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1. 发明授权

US6162412A Chemical vapor deposition method of high quality diamond 失效
标题翻译：高品质钻石的化学气相沉积方法
公开(公告)号：US6162412A
公开(公告)日：2000-12-19
申请号：US115783
申请日：1993-09-03
申请人： Naoji Fujimori , Akihiko Ikegaya , Takahiro Imai , Nobuhiro Ota , Takayuki Shibata
发明人： Naoji Fujimori , Akihiko Ikegaya , Takahiro Imai , Nobuhiro Ota , Takayuki Shibata
IPC分类号： C23C16/27
CPC分类号： C23C16/277 , C23C16/271
摘要： Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:.alpha.=B.times.(A-1.2C) (I)provided that a is not larger than 13, or B is not larger than 20.
摘要翻译：通过CVD法制备具有大的导热系数的金刚石，其中反应气体在相对于氢气（A％）的碳原子浓度，氮气浓度相对于整个反应气体（B ppm）和氧原子相对于氢气的浓度（C％）满足以下等式：α= Bx（A-1.2C）（I），条件是a不大于13，或 B不大于20。

2. 发明授权

US5197651A Bonding tool 失效
标题翻译：连接工具
公开(公告)号：US5197651A
公开(公告)日：1993-03-30
申请号：US573062
申请日：1990-08-24
申请人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
发明人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
IPC分类号： C04B41/50 , C04B41/85
CPC分类号： C04B41/009 , C04B41/5002 , C04B41/85 , H01L24/75 , H01L2924/12033 , H01L2924/351
摘要： A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.

3. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

4. 发明授权

US5436036A Method of synthesizing hard material 失效
标题翻译：硬质材料的合成方法
公开(公告)号：US5436036A
公开(公告)日：1995-07-25
申请号：US79105
申请日：1993-06-17
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511 , B05D3/06
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.
摘要翻译：气相合成硬质材料的方法使用供给反应管（6）的原料气体，同时用规定频率的微波（18）向反应管（6）的区域照射，从而产生合成反应通过等离子体产生沿规定方向的硬质材料。在反应管（6）中，至少两个平板电极（17a，17b，19a，19b）在与微波（18）的电场垂直的方向上相互平行地排列，使得等离子体在平板电极（17a），17b，19a，19b），用于气相合成硬质材料。高功率的微波（18）通过波导（5）而不损耗地引入反应管（6），使得强电场能够均匀稳定地分布在相对的板电极之间。

5. 发明授权

US6028020A Single crystal quartz thin film and preparation thereof 失效
标题翻译：单晶石英薄膜及其制备
公开(公告)号：US6028020A
公开(公告)日：2000-02-22
申请号：US567530
申请日：1995-12-05
申请人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
发明人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B5/00 , H03H3/02 , H03H9/19 , C03C10/12 , B05D3/02
CPC分类号： H03H9/19 , C30B29/18 , C30B5/00
摘要： A single crystal quartz thin film having a thickness of 5 nm to 50 .mu.m can be prepared by forming the thin film on a single crystal substrate by a sol-gel process and peeling the thin film from the substrate. The present invention can provide the single crystal quartz thin film at a low price without a large and complex apparatus.
摘要翻译：通过溶胶 - 凝胶法在单晶基板上形成薄膜，并从基板剥离薄膜，可以制备厚度为5nm〜50μm的单晶石英薄膜。本发明可以以低价格提供单晶石英薄膜而不需要大而复杂的装置。

6. 发明授权

US5791045A Process for the production of a diamond heat sink 失效
标题翻译：生产金刚石散热器的工艺
公开(公告)号：US5791045A
公开(公告)日：1998-08-11
申请号：US819440
申请日：1997-03-17
申请人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： H01L21/48 , H01L23/367 , H01L23/373 , B23P15/26
CPC分类号： H01L21/4882 , H01L23/3672 , H01L23/3732 , H01L2924/0002 , Y10T29/4935
摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要翻译：具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。翅片与基底组合，并且是具有至少1（W / cm×K）的热导率的材料，例如金刚石。这种散热器是通过简单的工艺生产的，其包括设置用于生长金刚石的基底材料和翅片，使得基底材料的表面和翅片的上端通过使用适当的支撑构件或者通过使基材自身工作并通过气相合成方法在其上生长金刚石。

