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    • 1. 发明申请
    • Low alloy steel
    • 低合金钢
    • US20080156400A1
    • 2008-07-03
    • US12073324
    • 2008-03-04
    • Takashi NakashimaKaori KawanoMasaaki Igarashi
    • Takashi NakashimaKaori KawanoMasaaki Igarashi
    • C22C38/22
    • C21C7/0006C21C7/06C22C38/005C22C38/02C22C38/04C22C38/22
    • According to a low alloy steel of the present invention, compositional elements thereof are limited, and a metal structure thereof comprises bainite or martensite. Further, a proper amounts of Nd inclusions are formed by appropriately selecting timings of deoxidation and Nd addition in melting a steel. Consequently, compatibility between high-temperature creep strength and long-term creep ductility, which is hardly established in conventional steels, can be achieved even in hostile conditions. Accordingly, the low alloy steel of the present invention can be widely applied as the material for the heat-resistant structural member used for a long time under the high-temperature and high-pressure conditions such as power plant boilers, turbines, and nuclear power plants.
    • 根据本发明的低合金钢,其组成元素受到限制,其金属结构包括贝氏体或马氏体。 此外,通过在钢中熔融时适当选择脱氧和Nd添加的定时,形成适量的Nd夹杂物。 因此,即使在恶劣的条件下,也可以实现在常规钢中难以确定的高温蠕变强度与长期蠕变延展性之间的相容性。 因此,本发明的低合金钢可以广泛地用作在高温高压条件下长时间使用的耐火构件的材料,例如发电厂锅炉,涡轮机和核能 植物。
    • 2. 发明授权
    • Low alloy steel
    • 低合金钢
    • US07935303B2
    • 2011-05-03
    • US12073324
    • 2008-03-04
    • Takashi NakashimaKaori KawanoMasaaki Igarashi
    • Takashi NakashimaKaori KawanoMasaaki Igarashi
    • C22C38/00C22C38/22
    • C21C7/0006C21C7/06C22C38/005C22C38/02C22C38/04C22C38/22
    • According to a low alloy steel of the present invention, compositional elements thereof are limited, and a metal structure thereof comprises bainite or martensite. Further, proper amounts of Nd inclusions are formed by appropriately selecting timings of deoxidation and Nd addition in melting a steel. Consequently, compatibility between high-temperature creep strength and long-term creep ductility, which is hardly established in conventional steels, can be achieved even in hostile conditions. Accordingly, the low alloy steel of the present invention can be widely applied as the material for the heat-resistant structural member used for a long time under the high-temperature and high-pressure conditions such as power plant boilers, turbines, and nuclear power plants.
    • 根据本发明的低合金钢,其组成元素受到限制,其金属结构包括贝氏体或马氏体。 此外,通过在钢中熔融时适当选择脱氧和Nd添加的定时,形成适量的Nd夹杂物。 因此,即使在恶劣的条件下,也可以实现在常规钢中难以确定的高温蠕变强度与长期蠕变延展性之间的相容性。 因此,本发明的低合金钢可以广泛地用作在高温高压条件下长时间使用的耐火构件的材料,例如发电厂锅炉,涡轮机和核能 植物。
    • 5. 发明授权
    • Gas sensor
    • 气体传感器
    • US07607340B2
    • 2009-10-27
    • US11832855
    • 2007-08-02
    • Takashi NakashimaYuichi Yamada
    • Takashi NakashimaYuichi Yamada
    • G01N9/00
    • G01N27/4077
    • In a protector (100) for protecting a detecting portion (11) of a sensor element (10) of a gas sensor (1), the opening area of individual inner introduction holes (130) and (140) formed in an inner protector (120) is 3.5 mm2 or less. In this manner, the amount and size of water droplets able to pass through the inner introduction holes (130) and (140) and to adhere to the sensor element (10) is restricted. In order to ensure good gas replaceability between the interior and the exterior of the inner protector (120) so as to attain quick gas response, the total opening area of the inner introduction holes (130) and (140) is 10 mm2 or more.
    • 在用于保护气体传感器(1)的传感器元件(10)的检测部分(11)的保护器(100)中,形成在内部保护器(1)中的各个内部引入孔(130)和(140) 120)为3.5mm 2以下。 以这种方式,可以限制能够穿过内部引入孔(130)和(140)并粘附到传感器元件(10)的水滴的量和尺寸。 为了确保内部保护器(120)的内部和外部之间的良好的气体可更换性,以便获得快速的气体响应,内部导入孔(130)和(140)的总开口面积为10mm 2以上。
    • 6. 发明授权
    • Gas sensor
    • 气体传感器
    • US07560012B2
    • 2009-07-14
    • US10525816
    • 2003-08-27
    • Takafumi ShichidaTakaya YoshikawaTakashi NakashimaSatoshi Ishikawa
    • Takafumi ShichidaTakaya YoshikawaTakashi NakashimaSatoshi Ishikawa
    • G01N27/407G01N27/406G01N27/26
    • G01N27/4077
    • A gas sensor is constructed as follows. A protector (4) covering around a gas sensing element (2) has an inner hollow-cylindrical portion (6) and an outer hollow-cylindrical portion (7) that is provided coaxially with the inner hollow-cylindrical portion (6) with an air space (8) in between. Outer-wall gas inlet openings (13) are formed in the outer hollow-cylindrical portion (7), and guiding bodies (10) extending inward are attached to the outer-wall gas inlet openings (13). Inner-wall gas inlet openings (11) are formed in the inner hollow-cylindrical portion (6) at positions nearer to the gas sensing element (2) than the outer-wall gas inlet openings (13). A side wall (9) face of the inner hollow-cylindrical portion (6) opposite the outer-wall gas inlet openings (13) is formed so as to be parallel to a side wall (12) of the outer-hollow cylindrical portion (7) or so as to have a slop-like shape with a diameter enlarging in the axial direction toward a bottom wall (17) of the protector (4). A discharge opening (15) for a gas to be measured is formed in the bottom wall (17).
