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1. 发明授权

US06519999B2 Meter having pointer-zero-position adjusting function 有权
公开(公告)号：US06519999B2
公开(公告)日：2003-02-18
申请号：US09885194
申请日：2001-06-21
申请人： Takashi Komura , Hideki Asano
发明人： Takashi Komura , Hideki Asano
IPC分类号： G01R1700
CPC分类号： G01R7/06
摘要： A meter such as a speedometer for use in an automobile instrument panel includes a pointer driven by a stepping motor. A pulse voltage having a wider pulse width is supplied to the stepping motor to obtain a higher induced voltage to be compared with a threshold voltage for detecting the pointer-zero-position. After the pointer-zero-position is detected, the stepping motor is driven by a pulse voltage having a narrower pulse width to obtain a quicker response of the pointer. In this manner, the pointer-zero-position is accurately adjusted without sacrificing the quick response of the meter pointer.

2. 发明授权

US07362786B2 Semiconductor laser element having tensile-strained quantum-well active layer 失效
标题翻译：具有拉伸应变量子阱活性层的半导体激光元件
公开(公告)号：US07362786B2
公开(公告)日：2008-04-22
申请号：US11073521
申请日：2005-03-08
申请人： Hideki Asano
发明人： Hideki Asano
IPC分类号： H01S5/00
CPC分类号： H01S5/34326 , B82Y20/00 , H01S5/0287 , H01S5/06226 , H01S5/1039 , H01S5/2222 , H01S5/2231 , H01S5/3403
摘要： In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch Δa/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, −0.6%≦Δa/a≦−0.3% and 10 nm≦dw≦20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc≧400 μm and Rf×Rr≧0.5.
摘要翻译：在半导体激光元件中，第一导电类型的AlGaInP的下包层，AlGaInP的下光波导层，InGaP的量子阱有源层，AlGaInP的上光波导层和AlGaInP的上包层的第二导电类型的第一导电类型的GaAs衬底上依次形成。量子阱有源层的失配度Δa/ a与衬底和厚度dw满足条件，-0.6％<=Δa/ a <= -0.3％和10nm <= dw <= 20nm。此外，相对端面的谐振器长度Lc和反射率Rf和Rr满足条件Lc> =400μm和RfxRr≥0.5。

3. 发明申请

US20080029060A1 Throttle Body, Method Of Adjusting Opening Of Opener, And Method Of Manufacturing Throttle Body 有权
标题翻译：节气门体，调节开启器开度的方法，以及制作节气门体的方法
公开(公告)号：US20080029060A1
公开(公告)日：2008-02-07
申请号：US11597330
申请日：2005-05-31
申请人： Tsutomu Ikeda , Hideki Asano , Mamoru Tateishi , Toshiyuki Masui , Koichi Suzuki , Takashi Tsuge , Tuneaki Aoki , Mikiharu Yoshizaka , Masashi Ozeki
发明人： Tsutomu Ikeda , Hideki Asano , Mamoru Tateishi , Toshiyuki Masui , Koichi Suzuki , Takashi Tsuge , Tuneaki Aoki , Mikiharu Yoshizaka , Masashi Ozeki
IPC分类号： F02D9/08
CPC分类号： F02D9/107 , B29C45/1671 , B29C2045/1673 , B29L2031/7506 , F02D9/1045 , F02D9/106 , F02D9/1065 , F02D9/108 , F16K1/221 , Y10T29/49298 , Y10T29/49307 , Y10T29/49314 , Y10T29/49409 , Y10T29/4998
摘要： A throttle body (2) includes a resin main body (3) defining a bore (7) through which intake air flows, a valve body (60) having a shaft part (20) rotatably supported by the resin body (3) and a valve part (4) for opening and closing the bore (7) of the main body (3), and a resin cover body (40) attached to the main body (3). The cover body (4) is attached to the main body (3) by welding.
摘要翻译：节气门体（2）包括限定进入空气流过的孔（7）的树脂主体（3），具有由树脂体（3）可旋转地支撑的轴部（20）的阀体（60）和用于打开和关闭主体（3）的孔（7）的阀部分（4）和附接到主体（3）的树脂盖体（40）。盖体（4）通过焊接附接到主体（3）。

4. 发明申请

US20070228394A1 Semiconductor layer, process for forming the same, and semiconductor light emitting device 有权
标题翻译：半导体层，其形成工艺和半导体发光器件
公开(公告)号：US20070228394A1
公开(公告)日：2007-10-04
申请号：US11730459
申请日：2007-04-02
申请人： Hideki Asano
发明人： Hideki Asano
IPC分类号： H01L33/00 , H01L31/12 , H01L29/205 , H01L27/15 , H01L29/26 , H01L29/267
CPC分类号： H01L27/153 , C30B25/105 , C30B29/403 , H01L21/02403 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L24/32 , H01L33/007 , H01L33/06 , H01L33/08 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor layer contains, as a principal constituent, a Group III-V semiconductor compound, which may be represented by the general formula: AlxGayInzN, wherein x represents a number satisfying the condition 0≦x
摘要翻译：半导体层含有作为主要成分的III-V族半导体化合物，其可以由以下通式表示：其中Z 1，Y 2， N，其中x表示满足条件0 <= x <1的数，y表示满足条件0

