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1. 发明授权

US5254872A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5254872A
公开(公告)日：1993-10-19
申请号：US673265
申请日：1991-03-21
申请人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
发明人： Takashi Yoda , Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L23/53223 , H01L2924/0002
摘要： A semiconductor device having a reliable contact is disclosed. The device includes a barrier film deposited on the bottom and side wall of a contact hole opened in a insulating film at a predetermined position; a first metal film filled in the contact hole; and a second metal film of low resistance for forming an interconnection which passes above the contact hole filled in with the first metal film. An oxide film is formed by oxidation on the barrier metal film. And a method of manufacturing the semiconductor device is disclosed. The method includes the steps of: after opening a contact hole at a predetermined position in an insulating film deposited on a semiconductor substrate, forming a barrier film in the bottom and side wall of the contact hole; filling the contact hole with a first metal film while heating the semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning the second metal film to form an interconnection which passes the contact hole that has been filled in with the first metal film.
摘要翻译：公开了具有可靠接触的半导体器件。该装置包括沉积在预定位置处在绝缘膜上开口的接触孔的底部和侧壁上的阻挡膜; 填充在接触孔中的第一金属膜; 以及用于形成互连件的低电阻的第二金属膜，其通过填充有第一金属膜的接触孔以上。在阻挡金属膜上通过氧化形成氧化膜。并且公开了一种制造半导体器件的方法。该方法包括以下步骤：在沉积在半导体衬底上的绝缘膜中的预定位置打开接触孔之后，在接触孔的底壁和侧壁中形成阻挡膜; 在第一金属膜上填充接触孔，同时在预定温度下加热半导体衬底; 以及在所述半导体器件的表面上沉积第二金属膜，并且对所述第二金属膜进行构图以形成通过已经填充有所述第一金属膜的所述接触孔的互连。

2. 发明授权

US5278104A Semiconductor wafer carrier having a dust cover 失效
标题翻译：具有防尘罩的半导体晶片载体
公开(公告)号：US5278104A
公开(公告)日：1994-01-11
申请号：US870240
申请日：1992-04-20
申请人： Masako Kodera , Tohru Watanabe , Katsuya Okumura
发明人： Masako Kodera , Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/673 , H01L21/68 , H01L21/306
CPC分类号： H01L21/67326 , H01L21/67386 , Y10S134/902 , Y10S414/135
摘要： A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support frame supporting the semiconductor device, and a dust protection plate mounted on the support frame and positioned above the semiconductor device. When the semiconductor device support carrier is drawn up from the process liquid, dust in the process liquid is pushed aside and out of the semiconductor device by the dust protection plate.
摘要翻译：公开了一种用于具有工艺液体的半导体器件的液相工艺的半导体器件支撑载体。半导体器件支撑载体包括支撑半导体器件的支撑框架和安装在支撑框架上并位于半导体器件上方的防尘板。当半导体器件支撑载体从处理液体中拉出时，处理液中的灰尘被防尘板推到半导体器件外面。

3. 发明授权

US5225036A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5225036A
公开(公告)日：1993-07-06
申请号：US759903
申请日：1991-09-13
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76879
摘要： A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.
摘要翻译：本发明提供一种制造半导体器件的方法和装置，其中在硅和氧化硅膜的蚀刻速度之间的差异变小的条件下，中间半导体器件上的氧化硅膜被正确蚀刻出去而不损坏硅，之后立即在硅的表面上形成另一薄膜，从中除去氧化硅膜。

4. 发明授权

US5101259A Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US5101259A
公开(公告)日：1992-03-31
申请号：US226472
申请日：1988-08-01
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/31 , H01L21/312 , H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5328 , H01L21/312 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L2924/0002 , H01L2924/12044
摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film.

5. 发明授权

US5067437A Apparatus for coating of silicon semiconductor surface 失效
标题翻译：用于涂覆硅半导体表面的装置
公开(公告)号：US5067437A
公开(公告)日：1991-11-26
申请号：US329847
申请日：1989-03-28
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/316 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76879 , Y10S438/913
摘要： An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.

