专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6162412A Chemical vapor deposition method of high quality diamond 失效
标题翻译：高品质钻石的化学气相沉积方法
公开(公告)号：US6162412A
公开(公告)日：2000-12-19
申请号：US115783
申请日：1993-09-03
申请人： Naoji Fujimori , Akihiko Ikegaya , Takahiro Imai , Nobuhiro Ota , Takayuki Shibata
发明人： Naoji Fujimori , Akihiko Ikegaya , Takahiro Imai , Nobuhiro Ota , Takayuki Shibata
IPC分类号： C23C16/27
CPC分类号： C23C16/277 , C23C16/271
摘要： Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:.alpha.=B.times.(A-1.2C) (I)provided that a is not larger than 13, or B is not larger than 20.
摘要翻译：通过CVD法制备具有大的导热系数的金刚石，其中反应气体在相对于氢气（A％）的碳原子浓度，氮气浓度相对于整个反应气体（B ppm）和氧原子相对于氢气的浓度（C％）满足以下等式：α= Bx（A-1.2C）（I），条件是a不大于13，或 B不大于20。

2. 发明授权

US5201986A Diamond synthesizing method 失效
标题翻译：金刚石合成方法
公开(公告)号：US5201986A
公开(公告)日：1993-04-13
申请号：US739995
申请日：1991-08-02
申请人： Nobuhiro Ota , Naoji Fujimori , Takayuki Shibata
发明人： Nobuhiro Ota , Naoji Fujimori , Takayuki Shibata
IPC分类号： C23C16/27 , C23C16/52
CPC分类号： C23C16/272 , C23C16/52
摘要： A diamond synthesizing method introduces a mixed gas of hydrocarbon gas and hydrogen gas into a reaction vessel (9) which is maintained under a pressure of 1 to 100 Torr. A dc discharge is caused across a cathode (1) and an anode (2), thereby depositing diamond on a substrate (3) which is placed on the anode (2). A positive column of H.alpha.>CH is produced with a high formation rate of atomic hydrogen for promoting decomposition of the hydrocarbon gas, and the concentration of hydrocarbon is reduced while maintaining the condition. According to this method, it is possible to synthesize high-quality diamond, which hardly any non-diamond carbon components such as amorphous carbon and graphite, at a film forming rate of about 1 .mu.m/h.

3. 发明授权

US5391409A Low temperature method for synthesizing diamond with high quality by vapor phase deposition 失效
标题翻译：通过气相沉积合成高品质金刚石的低温方法
公开(公告)号：US5391409A
公开(公告)日：1995-02-21
申请号：US861540
申请日：1992-04-01
申请人： Takayuki Shibata , Nobuhiro Ota , Naoji Fujimori
发明人： Takayuki Shibata , Nobuhiro Ota , Naoji Fujimori
IPC分类号： C30B25/16 , C23C16/27 , C30B25/10 , C30B29/04 , B05D3/06 , C23C16/26
CPC分类号： C23C16/274 , C23C16/278 , C30B25/105 , Y10S427/106
摘要： A diamond film deposited on a substrate heated at less than 400.degree. C. in vapor phase from material gas including hydrogen gas and hydrocarbon gas often incurs low strength, low abrasion resistance, and opacity owing to high concentration of non-diamond ingredients. The inventors have discovered that inclusion of nitrogen gas in material gas is likely to raise the concentration of non-diamond ingredients. Good diamond film of good quality shall be obtained by synthesizing from the material gas in which the nitrogen concentration is less than 1000 ppm. The smaller the nitrogen concentration is suppressed, the higher the quality of diamond rises.
摘要翻译：由于高浓度的非金刚石成分，沉积在包含氢气和碳氢化合物气体的材料气体中在气相中加热到低于400℃的基体上的金刚石膜通常会产生低强度，低耐磨性和不透明度。发明人已经发现，在原料气体中包含氮气有可能提高非金刚石成分的浓度。通过从氮浓度小于1000ppm的原料气体合成，可获得质量好的金刚石薄膜。氮浓度越低，钻石质量越高。

4. 发明授权

US5657365A X-ray generation apparatus 失效
标题翻译： X射线发生装置
公开(公告)号：US5657365A
公开(公告)日：1997-08-12
申请号：US515096
申请日：1995-08-14
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
IPC分类号： G21K5/08 , H01J35/08 , H05G1/00 , H05G1/02
CPC分类号： H01J35/08 , H01J2235/087 , H01J2235/122 , H01J2235/1262
摘要： An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target of generating X-ray by irradiation of electron. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
摘要翻译： X射线产生装置具有抗热阴极，其包括高导热性基板和通过电子照射产生X射线的靶。目标穿透高导热基板。获得了改善的抗阴茎的冷却效率和耐久性，并且实现了X射线产生装置的小型化和简化。

