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    • 5. 发明申请
    • Ultralight soundproof material
    • 超轻型隔音材料
    • US20060201741A1
    • 2006-09-14
    • US10551124
    • 2004-03-23
    • Toru InoueMasaki IshikawaYouhei IshikawaSohei MatsuyamaHideyuki Mori
    • Toru InoueMasaki IshikawaYouhei IshikawaSohei MatsuyamaHideyuki Mori
    • F02B77/13
    • G10K11/16B60R13/0815G10K11/168Y10T428/249953Y10T428/249982Y10T428/249987
    • A sound insulator of the invention includes a sound absorption layer 202 and an air-impermeable resonance layer 203, which are bonded to each other via an adhesive layer 204. The sound absorption layer 202 has a thickness in a range of 5 to 50 mm and an area-weight of not greater than 2000 g/m2. The sound absorption layer 202 has a two-layer structure of a high-density sound absorption layer 202a and a low-density sound absorption layer 202b, which have different densities. The high-density sound absorption layer 202a is bonded to the air-impermeable resonance layer 203 via the adhesive layer 204 and has a density in a range of 0.05 to 0.20 g/cm3 and a thickness in a range of 2 to 30 mm. The low-density sound absorption layer 202b is bonded to the other face of the high-density sound absorption layer 202a, which is opposite to the air-impermeable resonance layer 203, via an adhesive layer 202c and has a density in a range of 0.01 to 0.10 g/cm3 and a thickness in a range of 2 to 30 mm. The structure of this sound insulator effectively reduces a noise level in a voice-tone frequency band, especially in a high frequency domain, thereby efficiently enhancing the clarity of conversion in a vehicle interior.
    • 本发明的隔音器包括通过粘合剂层204彼此结合的吸声层202和不透气的共振层203。 吸音层202的厚度为5〜50mm,面积重量为2000g / m 2以下。 吸音层202具有密度不同的高密度吸声层202a和低密度吸声层202b的两层结构。 高密度吸声层202a经由粘合剂层204与不透气性共振层203接合,密度为0.05〜0.20g / cm 3,厚度为 范围为2至30 mm。 低密度吸声层202b经由粘合层202c与不透气性共振层203相对的高密度吸声层202a的另一面粘接,密度为 范围为0.01〜0.10g / cm 3,厚度范围为2〜30mm。 该隔音器的结构有效地降低了语音频带中的噪声水平,特别是在高频域,从而有效地提高了车辆内部的转换清晰度。
    • 7. 发明授权
    • Thin film device, thin film magnetic head and magnetoresistive element
    • 薄膜器件,薄膜磁头和磁阻元件
    • US06414825B1
    • 2002-07-02
    • US09409382
    • 1999-09-30
    • Toru InoueKoichi Terunuma
    • Toru InoueKoichi Terunuma
    • G11B539
    • G11B5/3903G11B5/235G11B5/3133G11B5/40
    • An object of the invention is to improve the thermal conductivity and the hardness of a first shield gap film and a second shield gap film. Another object is to improve the thermal conductivity while decreasing the stress. The first shield gap film and the second shield gap film are formed of an insulating film which includes at least one of BN, SiN or CN as the main component, a little Ar and oxygen. Higher thermal conductivity can be obtained by using the insulating film which includes at least one of BN, SiN, or CN so that the heat generated in an MR element can be effectively dissipated. In addition, including Ar improves the hardness so that excessive polishing can be suppressed at the time of forming the air bearing surface. Moreover, including oxygen decreases the stress and exfoliation of the first and the second shield gap films can be avoided.
    • 本发明的目的是提高第一屏蔽间隙膜和第二屏蔽间隙膜的热导率和硬度。 另一个目的是提高导热性同时降低应力。 第一屏蔽间隙膜和第二屏蔽间隙膜由包括BN,SiN或CN中的至少一种作为主要成分,少量Ar和氧的绝缘膜形成。 通过使用包括BN,SiN或CN中的至少一种的绝缘膜可以获得更高的导热性,使得可以有效地消散在MR元件中产生的热量。 此外,包括Ar提高硬度,从而在形成空气轴承表面时可以抑制过多的抛光。 此外,包括氧减少了应力,并且可以避免第一和第二屏蔽间隙膜的剥离。