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    • 2. 发明申请
    • Semiconductor device manufacturing method and semiconductor device
    • 半导体器件制造方法和半导体器件
    • US20100084713A1
    • 2010-04-08
    • US12311428
    • 2007-09-27
    • Takashi NakagawaToru TatsumiKenzo ManabeKensuke TakahashiMakiko Oshida
    • Takashi NakagawaToru TatsumiKenzo ManabeKensuke TakahashiMakiko Oshida
    • H01L27/092H01L21/8238
    • H01L21/823835H01L21/28079H01L21/823842H01L29/4975H01L29/66545H01L29/7833
    • A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process.
    • 提供第二掩模以覆盖第二栅极图案,并且将第一栅极图案加热到含有第一金属的材料气体热分解的温度,构成第一栅极图案的多晶硅与第一金属进行硅化反应 第一金属层不沉积的条件,因此第一栅极图案变成由第一金属的硅化物构成的第一栅电极。 在去除第二掩模之后,提供第一掩模以覆盖第一电极,并且将第二栅极图案加热到材料气体热分解的温度,构成第二栅极图案的多晶硅与第一金属反应, 在第一金属层不沉积的条件下进行硅化,因此第二栅极图案变成由第一金属的硅化物构成的第二栅电极。 然后,删除第一个掩模。 通过这样的制造方法,不添加退火处理而形成硅化物层。