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    • 1. 发明申请
    • METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR
    • 薄膜电容器及其膜的制造树脂薄膜的方法
    • US20110117348A1
    • 2011-05-19
    • US12917145
    • 2010-11-01
    • Kenro TAKIZAWAYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • Kenro TAKIZAWAYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • B32B3/00B29C47/12
    • B29C47/886B29C47/0021B29C47/14B29C47/8845B29K2079/085B29K2105/256C08G73/1046C08L79/08
    • The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
    • 本发明提供一种薄膜电容器用薄膜的制造方法,其可以制造厚度为10μm以下的薄膜电容薄膜,其耐热性和耐高压性优异 通过使用聚醚酰亚胺树脂的精度,并提供薄膜电容器的膜。 上述制造方法包括以下步骤:将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中,将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出,插入 用于压辊31和冷却辊33之间的薄膜电容器用薄膜50,在卷绕设备40上冷却并卷绕厚度为10μm以下的薄膜电容器的冷却薄膜50,其中假设剪切 T模20的唇部21中的熔融成型材料1的比例设定为γ[/ s],冷却辊33的圆周速度设定为V [m / s],比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。
    • 2. 发明授权
    • Method for manufacturing resin film for thin film-capacitor and the film therefor
    • 薄膜电容器用树脂薄膜及其薄膜的制造方法
    • US08524133B2
    • 2013-09-03
    • US12917145
    • 2010-11-01
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • Kenro TakizawaYuzo MoriokaKazuhiro SuzukiMichimasa Ote
    • D01D5/16
    • B29C47/886B29C47/0021B29C47/14B29C47/8845B29K2079/085B29K2105/256C08G73/1046C08L79/08
    • The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
    • 本发明提供一种薄膜电容器用薄膜的制造方法,其可以制造薄膜电容器薄膜,该薄膜电容器的厚度为10μm以下,耐热性优异,高厚度的耐电压性优异 通过使用聚醚酰亚胺树脂的精度,并提供薄膜电容器的膜。 上述制造方法包括以下步骤:将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中,将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出,插入 用于在压辊31和冷却辊33之间的薄膜电容器用薄膜50,在卷绕设备40上冷却并卷绕厚度为10um以下的薄膜电容器的冷却薄膜50,其中假设剪切 将T形块20的唇部21中的熔融成型材料1的速度设定为γ[/ s],将冷却辊33的圆周速度设定为V [m / s],将比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。
    • 5. 发明申请
    • METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR
    • 薄膜电容器及其膜的制造树脂薄膜的方法
    • US20110299222A1
    • 2011-12-08
    • US12980962
    • 2010-12-29
    • Kazuhiro SUZUKITakashi GondaNorimasa ShinadaYuzo Morioka
    • Kazuhiro SUZUKITakashi GondaNorimasa ShinadaYuzo Morioka
    • H01G4/08B29C47/88H01G4/00
    • H01G4/14B29C48/08B29C48/28B29C48/914B29C48/9155B29K2079/085B29K2227/12B29L2031/3406H01G4/18H01G13/00
    • The present invention provides a method for manufacturing a film for a film capacitor in which a film can be prepared by melt extrusion molding in a thin film having a thickness of 10 μm or less and in which a cost can be cut by simplifying a manufacturing step thereof and a film for a film capacitor. It is a method for manufacturing a film for a film capacitor comprising the steps of charging a melt extrusion molding equipment 10 with a molding material 1 to mold a film 20 for a film capacitor by extruding from a dice 12, interposing the above extruded and molded film 20 for a film capacitor between a pressing roll 31 and a metal roll 32 to cool it and winding up the cooled film 20 for a film capacitor having a thickness of 10 μm or less in order on a winding tube 41 of a winding device 40, wherein the molding material 1 is prepared by adding a fluorocarbon resin to a PEI resin having a glass transition point of 200° C. or higher and a dielectric breakdown voltage of 100 V/μm or more; and a uniaxial elongational viscosity of the above molding material 1 is controlled to a range of 6,000 to 20,000 Pa·s.
    • 本发明提供一种薄膜电容器薄膜的制造方法,其中可以通过熔融挤出成型制备厚度为10μm以下的薄膜的膜,并且通过简化制造步骤可以削减成本 和薄膜电容器用薄膜。 作为薄膜电容器用薄膜的制造方法,其特征在于,包括以下步骤:将熔融挤出成形装置10与成型材料1进行充填,从模具12挤出成形薄膜电容器膜20,插入上述挤出成形品 薄膜20用于压辊31和金属辊32之间的薄膜电容器,以在卷绕装置40的卷绕管41上依次卷绕冷却薄膜20并卷绕厚度为10μm以下的薄膜电容器的冷却膜20 其中,通过向玻璃化转变点为200℃以上,介电击穿电压为100V /μm以上的PEI树脂中添加碳氟化合物树脂,制备成型材料1。 将上述成型材料1的单轴拉伸粘度控制在6000〜20000Pa·s的范围。