    • 气体传感器的构造如下。 覆盖在气体感测元件(2)周围的保护器(4)具有内部中空圆柱形部分(6)和与内部中空圆柱形部分(6)同轴设置的外部中空圆柱形部分(7) 空中(8)之间。 外壁气体入口(13)形成在外中空圆柱形部分(7)中,并且向内延伸的引导体(10)附接到外壁气体入口(13)。 内壁气体入口(11)在外壁气体入口(13)的内中空圆筒部(6)的位置处形成在比气体检测元件(2)更靠近的位置处。 与外壁气体入口(13)相对的内部中空圆筒部分(6)的侧壁(9)的表面形成为平行于外部中空圆柱形部分的侧壁(12) 7),以具有朝向保护器(4)的底壁(17)在轴向方向上扩大的直径的倾斜形状。 在底壁(17)中形成用于待测气体的排出口(15)。
    • 9. 发明申请
    • Gas sensor
    • 气体传感器
    • US20050241937A1
    • 2005-11-03
    • US10525816
    • 2003-08-27
    • Takafumi ShichidaTakaya YoshikawaTakashi NakashimaSatoshi Ishikawa
    • Takafumi ShichidaTakaya YoshikawaTakashi NakashimaSatoshi Ishikawa
    • G01N27/407G01N27/26
    • G01N27/4077
    • A gas sensor is constructed as follows. A protector (4) covering around a gas sensing element (2) has an inner hollow-cylindrical portion (6) and an outer hollow-cylindrical portion (7) that is provided coaxially with the inner hollow-cylindrical portion (6) with an air space (8) in between. Outer-wall gas inlet openings (13) are formed in the outer hollow-cylindrical portion (7), and guiding bodies (10) extending inward are attached to the outer-wall gas inlet openings (13). Inner-wall gas inlet openings (11) are formed in the inner hollow-cylindrical portion (6) at positions nearer to the gas sensing element (2) than the outer-wall gas inlet openings (13). A side wall (9) face of the inner hollow-cylindrical portion (6) opposite the outer-wall gas inlet openings (13) is formed so as to be parallel to a side wall (12) of the outer-hollow cylindrical portion (7) or so as to have a slop-like shape with a diameter enlarging in the axial direction toward a bottom wall (17) of the protector (4). A discharge opening (15) for a gas to be measured is formed in the bottom wall (17).
    • 气体传感器的构造如下。 覆盖在气体感测元件(2)周围的保护器(4)具有内部中空圆柱形部分(6)和与内部中空圆柱形部分(6)同轴设置的外部中空圆柱形部分(7) 空中(8)之间。 外壁气体入口(13)形成在外中空圆柱形部分(7)中,并且向内延伸的引导体(10)附接到外壁气体入口(13)。 内壁气体入口(11)在外壁气体入口(13)的内中空圆筒部(6)的位置处形成在比气体检测元件(2)更靠近的位置处。 与外壁气体入口(13)相对的内部中空圆筒部分(6)的侧壁(9)的表面形成为平行于外部中空圆柱形部分的侧壁(12) 7),以具有朝向保护器(4)的底壁(17)在轴向方向上扩大的直径的倾斜形状。 在底壁(17)中形成用于待测气体的排出口(15)。
    • 10. 发明授权
    • Bipolar transistor with collector diffusion layer formed deep in the substrate
    • 具有集电极扩散层的双极晶体管形成在衬底的深处
    • US06469366B1
    • 2002-10-22
    • US09714112
    • 2000-11-17
    • Takashi NakashimaAtsushi Tominaga
    • Takashi NakashimaAtsushi Tominaga
    • H01L27082
    • H01L29/0821H01L27/0705H01L29/732
    • A semiconductor device allowing reduction in area occupied by a bipolar transistor as well as a method of manufacturing the same are obtained. The semiconductor device includes a substrate, first conductivity type regions, a collector region, base regions and emitter regions. The first conductivity type region is formed on the substrate, and has a main surface. The collector region is formed in the first conductivity type region. The base region is located in the first conductivity type region and on the collector region. The emitter region is located in the first conductivity type region and on the base region. The first conductivity type region is provided with grooves extending to the collector region, and isolation grooves disposed around a vertical bipolar transistor. The grooves are filled with conductors of the second conductivity type. The isolation grooves are filled with isolation conductors of the second conductivity type.
    • 可以获得允许减小由双极晶体管占据的面积的半导体器件及其制造方法。 半导体器件包括衬底,第一导电类型区域,集电极区域,基极区域和发射极区域。 第一导电类型区域形成在基板上,并且具有主表面。 集电极区域形成在第一导电类型区域中。 基极区域位于第一导电类型区域和集电极区域。 发射极区域位于第一导电类型区域和基极区域中。 第一导电类型区域设置有延伸到集电极区域的沟槽和设置在垂直双极晶体管周围的隔离沟槽。 凹槽填充有第二导电类型的导体。 隔离槽填充有第二导电类型的隔离导体。