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    • 4. 发明申请
    • FILM FOR FILM CAPACITOR
    • 电影电容胶片
    • US20120094070A1
    • 2012-04-19
    • US12973753
    • 2010-12-20
    • Kazuhiro SUZUKIKenro TakizawaMasaru YoneyamaJunya Ishida
    • Kazuhiro SUZUKIKenro TakizawaMasaru YoneyamaJunya Ishida
    • B32B3/00
    • H01G4/18C08J5/18C08J2379/08Y10T428/24355
    • A film for film capacitors having a thickness of 10 microns or less, wherein the film has surface properties of (Ra) of 0.2 microns or less, (Rz/Ra) of 10 or less and a dynamic friction coefficient of 1.5 or less, where (Ra) is an arithmetic average roughness and (Rz) is a maximum height defined both by the method specified in JIS B 0601 2001. The film can be manufactured by the successive steps of: mixing and preparing a forming material composed of a thermoplastic resin composition; melting and extruding the forming material to a film through a T-die; pinching and cooling the film between a pressure roll and a cooling roll having a rough surface for forming a rough surface to the film; and rolling up the cooled film onto a winding tube in a winding unit.
    • 一种薄膜电容器薄膜,其厚度为10微米或更小,其中该薄膜的表面特性为(Ra)为0.2微米或更小,(Rz / Ra)为10或更小,动摩擦系数为1.5或更小,其中 (Ra)是算术平均粗糙度,(Rz)是通过JIS B 0601 2001中规定的方法限定的最大高度。该膜可以通过以下连续步骤制造:混合和制备由热塑性树脂 组成; 通过T型模头将成形材料熔融并挤出成膜; 在具有用于形成粗糙表面的粗糙表面的压力辊和冷却辊之间夹持和冷却所述膜; 并将冷却的膜卷绕到卷绕单元中的卷绕管上。
    • 7. 发明授权
    • Method for manufacturing resin film for thin film-capacitor and the film therefor
    • 薄膜电容器用树脂薄膜及其薄膜的制造方法
    • US08524133B2
    • 2013-09-03
    • US12917145
    • 2010-11-01
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • D01D5/16
    • B29C47/886B29C47/0021B29C47/14B29C47/8845B29K2079/085B29K2105/256C08G73/1046C08L79/08
    • The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
    • 本发明提供一种薄膜电容器用薄膜的制造方法,其可以制造薄膜电容器薄膜,该薄膜电容器的厚度为10μm以下,耐热性优异,高厚度的耐电压性优异 通过使用聚醚酰亚胺树脂的精度,并提供薄膜电容器的膜。 上述制造方法包括以下步骤:将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中,将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出,插入 用于在压辊31和冷却辊33之间的薄膜电容器用薄膜50,在卷绕设备40上冷却并卷绕厚度为10um以下的薄膜电容器的冷却薄膜50,其中假设剪切 将T形块20的唇部21中的熔融成型材料1的速度设定为γ[/ s],将冷却辊33的圆周速度设定为V [m / s],将比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。