAL INFORMATION RECORDING MEDIUM, OPTICAL INFORMATION RECORDING MEDIUM, AND SPUTTERING TARGET FOR FORMING AG ALLOY REFLECTIVE LAYER FOR OPTICAL INFORMATION RECORDING MEDIUM 失效
标题翻译：用于光信息记录介质的AG合金反射层，光信息记录介质和用于形成用于光信息记录介质的合金反射层的溅射目标
公开(公告)号：US20080131308A1
公开(公告)日：2008-06-05
申请号：US11947170
申请日：2007-11-29
申请人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
发明人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
IPC分类号： C22C5/06
CPC分类号： C22C5/06 , C23C14/205 , C23C14/3414 , Y10T428/21
摘要： An Ag alloy reflective layer for optical information recording medium having excellent environmental resistance, an optical information recording medium having such Ag alloy reflective layer, and the like are provided. This Ag alloy reflective layer for an optical information includes 0.1 to 5 atomic % in total of at least one element selected from W, Ti, V, Mn, Zr, Cr, and Ni; 0.005 to 1 atomic % of Bi; and the residue of Ag and inevitable impurities. As a consequence, this Ag alloy reflective layer has improved environmental resistance including the light resistance for the light beam of particular wavelength and resistance to moist heat under particular set of conditions.
摘要翻译：提供了具有优异耐环境性的光学信息记录介质的Ag合金反射层，具有这种Ag合金反射层的光学信息记录介质等。该用于光学信息的Ag合金反射层总共包含从W，Ti，V，Mn，Zr，Cr和Ni中选择的至少一种元素0.1至5原子％; 0.005〜1原子％的Bi; 和残留的Ag和不可避免的杂质。因此，该Ag合金反射层具有改善的环境阻力，包括特定波长的光束的耐光性和特定条件下的耐湿热性。

4. 发明授权

US07833604B2 Ag alloy reflective layer for optical information recording medium, optical information recording medium, and sputtering target for forming Ag alloy reflective layer for optical information recording medium 失效
标题翻译：用于光学信息记录介质的Ag合金反射层，光学信息记录介质和用于形成用于光学信息记录介质的Ag合金反射层的溅射靶
公开(公告)号：US07833604B2
公开(公告)日：2010-11-16
申请号：US11947170
申请日：2007-11-29
申请人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
发明人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
IPC分类号： B32B3/02
CPC分类号： C22C5/06 , C23C14/205 , C23C14/3414 , Y10T428/21
摘要： An Ag alloy reflective layer for optical information recording medium having excellent environmental resistance, an optical information recording medium having such Ag alloy reflective layer, and the like are provided. This Ag alloy reflective layer for an optical information includes 0.1 to 5 atomic % in total of at least one element selected from W, Ti, V, Mn, Zr, Cr, and Ni; 0.005 to 1 atomic % of Bi; and the residue of Ag and inevitable impurities. As a consequence, this Ag alloy reflective layer has improved environmental resistance including the light resistance for the light beam of particular wavelength and resistance to moist heat under particular set of conditions.
摘要翻译：提供了具有优异耐环境性的光学信息记录介质的Ag合金反射层，具有这种Ag合金反射层的光学信息记录介质等。该用于光学信息的Ag合金反射层总共包含从W，Ti，V，Mn，Zr，Cr和Ni中选择的至少一种元素0.1至5原子％; 0.005〜1原子％的Bi; 和残留的Ag和不可避免的杂质。因此，该Ag合金反射层具有改善的环境阻力，包括特定波长的光束的耐光性和特定条件下的耐湿热性。

5. 发明申请

US20100015381A1 SILVER ALLOY REFLECTIVE FILM FOR OPTICAL INFORMATION STORAGE MEDIA, OPTICAL INFORMATION STORAGE MEDIUM, AND SPUTTERING TARGET FOR THE DEPOSITION OF SILVER ALLOY REFLECTIVE FILM FOR OPTICAL INFORMATION STORAGE MEDIA 有权
标题翻译：用于光信息存储介质的银合金反射膜，光学信息存储介质和用于光信息存储介质的银合金反射膜沉积的溅射目标
公开(公告)号：US20100015381A1
公开(公告)日：2010-01-21
申请号：US12438964
申请日：2007-08-28
申请人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
发明人： Takayuki Tsubota , Takeshi Ohwaki , Hideo Fujii
IPC分类号： G11B7/246 , G11B7/241 , C22C5/06 , C22C5/08
CPC分类号： G11B7/259 , Y10T428/21
摘要： A silver alloy reflective film for optical information storage media, which can maintain superior environmental resistance, such as high hygrothermal resistance and high light stability, over the long term even when the metal reflective film is in direct contact with a resin layer. An optical information storage medium includes the reflective film and a sputtering target deposits the reflective film. The silver alloy reflective film includes one or more specific elements selected from Pr, Ho, Yb, Sm, Er, Tm, and Tb, to suppress deterioration occurring when the silver alloy reflective film is in direct contact with a resin layer, where silver in the reflective film migrates and aggregates into the adjacent resin layer.
摘要翻译：即使在金属反射膜与树脂层直接接触的情况下，也可以长时间地保持耐高温性，高耐光性等优异的耐环境性的光学信息存储介质用银合金反射膜。光学信息存储介质包括反射膜，溅射靶沉积反射膜。银合金反射膜包括选自Pr，Ho，Yb，Sm，Er，Tm和Tb中的一种或多种特定元素，以抑制当银合金反射膜与树脂层直接接触时发生的劣化，其中银反射膜迁移并聚集成相邻的树脂层。