7. 发明授权

US5677372A Diamond reinforced composite material 失效
标题翻译：金刚石增强复合材料
公开(公告)号：US5677372A
公开(公告)日：1997-10-14
申请号：US569591
申请日：1995-12-08
申请人： Yoshiyuki Yamamoto , Takahiro Imai , Takashi Tsuno , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takahiro Imai , Takashi Tsuno , Naoji Fujimori
IPC分类号： B29C70/10 , C08K9/02 , C23C16/01 , C23C16/27 , C23C16/56 , C08K3/04 , B32B5/00 , C23C16/38
CPC分类号： C23C16/274 , B29C70/10 , C08K9/02 , C23C16/01 , C23C16/56 , Y10T428/12438 , Y10T428/2933 , Y10T428/2938 , Y10T428/2942 , Y10T428/2978 , Y10T428/30
摘要： An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.
摘要翻译：金刚石纤维与至少一种有机聚合物如树脂的基质之间的改进的粘附或粘合是在用气相沉积金刚石增强的复合材料中实现的。为了改善与基质的结合，从气相沉积金刚石纤维的表面除去氢。这可以通过在氧化气氛下在约150℃至约800℃的温度下或在非氧化性气氛下在约800℃至约1500℃的温度下加热金刚石来实现。含有不大于约1×10 15 / cm 2氢原子的气相沉积金刚石的表面例如以足够的强度结合到树脂基质上。为了进一步改善结合，使用掺有B或N的金刚石作为增强材料或至少其表面层。

8. 发明授权

US5642779A Heat sink and a process for the production of the same 失效
标题翻译：散热片和生产过程相同
公开(公告)号：US5642779A
公开(公告)日：1997-07-01
申请号：US257288
申请日：1994-06-09
申请人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： H01L21/48 , H01L23/367 , H01L23/373
CPC分类号： H01L21/4882 , H01L23/3672 , H01L23/3732 , H01L2924/0002 , Y10T29/4935
摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要翻译：具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。翅片嵌入基板中，并且是具有至少1（W / cm×K）的导热率的材料，例如金刚石。这样的散热器可以通过简单的方法来制造，该方法是将基底材料和用于生长金刚石的翅片以这样一种方式制成，使得基底材料的表面和翅片的上端通过使用合适的或通过使基材本身加工并通过气相合成方法在其上生长金刚石。

9. 发明授权

US5474021A Epitaxial growth of diamond from vapor phase 失效
标题翻译：来自气相的金刚石的外延生长
公开(公告)号：US5474021A
公开(公告)日：1995-12-12
申请号：US125482
申请日：1993-09-22
申请人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B25/02 , C30B25/18 , C30B29/04
CPC分类号： C30B25/18 , C30B25/02 , C30B29/04
摘要： A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions:0.5.ltoreq.X.ltoreq.2.00.3.ltoreq.Y.ltoreq.2.0Z.ltoreq.1.0X=([C]/[H]).times.100% IY=([C]-[O]/[H]).times.100% IIZ=([O]/[H]).times.100% IIIwhere [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively. In this way it is possible to obtain vapor-deposited diamond having favorable characteristics.
摘要翻译：制备了主要由{100}平面组成的主表面的多个单晶金刚石板。金刚石板被布置成使得各个主表面彼此基本齐平。在这种布置中，相邻板之间的主表面的晶体取向形成的角度不大于5°，相邻板之间的间隙不大于30μm，并且主表面的高度差不大相邻板块之间大于30微米。为了确保这种布置，多个金刚石板通过在金属板上沉积金刚石形成单个大金刚石板而彼此接合。在这种接合之后，抛光金刚石板的主表面以消除台阶或高度差异。然后，金刚石从气相在外延生长在大金刚石板的抛光表面上。在该气相中，由下列方程式I，II和III得到的比例X，Y和Z分别满足以下条件：0.5≤X≤2.00.3

10. 发明授权

US5372799A Process for the synthesis of granular diamond 失效
标题翻译：粒状金刚石合成工艺
公开(公告)号：US5372799A
公开(公告)日：1994-12-13
申请号：US425833
申请日：1989-10-20
申请人： Tadafumi Adschiri , Junji Degawa , Takahiro Imai , Naoji Fujimori , Takehiko Furusawa, deceased
发明人： Tadafumi Adschiri , Junji Degawa , Takahiro Imai , Naoji Fujimori , Takehiko Furusawa, deceased
IPC分类号： C01B31/06 , B01J8/42 , C23C16/442 , C30B25/00 , C30B29/04 , C23C16/26 , C23C16/54
CPC分类号： C23C16/442 , B01J8/42 , C30B25/00 , C30B29/04 , B01J2219/0894
摘要： Granular diamond suitable for use as an abrasive grain for polishing is synthesized from gaseous phase by a process for the synthesis of granular diamond, comprising subjecting a mixed gas containing an organic compound and hydrogen to a treatment to form plasma and depositing diamond on substrate grains dispersed and fluidized in the resulting plasma space, characterized in that the substrate grains are dispersed and fluidized by the mixed gas fed at a flow rate of at least the terminal velocity of the grains and an AC or DC electric field is applied to a zone whose grain concentration in the space is in the range of 1 to 20% by volume.
摘要翻译：适合用作研磨磨粒的颗粒状金刚石是通过合成粒状金刚石的方法由气相合成的，包括使含有有机化合物和氢气的混合气体进行处理以形成等离子体并将金刚石沉积在分散的基质颗粒上并在所得到的等离子体空间中流化，其特征在于，通过以至少晶粒的末端速度的流量供给的混合气体使基板颗粒分散和流化，并且将AC或DC电场施加到其颗粒该空间中的浓度在1〜20体积％的范围内。

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