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    • 1. 发明授权
    • Method of manufacturing field effect transistors
    • 制造场效应晶体管的方法
    • US5112766A
    • 1992-05-12
    • US730626
    • 1991-07-16
    • Takayuki FujiiMitsunori Nakatani
    • Takayuki FujiiMitsunori Nakatani
    • H01L21/22H01L21/338H01L29/10H01L29/417H01L29/423H01L29/812
    • H01L29/66878H01L29/1075H01L29/42316
    • A method of producing a field effect transistor includes forming a first conductivity type active layer having a first concentration of dopant impurities producing the first conductivity type in a semi-insulating semiconductor substrate, forming a mask film on the substrate on part of the first conductivity type region, depositing a gate metal film on the mask film and on the substrate not covered by the mask film, etching the gate metal film and leaving a portion of the gate metal film on the substrate adjacent to and contacting the mask film as a gate electrode, implanting dopant impurities producing a second conductivity type in the substrate using the mask film and the gate electrode as an implantation mask, annealing the substrate at an elevated temperature to activate the implanted dopant impurities whereby some of the implanted dopant impurities diffuse laterally within the substrate to produce a second conductivity type region in the substrate underneath part of the gate electrode, removing the mask film, implanting dopant impurities producing the first conductivity type in the substrate using the gate electrode as an ion implantation mask to produce first and second doped regions in the substrate on opposite sides of the gate electrode and having a second concentration of dopant impurities larger than the first concentration, the second doped region being disposed within the second conductivity type region that extends underneath part of the gate electrode, and forming a source electrode on the first doped region and a drain electrode on the second doped region.
    • 8. 发明申请
    • COMMUNICATION DEVICE AND COMMUNICATION SYSTEM
    • 通信设备和通信系统
    • US20100271972A1
    • 2010-10-28
    • US12810238
    • 2008-12-24
    • Takayuki FujiiMasaaki Tamai
    • Takayuki FujiiMasaaki Tamai
    • H04B17/00H04L27/00H04L12/26
    • H04B3/54H04B3/145H04B2203/5445H04L1/0003H04L1/0009H04L1/0018
    • A communication device of the present invention is a communication device which performs data communication via a power line (3) whose transmission characteristics fluctuate, and includes: a parameter group setting unit (111) which sets a first group of transmission parameters; a degree-of-limitation determining unit (40) which determines a degree of limitation on group of transmission parameters for limiting a part of the first group of the transmission parameters; a parameter group converting unit (20) which converts, into a second group of transmission parameters, the first group of the transmission parameters, by limiting the part of the first group of the transmission parameters; a channel communicating unit (30) which obtains a result of transmission parameter evaluation data using the second group of the transmission parameters; and a parameter determining unit (111) which determines an optimal transmission parameter for current data communication, based on the result of the transmission parameter evaluation data.
    • 本发明的通信装置是经由发送特性波动的电力线(3)进行数据通信的通信装置,具有:设定第一组发送参数的参数组设定部(111) 限度确定单元(40),其确定用于限制所述第一组传输参数的一部分的传输参数组的限制程度; 参数组转换单元,通过限制第一组传输参数的一部分,将第一组传输参数转换成第二组传输参数; 信道通信单元,其使用所述第二组传输参数获得传输参数评估数据的结果; 以及基于传输参数评估数据的结果确定当前数据通信的最佳传输参数的参数确定单元(111)。