5. 发明授权

US5450434A Method to work cubic boron nitride article 失效
标题翻译：立方氮化硼制品的加工方法
公开(公告)号：US5450434A
公开(公告)日：1995-09-12
申请号：US66243
申请日：1993-05-25
申请人： Nobuhiro Ota , Naoji Fujimori
发明人： Nobuhiro Ota , Naoji Fujimori
IPC分类号： B23K26/00 , B23K26/06 , B23K26/40 , C01B21/064 , C04B41/00 , C04B41/80 , H01S3/225
CPC分类号： C04B41/009 , B23K26/40 , C04B41/0036 , C04B41/80 , B23K2203/52
摘要： The present invention provides a method for cutting or smoothing an article containing cubic boron nitride. In particular, the method comprises the step of irradiating a beam having a wavelength of not longer than 360 nm to the cubic boron nitride article so that the article is cut or smoothed quickly and with high accuracy.
摘要翻译：本发明提供一种用于切割或平滑含有立方氮化硼的制品的方法。特别地，该方法包括将立方氮化硼制品的波长不大于360nm的光束照射的步骤，使得物品能够快速且准确地切割或平滑。

6. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

7. 发明授权

US5788766A Window and preparation thereof 失效
标题翻译：窗口及其准备
公开(公告)号：US5788766A
公开(公告)日：1998-08-04
申请号：US565595
申请日：1995-11-30
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Takashi Tsuno , Nobuhiro Ota , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Katsuko Harano , Takashi Tsuno , Nobuhiro Ota , Naoji Fujimori
IPC分类号： G21K1/10 , H01J35/18 , H01L23/473 , H01S5/02 , H01S5/024 , H05H7/00 , C30B29/05
CPC分类号： H01J35/18 , G21K1/10 , H01L23/473 , H05H7/00 , G21K2201/065 , H01J2235/122 , H01J2235/1262 , H01L2924/0002
摘要： A window material, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property and a high transmittance.
摘要翻译：具有导热率至少为10W / cm×KK的高导热性材料层，并且在高导热性材料层上或其上具有冷却介质流路的窗材料具有高的散热性和透光率高。

8. 发明授权

US5436036A Method of synthesizing hard material 失效
标题翻译：硬质材料的合成方法
公开(公告)号：US5436036A
公开(公告)日：1995-07-25
申请号：US79105
申请日：1993-06-17
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511 , B05D3/06
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.
摘要翻译：气相合成硬质材料的方法使用供给反应管（6）的原料气体，同时用规定频率的微波（18）向反应管（6）的区域照射，从而产生合成反应通过等离子体产生沿规定方向的硬质材料。在反应管（6）中，至少两个平板电极（17a，17b，19a，19b）在与微波（18）的电场垂直的方向上相互平行地排列，使得等离子体在平板电极（17a），17b，19a，19b），用于气相合成硬质材料。高功率的微波（18）通过波导（5）而不损耗地引入反应管（6），使得强电场能够均匀稳定地分布在相对的板电极之间。

9. 发明授权

US5878110A X-ray generation apparatus 失效
标题翻译： X射线发生装置
公开(公告)号：US5878110A
公开(公告)日：1999-03-02
申请号：US907883
申请日：1997-08-11
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
IPC分类号： H01J35/08 , H05G1/00
CPC分类号： H01J35/08 , H01J2235/087 , H01J2235/122 , H01J2235/1262
摘要： An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target for generating X-rays by irradiation with electrons. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
摘要翻译： X射线产生装置具有抗热阴极，其包括高导热性基板和通过照射电子而产生X射线的靶。目标穿透高导热基板。获得了改善的抗阴茎的冷却效率和耐久性，并且实现了X射线产生装置的小型化和简化。

10. 发明授权

US5330968A Laser ablation process for preparing oxide superconducting thin films 失效
标题翻译：用于制备氧化物超导薄膜的激光烧蚀工艺
公开(公告)号：US5330968A
公开(公告)日：1994-07-19
申请号：US897668
申请日：1992-06-12
申请人： Tatsuoki Nagaishi , Nobuhiro Ota , Naoji Fujimori
发明人： Tatsuoki Nagaishi , Nobuhiro Ota , Naoji Fujimori
IPC分类号： C23C14/08 , C23C14/06 , C23C14/24 , C23C14/28 , C30B29/22 , H01B12/06 , H01L39/24 , B05D3/06
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： A laser ablation process for preparing an oxide superconducting thin film characterized in that an electrode is arranged between a substrate and a target. While the film is formed by laser ablation, a bias voltage of 75-100 V is applied between the electrode and the target.
摘要翻译：一种用于制备氧化物超导薄膜的激光烧蚀工艺，其特征在于电极布置在基板和靶之间。当薄膜由激光烧蚀形成时，在电极和靶之间施加75-100V的偏置电压。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式