6. 发明授权

US08367200B2 Reflecting film excellent in cohesion resistance and sulfur resistance 有权
标题翻译：反射膜具有优异的内聚力和耐硫性
公开(公告)号：US08367200B2
公开(公告)日：2013-02-05
申请号：US11962942
申请日：2007-12-21
申请人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
发明人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
IPC分类号： B32B15/00
CPC分类号： C23C28/00 , B05D1/62 , Y10T428/265
摘要： A reflecting film including: an Ag or Ag-base alloy thin film of an Ag-base alloy containing at least one element among Au, Pt, Pd, Bi, and rare-earth elements as a first layer; a film of an oxide or oxynitride of at least one element among Si, Al and Ti having a thickness between 5 and 50 nm as a second layer deposited on the first layer; and a film having a thickness between 10 and 100 nm formed by a plasma polymerization process as a third layer deposited on the second layer.
摘要翻译：一种反射膜，包括：作为第一层的包含Au，Pt，Pd，Bi和稀土元素中的至少一种元素的Ag基合金的Ag或Ag基合金薄膜; Si，Al和Ti中的至少一种元素的氧化物或氧氮化物的膜，其厚度为5至50nm，作为沉积在第一层上的第二层; 以及通过等离子体聚合方法形成的厚度在10和100nm之间的膜作为沉积在第二层上的第三层。

7. 发明申请

US20090233113A1 ALUMINUM MEMBER OR ALUMINUM ALLOY MEMBER WITH EXCELLENT CORROSION RESISTANCE 审中-公开
标题翻译：铝构件或铝合金构件具有优异的耐腐蚀性
公开(公告)号：US20090233113A1
公开(公告)日：2009-09-17
申请号：US12090552
申请日：2006-11-13
申请人： Jun Hisamoto , Koji Wada , Takayuki Tsubota
发明人： Jun Hisamoto , Koji Wada , Takayuki Tsubota
IPC分类号： B32B15/04
CPC分类号： C25D11/08
摘要： To provide an aluminum alloy or aluminum member having an anodic oxide coating formed thereon, the coating having excellent resistance to gaseous corrosion and resistance to plasma and excellent adhesion, and a member for a vacuum apparatus formed of such an aluminum alloy or aluminum member having excellent corrosion resistance. Moreover, a member having a sufficient voltage resistance is provided to stably keep a plasma state in a process using plasma.The object is substantialized by providing the following: (1) An aluminum alloy or aluminum member, wherein the anodic oxide coating has impedance of at least 107Ω at a frequency of 10−2 Hz, and hardness of at least 400 in Vickers hardness (Hv); or (2) An aluminum alloy or aluminum member, wherein the anodic oxide coating has impedance of at least 108Ω at a frequency of 10−2 Hz, and hardness of at least 350 in Vickers hardness (Hv).
摘要翻译：为了提供其上形成有阳极氧化物涂层的铝合金或铝构件，该涂层具有优异的耐气体腐蚀性和耐等离子体性以及优异的粘合性，以及由这种铝合金或铝构件形成的真空装置的构件耐腐蚀性能。此外，提供具有足够的耐电压性的部件以在使用等离子体的工艺中稳定地保持等离子体状态。该目的通过提供以下方式实现：（1）一种铝合金或铝构件，其中阳极氧化物涂层的阻抗在10-2Hz的频率下至少为107Ohm，维氏硬度（Hv）的硬度至少为400 ）; 或（2）铝合金或铝构件，其中所述阳极氧化物涂层在10-2Hz的频率下具有至少108Ohm的阻抗，并且维氏硬度（Hv）的硬度至少为350。

8. 发明申请

US20080171196A1 REFLECTING FILM EXCELLENT IN COHESION RESISTANCE AND SULFUR RESISTANCE 有权
标题翻译：反射膜具有优异的耐电弧性和耐硫性
公开(公告)号：US20080171196A1
公开(公告)日：2008-07-17
申请号：US11962942
申请日：2007-12-21
申请人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
发明人： Toshiki Sato , Jun Suzuki , Shinichi Tanifuji , Takayuki Tsubota , Yoshinori Ito
IPC分类号： B32B15/00
CPC分类号： C23C28/00 , B05D1/62 , Y10T428/265
摘要： Disclosed is a reflecting film comprising: an Ag or Ag-base alloy thin film of an Ag-base alloy containing at least one element among Au, Pt, Pd, Bi, and rare-earth elements as a first layer; a film of an oxide or oxynitride of at least one element among Si, Al and Ti having a thickness between 5 and 50 nm as a second layer deposited on the first layer; and a film having a thickness between 10 and 100 nm formed by a plasma polymerization process as a third layer deposited on the second layer.
摘要翻译：公开了一种反射膜，其包括：作为第一层的包含Au，Pt，Pd，Bi和稀土元素中的至少一种元素的Ag基合金的Ag或Ag基合金薄膜; Si，Al和Ti中的至少一种元素的氧化物或氧氮化物的膜，其厚度为5至50nm，作为沉积在第一层上的第二层; 以及通过等离子体聚合方法形成的厚度在10和100nm之间的膜作为沉积在第二层上的第三层。

