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1. 发明授权

US06333267B1 Method of manufacturing active matrix type liquid crystal display 失效
标题翻译：有源矩阵型液晶显示器的制造方法
公开(公告)号：US06333267B1
公开(公告)日：2001-12-25
申请号：US08400861
申请日：1995-03-08
申请人： Takashi Onishi , Eiji Iwamura , Seigo Yamamoto , Katsutoshi Takagi , Kazuo Yoshikawa
发明人： Takashi Onishi , Eiji Iwamura , Seigo Yamamoto , Katsutoshi Takagi , Kazuo Yoshikawa
IPC分类号： H01L21285
CPC分类号： H01L21/28008 , C23C14/165 , G02F1/136286 , G02F2001/136295
摘要： An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 Å or more.
摘要翻译：通过降低互连膜的电阻率，缩短了通过防止栅绝缘部分的短路和绝缘击穿以及栅极总线延迟时间来提高可靠性的有源矩阵型液晶显示器。这种液晶显示器通过以下步骤制造：通过物理沉积在衬底上形成互连/电极膜; 图案化互连/电极膜; 和阳极氧化部分或全部的互连/电极膜。在该方法中，互连电极膜由含有0.1〜10原子％的Fe，Co和稀土元素中的至少一种的Al合金形成，阳极氧化膜的厚度规定在200以上的范围内。

2. 再颁专利

USRE43590E1 Aluminum alloy electrode for semiconductor devices 有权
标题翻译：半导体器件铝合金电极
公开(公告)号：USRE43590E1
公开(公告)日：2012-08-21
申请号：US11430302
申请日：2006-05-09
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： H01L23/54
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.REEXAMINATION RESULTSThe questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150℃至400℃的退火温度下退火Al合金膜，使溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μΩ·cm·cm的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。重审结果2005年11月28日和2005年11月28日提交的第90 / 007,822号和第90 / 007,883号复核程序中提出的问题已经被考虑，其结果反映在构成复审的重新发行专利中 35USC要求的证书根据37 CFR 1.570（e）规定，单方面复审，和/或35 U.S.C.所要求的复审证书。按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。

3. 发明授权

US6033542A Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 失效
标题翻译：电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶
公开(公告)号：US6033542A
公开(公告)日：2000-03-07
申请号：US574693
申请日：1995-12-19
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L23/532
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物。由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

4. 再颁专利

USRE44239E1 Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices 有权
标题翻译：电极及其半导体器件的制造方法以及用于形成用于半导体器件的电极膜的溅射靶
公开(公告)号：USRE44239E1
公开(公告)日：2013-05-28
申请号：US11430299
申请日：2006-05-09
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736 , H01L2924/00
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μOmegacm的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

5. 发明授权

US5514909A Aluminum alloy electrode for semiconductor devices 失效
标题翻译：半导体器件铝合金电极
公开(公告)号：US5514909A
公开(公告)日：1996-05-07
申请号：US281028
申请日：1994-07-27
申请人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
发明人： Seigo Yamamoto , Katsutoshi Takagi , Eiji Iwamura , Kazuo Yoshikawa , Takashi Oonishi
IPC分类号： C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L23/532 , H01L23/544
CPC分类号： H01L21/2855 , H01L23/53219 , H01L2924/0002 , Y10T428/12736
摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.
摘要翻译：公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素来自稀土元素，总量为0.05〜15原子％。制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并将溶解在Al基体中的所有元素的一部分析出为金属间化合物，退火温度为150〜400℃退火Al合金膜。由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。目标由含有上述元素的Al合金制成。

