会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Electric discharger using semiconductor switch
    • 使用半导体开关的放电器
    • US07482786B2
    • 2009-01-27
    • US11293324
    • 2005-12-05
    • Takayuki SekiyaShoji TangeTakeshi Sakuma
    • Takayuki SekiyaShoji TangeTakeshi Sakuma
    • H01M10/46
    • H03K17/567H03K3/57
    • An electric discharger includes: an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit; and a reactor connected to output terminals of the inductor. Induced energy is stored in the inductor when the first semiconductor switch is turned on. The inductor generates a high voltage when the first semiconductor switch is turned off. The reactor is discharged under the high voltage. The reactor has a pair of electrodes, a dielectric body and a space, the dielectric body and the space being disposed between the electrodes. The first semiconductor switch is turned on again when charging of the dielectric body of the reactor under the high voltage is substantially finished.
    • 放电器包括:串联连接在直流电源单元的相对端子之间的电感器,第一半导体开关和第二半导体开关; 和连接到电感器的输出端子的电抗器。 当第一半导体开关导通时,感应能量被存储在电感器中。 当第一个半导体开关关闭时,电感器产生高电压。 电抗器在高电压下放电。 反应器具有一对电极,电介质体和空间,介电体和空间设置在电极之间。 当在高电压下的电抗器的电介质体的充电基本上完成时,第一半导体开关再次导通。
    • 2. 发明申请
    • Electric discharger
    • 放电器
    • US20060120113A1
    • 2006-06-08
    • US11293324
    • 2005-12-05
    • Takayuki SekiyaShoji TangeTakeshi Sakuma
    • Takayuki SekiyaShoji TangeTakeshi Sakuma
    • H02M3/335
    • H03K17/567H03K3/57
    • An electric discharger includes: an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit; and a reactor connected to output terminals of the inductor. Induced energy is stored in the inductor when the first semiconductor switch is turned on. The inductor generates a high voltage when the first semiconductor switch is turned off. The reactor is discharged under the high voltage. The reactor has a pair of electrodes, a dielectric body and a space, the dielectric body and the space being disposed between the electrodes. The first semiconductor switch is turned on again when charging of the dielectric body of the reactor under the high voltage is substantially finished.
    • 放电器包括:串联连接在直流电源单元的相对端子之间的电感器,第一半导体开关和第二半导体开关; 和连接到电感器的输出端子的电抗器。 当第一半导体开关导通时,感应能量被存储在电感器中。 当第一个半导体开关关闭时,电感器产生高电压。 电抗器在高电压下放电。 反应器具有一对电极,电介质体和空间,介电体和空间设置在电极之间。 当在高电压下的电抗器的电介质体的充电基本上完成时,第一半导体开关再次导通。
    • 3. 发明授权
    • Spatial light modulator element with amorphous film of germanium, carbon
and silicon for light blocking layer
    • 具有锗,碳和硅非晶膜的空间光调制元件用于遮光层
    • US5471331A
    • 1995-11-28
    • US10301
    • 1993-01-28
    • Kuniharu TakizawaHiroshi KikuchiYukihisa OsugiShoji Tange
    • Kuniharu TakizawaHiroshi KikuchiYukihisa OsugiShoji Tange
    • G02F1/135G02F1/1335
    • G02F1/135G02F2001/1351
    • A spatial light modulator includes at least a photoconductive layer, one transparent electrode film provided on one surface of the photoconductive layer, a light blocking layer provided on the other surface of the photoconductive layer, a dielectric multilayered film provided on the light blocking layer, a light modulation layer provided on the dielectric multilayered film, and the other transparent electrode film provided on the surface of the light modulation layer, said light modulation layer consisting of a liquid crystal material for changing intensity, phase or running direction of read-out light by applying a voltage, wherein the light blocking layer is an amorphous film consisting essentially of 5-45 atomic % of germanium, 17.5-92.5 atomic % of carbon and 2.5-77.5 atomic % of silicon. Thereby, the magnification of the intensity of read-out light to intensity of write-in light can be increased.
    • 空间光调制器至少包括光电导层,设置在光电导层的一个表面上的一个透明电极膜,设置在光电导层的另一个表面上的遮光层,设置在遮光层上的电介质多层膜, 设置在电介质多层膜上的光调制层和设置在光调制层表面上的另一透明电极膜,所述光调制层由用于通过以下方式改变读出光的强度,相位或行进方向的液晶材料组成 施加电压,其中所述阻光层是基本上由5-45原子%的锗,17.5-92.5原子%的碳和2.5-77.5原子%的硅组成的非晶膜。 因此,可以增加读出光的强度与写入光强度的放大倍数。