9. 发明授权

US08399100B2 Reflection film, reflection film laminate, LED, organic EL display, and organic EL illuminating instrument 有权
标题翻译：反射膜，反射膜层压板，LED，有机EL显示器和有机EL照明仪器
公开(公告)号：US08399100B2
公开(公告)日：2013-03-19
申请号：US12679633
申请日：2008-09-25
申请人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
发明人： Jun Suzuki , Toshiki Sato , Takayuki Tsubota , Shinichi Tanifuji
IPC分类号： B32B17/06 , B32B27/36 , B32B15/04
CPC分类号： G02B5/0858 , C23C14/14 , C23C14/165 , F21S41/37 , F21V7/22 , G02B5/0808 , G02B5/085 , H01L51/5203 , H01L51/5271 , H05B33/26 , Y10T428/12896 , Y10T428/265 , Y10T428/31507 , Y10T428/31678
摘要： The present invention provides a reflection film, a reflection film laminate which are less likely to undergo agglomeration or sulfidation of an Ag thin film due to heat, and a LED, an organic EL display, and an organic EL illuminating instrument, each including any of these. The reflection film in accordance with the present invention is a reflection film formed on a substrate, characterized by being an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the following expression (1): 7×[A]+13×[Bi]≦8 (1) where [A] (atomic percent) denotes the content of one or more of the V, Ge, and Zn, and [Bi] (atomic percent) denotes the content of Bi. Whereas, a reflection film laminate in accordance with the present invention is a reflection film laminate formed on a substrate, characterized by including: a first film comprising an Ag alloy film including Ag as a main component, and Bi in an amount of 0.02 atomic percent or more, and further including one or more of V, Ge, and Zn in a total content of 0.02 atomic percent or more, and satisfying the expression (1); and a second film including a Si oxide formed on the first film.
摘要翻译：本发明提供一种反射膜，由于热而不易发生Ag薄膜的聚集或硫化的反射膜层叠体，以及LED，有机EL显示器和有机EL照明器具，其分别包括这些。根据本发明的反射膜是形成在基板上的反射膜，其特征在于包括Ag作为主要成分的Ag合金膜，以及0.02原子％以上的Bi，并且还包括一个或多个（A）+ 13×[Bi]＆nlE; 8（1）其中[A]（原子数）为10原子％以上，满足下式（1）：V，Ge，百分比）表示V，Ge和Zn中的一种或多种的含量，[Bi]（原子百分比）表示Bi的含量。而根据本发明的反射膜层叠体是在基板上形成的反射膜层压体，其特征在于，包括：第一膜，包括以Ag为主要成分的Ag合金膜，以及0.02原子％的Bi 以上，进一步包含总量为0.02原子％以上的V，Ge，Zn中的一种以上，满足式（1）。以及形成在第一膜上的包含Si氧化物的第二膜。

10. 发明申请

US20120318674A1 METHOD FOR FORMATION OF ANODE OXIDE FILM 有权
标题翻译：形成阳极氧化膜的方法
公开(公告)号：US20120318674A1
公开(公告)日：2012-12-20
申请号：US13581086
申请日：2011-02-23
申请人： Koji Wada , Mamoru Hosokawa , Takayuki Tsubota , Jun Hisamoto
发明人： Koji Wada , Mamoru Hosokawa , Takayuki Tsubota , Jun Hisamoto
IPC分类号： C25D5/18 , C25D11/16 , C25D11/18 , C25D11/04
CPC分类号： C25D11/04 , C25D11/024 , C25D11/08 , C25D11/16 , C25D11/18 , C25D11/246 , C25D21/12
摘要： The present invention provides a method for forming an anode oxide film, in which on the assumption that a direct-current power source is used, a thick anode oxide film can be formed with good productivity within a short time without using special equipment. The method includes allowing a current A0 to pass through an aluminum base material, and includes a step of repeating a first electricity cut-off treatment multiple times, in which when a voltage reaches a voltage V1 during the formation of the film, the passage of electricity is once cut off, this electricity cut-off is continued for a period equal to or longer than an electricity cut-off time T1, and the passage of electricity is then resumed, wherein the voltage V1 and electricity cut-off time T1 satisfy the prescribed expressions.
摘要翻译：本发明提供了一种形成阳极氧化膜的方法，其中假设使用直流电源时，可以在短时间内以高生产率形成厚阳极氧化膜而不使用特殊设备。该方法包括使电流A0通过铝基材料，并且包括多次重复第一次断电处理的步骤，其中当膜形成期间电压达到电压V1时，通过电一旦被切断，该断电持续时间等于或长于断电时间T1，然后恢复通电，其中电压V1和断电时间T1满足规定的表达。

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