6. 发明授权

US6027792A Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same 失效
标题翻译：含卤素气体腐蚀和含卤素等离子体腐蚀性优异的涂膜，其涂覆层压结构体及其制造方法
公开(公告)号：US6027792A
公开(公告)日：2000-02-22
申请号：US849123
申请日：1997-06-03
申请人： Seigo Yamamoto , Katsuhiro Itayama , Kouki Ikeda , Jun Hisamoto , Takashi Onishi
发明人： Seigo Yamamoto , Katsuhiro Itayama , Kouki Ikeda , Jun Hisamoto , Takashi Onishi
IPC分类号： C23C14/02 , C23C14/08 , C23C16/48 , G02B1/10
CPC分类号： G02B1/105 , C23C14/024 , C23C14/081 , C23C16/488 , Y10T428/24942 , Y10T428/24975 , Y10T428/265
摘要： The present invention relates to a coating film excellent in resistance to corrosive halogen-containing gas and halogen-containing plasma, a method for producing the same, and technology utilizing the same.More specifically, the coating film includes an aluminum oxide as an essential material and silicon-containing material, and the coating film has such a tightness that the content of the silicon-containing material is 5 wt % or less when reduced to silicon. In other word, the coating film has no peak of a half-value width of 5.degree. or less in X-ray diffraction. In still other word, the coating film is a little short of oxygen having an oxygen-to aluminum atomic ration of 1.3 or more to below 1.5. The present invention provides a laminated structure coated with such a coating film such as a window material for use in a vacuum apparatus, and a method for producing the window material.
摘要翻译： PCT No.PCT / JP96 / 02887 Sec。 371日期：1997年6月3日 102（e）日1997年6月3日PCT 1996年10月3日提交PCT本发明涉及耐腐蚀性含卤素气体和含卤素等离子体的耐腐蚀性优异的涂膜及其制造方法，相同。更具体地，涂膜包括作为必需材料的氧化铝和含硅材料，并且涂膜具有这样的密封性，使得当被还原成硅时，含硅材料的含量为5重量％以下。换句话说，涂膜在X射线衍射中没有半值宽度为5度以下的峰值。换句话说，涂膜的氧 - 铝原子比为1.3以上至1.5以下的一点点。本发明提供一种涂覆有如真空装置中使用的窗口材料等涂膜的层压结构体及其制造方法。

7. 发明申请

US20140165517A1 FILTER MEDIUM FOR AIR FILTER, AIR FILTER UNIT, AND METHOD FOR PRODUCING FILTER MEDIUM FOR AIR FILTER 审中-公开
标题翻译：用于空气过滤器，空气过滤器单元的过滤介质和用于生产用于空气过滤器的过滤介质的方法
公开(公告)号：US20140165517A1
公开(公告)日：2014-06-19
申请号：US14241015
申请日：2012-08-30
申请人： Satoshi Hara , Li Bao , Kunihiko Inui , Seigo Yamamoto , Yoshiyuki Shibuya , Makoto Kobayashi , Hitoshi Niinuma
发明人： Satoshi Hara , Li Bao , Kunihiko Inui , Seigo Yamamoto , Yoshiyuki Shibuya , Makoto Kobayashi , Hitoshi Niinuma
IPC分类号： B01D46/00
CPC分类号： B01D46/0023 , B01D39/1623 , B01D39/1692 , B01D46/10 , B01D46/523 , B01D2239/0627 , B01D2239/065 , B01D2239/0654 , B01D2239/0668 , B01D2239/1233 , B01D2265/06 , B01D2275/10 , B32B5/022 , B32B5/26 , B32B7/12 , B32B2250/20 , B32B2262/0253 , B32B2262/0261 , B32B2262/12 , B32B2307/724 , D06M17/00 , Y10T156/10
摘要： A filter medium for an air filter unit for collecting dust from an airflow includes a pre-collection layer, a principal collection layer and an air-permeable cover layer. The pre-collection layer collects a part of the dust in the air flow. The principal collection layer includes a porous polytetrafluoroethylene film. The principal collection layer is positioned on a downstream side of the air flow relative to the pre-collection layer to collect dust that passes through the pre-collection layer. The air-permeable cover layer is positioned as an outermost surface layer of the filter medium on an upstream side of the air flow to allow dust in the air flow to pass through. The air-permeable cover layer is configured to suppress deformation of a surface of the filter medium caused by pressing force from an outside. Preferably, an air filter unit includes the filter medium in a zigzag shape.
摘要翻译：用于从气流收集灰尘的用于空气过滤器单元的过滤介质包括预收集层，主收集层和透气覆盖层。预收集层收集空气流中的一部分灰尘。主要收集层包括多孔聚四氟乙烯膜。主收集层相对于预收集层位于空气流的下游侧，以收集通过预收集层的灰尘。透气性覆盖层在空气流的上游侧被定位为过滤介质的最外表面层，以允许空气流中的灰尘通过。透气性覆盖层构成为抑制由外部的按压力引起的过滤介质的表面的变形。优选地，空气过滤器单元包括Z字形的过滤介质。

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