6. 发明授权

US4954218A Method for etching a pattern 失效
标题翻译：腐蚀图案的方法
公开(公告)号：US4954218A
公开(公告)日：1990-09-04
申请号：US389681
申请日：1989-08-04
申请人： Katsuya Okumura , Tohru Watanabe , Masami Watase
发明人： Katsuya Okumura , Tohru Watanabe , Masami Watase
IPC分类号： H01L21/302 , H01L21/033 , H01L21/208 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/3213 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01L21/76838 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/316 , H01L21/32 , H01L21/32139 , H01L21/76802
摘要： A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

7. 发明授权

US5552628A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5552628A
公开(公告)日：1996-09-03
申请号：US389563
申请日：1995-02-16
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58 , H01L23/48
CPC分类号： H01L23/53271 , H01L21/316 , H01L21/76819 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.
摘要翻译：本发明的半导体器件包括硅衬底，形成在硅衬底上的氧化硅层，形成在氧化硅层上的第一铝线，至少覆盖第一铝线的CVD SiO 2层和从液相材料，无机氧化物至少填充第一铝线之间的间隙。

8. 发明授权

US5302548A Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5302548A
公开(公告)日：1994-04-12
申请号：US819051
申请日：1992-01-10
申请人： Tohru Watanabe , Katsuya Okumura
发明人： Tohru Watanabe , Katsuya Okumura
IPC分类号： H01L21/31 , H01L21/312 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/441 , H01L21/324
CPC分类号： H01L23/5328 , H01L21/312 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L2924/0002 , H01L2924/12044
摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film. An inorganic layer is deposited as a protective layer.
摘要翻译：半导体器件包括至少一个布线层，该布线层含有铝作为主要成分，并且通过在其上形成有元件或元件的半导体衬底上的绝缘膜提供，并且提供具有小吸水性基团的耐热高分子有机膜在布线层的侧表面上。耐热性高分子有机膜优选由聚苯硫醚形成。半导体器件的方法包括以下步骤：在半导体衬底上形成元件，在元件上形成绝缘膜，通过沉积和图案化形成铝布线层，沉积具有吸水率小的自由基的耐热高分子有机膜性质，并在耐热高分子有机膜的温度下加热以使流化并平坦化耐热性高分子有机膜。沉积无机层作为保护层。

9. 发明授权

US5032491A Method of forming a fine pattern 失效
标题翻译：形成精细图案的方法
公开(公告)号：US5032491A
公开(公告)日：1991-07-16
申请号：US234725
申请日：1988-08-22
申请人： Katsuya Okumura , Tohru Watanabe
发明人： Katsuya Okumura , Tohru Watanabe
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/0271 , H01L21/31138
摘要： A photoresist is coated on a substrate to form a planar surface, thus to form a recessed portions corresponding to a mask of a pattern to be formed in the photoresist layer having planar surface. SiO.sub.2 etc. are deposited into the recessed portions to prepare a mask, thus to form a fine pattern by anisotropic etching. As a result, by films remaining below the recessed portions formed in the photoresist layer having planar surface, a fine pattern is formed.

10. 发明授权

US5398459A Method and apparatus for polishing a workpiece 失效
标题翻译：抛光工件的方法和设备
公开(公告)号：US5398459A
公开(公告)日：1995-03-21
申请号：US156641
申请日：1993-11-24
申请人： Katsuya Okumura , Tohru Watanabe , Riichirou Aoki , Hiroyuki Yano , Masako Kodera , Atsushi Shigeta , You Ishii , Norio Kimura , Masayoshi Hirose , Yukio Ikeda
发明人： Katsuya Okumura , Tohru Watanabe , Riichirou Aoki , Hiroyuki Yano , Masako Kodera , Atsushi Shigeta , You Ishii , Norio Kimura , Masayoshi Hirose , Yukio Ikeda
IPC分类号： B24B37/10 , B24B37/30 , B24B1/00
CPC分类号： B24B37/102 , B24B37/30
摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.
摘要翻译：诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动使工件相对于保持环中的顶环执行行星运动。

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