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    • 4. 发明授权
    • Thermal cutting machine and thermal cutting method
    • 热切割机和热切割方法
    • US08729421B2
    • 2014-05-20
    • US11629283
    • 2005-06-02
    • Satoshi OhnishiYoshihiro Yamaguchi
    • Satoshi OhnishiYoshihiro Yamaguchi
    • B23K9/02
    • B23K37/0408B23K7/002B23K10/00B23K26/0884B23K26/16B23K26/38B23K26/702B23K37/0461B23K2101/18
    • A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
    • 具有用于放置板14的大量支撑器的格子托盘13被安装到桌子12上,以便可自由地装配和拆卸。 通过用起重机提升格子托盘13的方法来进行板14的进入,该起重机已将板14已经装载在不同位置的格子托盘13上,将它们运送到工作台12上,并将它们下降到 桌子12.切割完成之后,格子托盘12被升起并与工作台12分离,制成品并将剩下的材料运送到其上并被带走到不同的位置,另一个格子托盘13具有 安装在其上的另一个板14与起重机一起被放置在工作台12上,并且开始切割另一个板14的任务。
    • 6. 发明授权
    • Dye-sensitized solar cell
    • 染料敏化太阳能电池
    • US08530738B2
    • 2013-09-10
    • US13254920
    • 2010-03-04
    • Shuzi HayaseYoshihiro Yamaguchi
    • Shuzi HayaseYoshihiro Yamaguchi
    • H01L31/0248H01L31/0216
    • H01G9/2072H01G9/2031H01G9/2059H01L51/0064H01M14/005Y02E10/542Y02P70/521
    • There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost.A dye-sensitized solar cell 10 comprises an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, an electrolytic solution layer 16a, a porous support layer 18, a second dye-carrying porous oxide semiconductor layer 20, an electrolytic solution layer 16b, and a cathode substrate 22, arranged in order from an optical incidence side. The porous support layer 18 supports an iodine redox catalyst layer 19. Electrons derived by a conductor from a conductor layer 12b are introduced to the cathode substrate 22, thereby configuring, for example, a battery circuit for lighting purposes.
    • 提供了具有新型结构的串联型染料敏化太阳能电池,由此光学吸收效率提高并且可以以低成本制造。 染料敏化太阳能电池10包括阳极基底12,第一染料负载多孔氧化物半导体层14,电解液层16a,多孔载体层18,第二染料负载多孔氧化物半导体层20,电解溶液 层16b和阴极基板22,从光入射侧依次配置。 多孔支撑层18支撑碘氧化还原催化剂层19.由导体层12b导体产生的电子引入阴极基板22,从而构成例如用于照明目的的电池电路。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07872308B2
    • 2011-01-18
    • US12332260
    • 2008-12-10
    • Miwako AkiyamaYusuke KawaguchiYoshihiro Yamaguchi
    • Miwako AkiyamaYusuke KawaguchiYoshihiro Yamaguchi
    • H01L29/76
    • H01L29/7813H01L21/26586H01L29/0634H01L29/0869H01L29/0878H01L29/1095H01L29/41741H01L29/41766H01L29/66727H01L29/66734
    • A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion.
    • 半导体器件包括:第一导电类型的第一半导体层; 第一导电类型的第二半导体层设置在第一半导体层的主表面上并且具有比第一半导体层的杂质浓度低的第二半导体层; 设置在第二半导体层上的第二导电类型的第三半导体层; 选择性地设置在第三半导体层上的第一导电类型的第四半导体层; 设置在穿过所述第三半导体层并到达所述第二半导体层的沟槽中的栅电极; 与所述第四半导体层接触的第一主电极,并且通过设置成在所述连续的栅电极之间穿过所述第四半导体层的接触槽使所述第三半导体层接触; 设置在与所述第一半导体层的主表面相反的表面上的第二主电极; 以及第二导电类型的第五半导体层,设置在与所述接触槽下方的部分对应的所述第二半导体层的内部。 第五半导体层的最上部与第三半导体层接触,第五半导体层的最下部分的杂质浓度比第五半导体层中的其他部分杂质浓度高,位于第二半导体层中, 第一半导体层,第五半导体层从最上部到最下部较窄。