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    • 4. 发明授权
    • Headlamp LED lighting apparatus and vehicle headlamp lighting system
    • 前照灯LED照明装置和车灯前照灯系统
    • US08575839B2
    • 2013-11-05
    • US13381876
    • 2009-09-10
    • Yu InoueTakashi Ohsawa
    • Yu InoueTakashi Ohsawa
    • B60Q1/04
    • H05B33/0893
    • A headlamp LED lighting apparatus, which lights an LED block 2 having a plurality of LEDs connected in series, samples the output voltage of the headlamp LED lighting apparatus, calculates the average voltage during every prescribed interval, and has a storage unit for storing the average voltage during every prescribed interval calculated. A control circuit 8 compares the voltage variation in the average voltage during every prescribed interval read out of the storage unit with a prescribed threshold, and decides an LED failure of the LED block 2 from a result of the comparison.
    • 照亮具有串联连接的多个LED的LED块2的前照灯LED照明装置对前照灯LED照明装置的输出电压进行采样,计算每个规定间隔期间的平均电压,并具有用于存储平均值的存储单元 计算每个规定间隔期间的电压。 控制电路8将从存储单元读出的每个规定间隔期间的平均电压的电压变化与规定的阈值进行比较,并根据比较结果判定LED块2的LED故障。
    • 5. 发明申请
    • TRANSFORMER
    • 变压器
    • US20130027173A1
    • 2013-01-31
    • US13639171
    • 2010-07-26
    • Takashi Ohsawa
    • Takashi Ohsawa
    • H01F27/28
    • H01F27/325H01F27/2852H01F27/306
    • A columnar leg portion 54 of a first core 50 is inserted into a tubular portion 21 of a second bobbin 20 having a secondary winding 40 wound therearound and including a flange 22 at one end, and the columnar leg portion 54 of the first core 50 and the tubular portion 21 of the second bobbin 20 are inserted into a tubular portion 11 of a first bobbin 10 having a primary winding 30 wound therearound and having a flange 12 at one end, and a leading end 41 as the wind-beginning of the secondary winding 40 is pulled out to the outside of a transformer through the gap between the tubular portions 11 and 21.
    • 第一芯50的柱状腿部54插入到具有卷绕在其周围的次级绕组40的第二线轴20的管状部分21中,并且在一端包括凸缘22,并且在第一芯50的柱状腿部54和 第二绕线筒20的管状部分21插入到第一线轴10的管状部分11中,第一线轴10具有卷绕在其上的初级绕组30,并且在一端具有凸缘12,并且作为次级的起始端的前端41 绕组40通过管状部分11和21之间的间隙被拉出到变压器的外部。
    • 6. 发明授权
    • Semiconductor memory device and driving method of the same
    • 半导体存储器件及其驱动方法
    • US08174920B2
    • 2012-05-08
    • US12711613
    • 2010-02-24
    • Fumiyoshi MatsuokaTakashi Ohsawa
    • Fumiyoshi MatsuokaTakashi Ohsawa
    • G11C7/02G11C11/24
    • G11C11/4091G11C11/4076G11C2207/002G11C2207/005G11C2211/4016
    • A memory includes a first and a second bit lines (BL); a first and a second sense nodes (SN); a first transfer gate between the 1st-BL and the 1st-SN; a second transfer gate (TG) between the 2nd-BL and the 2nd-SN; a latch circuit latching data to the 1st and 2nd-SN; a first data line (DQ) from the 1st-SN to outside; and a 2nd-DQ from the 2nd-SN to outside, wherein write data is transmitted from the 1st and 2nd-DQ to the 1st and 2nd-SN corresponding to selected cells before the 1st and 2nd-TG are set to be a conductive state, when writing data into the selected cells to be written out of the cells, and write data in the 1st and 2nd-SN corresponding to the selected cells are started to be written into the selected cells, when the 1st and 2nd-TG are set to be a conductive state.
    • 存储器包括第一和第二位线(BL); 第一和第二感测节点(SN); 第一个BL和第一个SN之间的第一个传输门; 在第二BL和第二-SN之间的第二传输门(TG); 锁存电路将数据锁存到第1和第2-SN; 第一个数据线(DQ)从第一个SN到外部; 以及从第2-SN到外部的第2-DQ,其中在将第1和第2 -TT设置为导通状态之前,将写入数据从第1和第2-DQ发送到对应于所选择的单元的第1和第2-SN 当将数据写入要被写入单元格的所选单元格中时,开始将与所选单元相对应的第1和第2-SN中的写入数据写入所选单元格,当设置第1和第2 -TG时 成为导电状态。
    • 9. 发明授权
    • Semiconductor memory device and driving method thereof
    • 半导体存储器件及其驱动方法
    • US07839711B2
    • 2010-11-23
    • US12352876
    • 2009-01-13
    • Tomoki HigashiTakashi Ohsawa
    • Tomoki HigashiTakashi Ohsawa
    • G11C7/00
    • G11C11/404G11C11/406G11C2211/4016G11C2211/4065G11C2211/4068
    • A memory including; cells, wherein a refresh operation includes a first refresh and a second refresh, in the first refresh, a first potential higher than a gate potential in a retention is applied to the gate in a state having a source potential applied to the drain, and thereafter the gate potential in the retention is applied to the gate, thereby a first current passes to the cell, and in the second refresh, a second potential higher than a gate potential in the retention is applied to the gate, and a third potential higher than the gate potential in the retention is applied to the drain, thereby a second current passes to the cell, and a state of the cell is shifted to an equilibrium state in which amounts of the first and the second currents flowing during one cycle becomes substantially equal.
    • 一个记忆包括 单元,其中刷新操作包括第一刷新和第二刷新,在具有施加到漏极的源极电位的状态下,将高于保持中的栅极电位的第一电位施加到栅极,之后 将保持中的栅极电位施加到栅极,由此第一电流流到电池,并且在第二次刷新中,将高于保持时的栅极电位的第二电位施加到栅极,并且第三电位高于 保留中的栅极电位被施加到漏极,由此第二电流流到电池,并且电池的状态转移到平衡状态,其中在一个周期期间流动的第一和第二电流的量变得基本相等 。