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1. 发明申请

US20080224219A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080224219A1
公开(公告)日：2008-09-18
申请号：US12126473
申请日：2008-05-23
申请人： Takayuki SAIKI , Kazuhiko Okawa
发明人： Takayuki SAIKI , Kazuhiko Okawa
IPC分类号： H01L23/62
CPC分类号： H01L27/0288
摘要： A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer insulating film is also formed. In a plurality of openings in the interlayer insulating film, one electrode group having a plurality of electrodes is formed on one N-type region, while a second electrode group having a plurality of electrodes is formed on the other N-type region. The relationship between the two N-type regions is between an island region and an annular region surrounding the island. The annular region of the N-type well between the island region and the annular region serves as a resistor R. Thus, discharge channels for charges applied excessively because of ESD or the like evenly exist in the periphery (four regions) of the one N-type region.
摘要翻译：提供具有高性能电阻元件的半导体器件。在绝缘膜隔离的N型阱中，形成两个较高浓度的N型区域。还形成层间绝缘膜。在层间绝缘膜的多个开口中，在一个N型区域上形成具有多个电极的一个电极组，而在另一个N型区域上形成具有多个电极的第二电极组。两个N型区域之间的关系在岛状区域和围绕岛状物的环状区域之间。岛状区域和环状区域之间的N型阱的环状区域用作电阻R.因此，由于ESD等而过度施加的电荷的放电通道在一个N的周边（四个区域）中均匀地存在型区域。

2. 发明申请

US20100133701A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20100133701A1
公开(公告)日：2010-06-03
申请号：US12627652
申请日：2009-11-30
申请人： Takayuki SAIKI , Shinya SATO , Hiroyuki TAKAMIYA
发明人： Takayuki SAIKI , Shinya SATO , Hiroyuki TAKAMIYA
IPC分类号： H01L23/60 , H01L21/60
CPC分类号： H01L25/0657 , H01L23/481 , H01L23/60 , H01L24/29 , H01L24/32 , H01L24/48 , H01L25/18 , H01L27/0251 , H01L2224/0401 , H01L2224/0557 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/078 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2224/05552 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: a plurality of external terminals; a plurality of semiconductor substrates that are layered; a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals; and a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates. In the device, the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits.
摘要翻译：半导体器件包括：多个外部端子; 层叠的多个半导体基板; 穿透电极，穿透至少一个所述半导体衬底并与所述任何外部端子电连接; 以及设置在所述半导体基板中的任一个上的多个静电放电保护电路。在该器件中，贯通电极与多个静电放电保护电路电连接。

3. 发明申请

US20100133678A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20100133678A1
公开(公告)日：2010-06-03
申请号：US12627510
申请日：2009-11-30
申请人： Takayuki SAIKI , Shinya SATO , Hiroyuki TAKAMIYA
发明人： Takayuki SAIKI , Shinya SATO , Hiroyuki TAKAMIYA
IPC分类号： H01L23/60 , H01L21/70
CPC分类号： H01L25/0657 , H01L23/481 , H01L23/60 , H01L24/73 , H01L27/0266 , H01L2224/04042 , H01L2224/16225 , H01L2224/48227 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/15311 , H01L2924/181 , H01L2924/00
摘要： A semiconductor device includes: a plurality of semiconductor substrates that are layered; a through electrode penetrating through a predetermined semiconductor substrate of the semiconductor substrates and electrically connected with an external terminal of the semiconductor device; a circuit element provided on the predetermined semiconductor substrate; and an electrostatic discharge protection circuit also provided on the predetermined semiconductor substrate. In the device, wiring resistance between the electrostatic discharge protection circuit and the through electrode is smaller than wiring resistance between the circuit element and the through electrode.
摘要翻译：半导体器件包括：层叠的多个半导体衬底; 穿透电极，穿过半导体衬底的预定半导体衬底并与半导体器件的外部端子电连接; 设置在所述预定半导体衬底上的电路元件; 以及也设置在预定半导体衬底上的静电放电保护电路。在该装置中，静电放电保护电路与贯通电极之间的布线电阻小于电路元件与贯通电极之间的布线电阻。

4. 发明申请

US20080253045A1 Integrated circuit device and electronic instrument 有权
标题翻译：集成电路器件和电子仪器
公开(公告)号：US20080253045A1
公开(公告)日：2008-10-16
申请号：US12081004
申请日：2008-04-09
申请人： Shinya SATO , Takayuki SAIKI , Hiroyuki TAKAMIYA
发明人： Shinya SATO , Takayuki SAIKI , Hiroyuki TAKAMIYA
IPC分类号： H02H9/00
CPC分类号： H01L27/0251
摘要： An interface circuit is provided between a first circuit block and a second circuit block that operates using a power supply system differing from that of the first circuit block. An electrostatic discharge protection circuit that include a PN diode and a diffused resistor is formed in order to prevent electrostatic discharge destruction of a gate insulating film of a transistor that forms the interface circuit. The electrostatic discharge protection circuit may be formed using the remaining basic cells of a gate array that forms the second circuit block. An electrostatic discharge protection circuit formed of a bidirectional diode may be connected between a first low-potential power supply and a second low-potential power supply.
摘要翻译：在第一电路块和使用不同于第一电路块的电源系统的电源系统操作的第二电路块之间提供接口电路。形成包括PN二极管和扩散电阻器的静电放电保护电路，以防止形成接口电路的晶体管的栅极绝缘膜的静电放电破坏。可以使用形成第二电路块的门阵列的剩余基本单元形成静电放电保护电路。由双向二极管形成的静电放电保护电路可以连接在第一低电位电源和第二低电位电源之间。

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