5. 发明申请

US20070186900A1 Throttle control apparatus for internal combustion engine 有权
标题翻译：内燃机节气门控制装置
公开(公告)号：US20070186900A1
公开(公告)日：2007-08-16
申请号：US11705514
申请日：2007-02-13
申请人： Hideki Asano , Katsumi Ishida , Tsutomu Miyazaki , Kazuhiro Minamitani , Shigeru Kamio , Akihiro Kamiya
发明人： Hideki Asano , Katsumi Ishida , Tsutomu Miyazaki , Kazuhiro Minamitani , Shigeru Kamio , Akihiro Kamiya
IPC分类号： F02D11/10
CPC分类号： F02D11/107 , F02D11/106 , F02D2011/108
摘要： A throttle control apparatus comprises a throttle valve placed in an intake passage, a motor for driving the throttle valve, an electronic control unit (ECU) for controlling the motor, and a throttle sensor for detecting an actual opening degree of the throttle valve. The ECU determines that the throttle valve is frozen when the actual opening degree does not reach a target opening degree even after a driving time for driving the motor has exceeded a predetermined time, and then stores the actual opening degree at the time as an icing opening degree. The ECU supplies a driving duty to cause the motor to produce required driving torque for removal of icing and reverses the driving duty by open control, and controls the motor to bring an accumulated value of a deviation between the target opening degree and the icing opening degree to zero, thereby repeatedly swinging the throttle valve.
摘要翻译：节气门控制装置包括放置在进气通道中的节流阀，用于驱动节气门的电动机，用于控制电动机的电子控制单元（ECU）和用于检测节流阀的实际开度的节气门传感器。即使在用于驱动电机的驱动时间超过预定时间之后，即使实际开度尚未达到目标开度，ECU判定为节流阀被冻结，然后将当时的实际开度作为结冰口度。 ECU提供驱动责任，使电动机产生除去结冰所需要的驱动力矩，并通过开启控制来反转驱动责任，并控制电动机使目标开度和结冰开度之间的偏差累积值从而使节流阀反复摆动。

6. 发明授权

US09816684B2 Light emitting device, cell for light emitting device, and method for manufacturing light emitting device 有权
公开(公告)号：US09816684B2
公开(公告)日：2017-11-14
申请号：US13822643
申请日：2011-10-18
申请人： Hideki Asano , Masanori Wada
发明人： Hideki Asano , Masanori Wada
IPC分类号： F21V9/16 , C09K11/88 , B32B17/06 , C03C27/10 , B82Y20/00
CPC分类号： F21V9/30 , B32B17/06 , B82Y20/00 , C03C27/10 , C09K11/883 , Y10S977/774 , Y10S977/95
摘要： Provided are a long-life light emitting device less likely to degrade luminescence properties over time, a method for manufacturing the same, and a cell for a light emitting device used for the same. A light emitting device 1 includes a cell 10 and a luminescent material encapsulated in the cell 10. The cell 10 includes a pair of glass sheets 12 and 13 and a glass-made fused part 14a. The pair of glass sheets 12 and 13 are disposed to face each other with a space therebetween. The fused part 14a is disposed between respective peripheral portions of the pair of glass sheets 12 and 13. The fused part 14a is fused to each of the pair of glass sheets 12 and 13.

7. 发明申请

US20140162387A1 METHOD FOR PRODUCING CELL FOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE 有权
标题翻译：用于生产用于发光装置的电池的方法和用于生产发光装置的方法
公开(公告)号：US20140162387A1
公开(公告)日：2014-06-12
申请号：US14128637
申请日：2012-05-24
申请人： Hideki Asano , Masanori Wada
发明人： Hideki Asano , Masanori Wada
IPC分类号： H01L33/50 , H01L33/00
CPC分类号： H01L33/50 , B32B17/06 , C03B23/203 , C03C27/06 , C09K11/883 , H01L33/005 , H01L33/505 , H01L33/507 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： Provided is a method whereby a cell for a light-emitting device less variable in the thickness of the internal space can be suitably produced with high production efficiency. A glass-made fused part forming element (25) is provided in a grid-like pattern between a pair of glass sheet base materials (21, 24) disposed facing each other with a space therebetween. The fused part forming element (25) is fused to each of the pair of glass sheet base materials (21, 24) to produce a cell base material (30) having a grid-like fused part (26). The cell base material (30) is cut along each of row and column directions of the grid-like fused part (26) to produce a plurality of light-emitting devices (1). Portions off the grid-like fused part forming element (25) along a first direction are formed of glass ribbons (22) and portions of the grid-like fused part forming element (25) along a second direction are formed of glass paste.
摘要翻译：提供一种可以以高生产效率适当地制造用于内部空间厚度变化较小的发光装置的电池的方法。玻璃制的熔融部形成元件（25）以格子状形成在相对配置的一对玻璃基材（21,24）之间，并具有间隔的空间。熔融部形成元件（25）与所述一对玻璃基材（21,24）中的每一个熔合，以制造具有格栅状熔融部（26）的电池基材（30）。电池基材（30）沿栅格状熔融部分（26）的行方向和列方向被切割，以产生多个发光器件（1）。沿着第一方向离开网状熔融部分形成元件（25）的部分由玻璃带（22）形成，并且格栅状熔融部分形成元件（25）的沿着第二方向的部分由玻璃浆料形成。

8. 发明申请

US20140133159A1 CELL FOR LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE 有权
标题翻译：用于发光装置和发光装置的单元
公开(公告)号：US20140133159A1
公开(公告)日：2014-05-15
申请号：US14128638
申请日：2012-05-24
申请人： Hideki Asano , Masanori Wada
发明人： Hideki Asano , Masanori Wada
IPC分类号： G02B7/00 , F21V9/16
CPC分类号： G02B7/006 , C03B23/245 , C09K11/883 , F21V9/30
摘要： The present invention can further increase the efficiency of light extraction from the light exit surface of a light-emitting device. A cell (10) for a light-emitting device includes: a first main wall (10a) and a second main wall (10b) which are disposed facing each other with a distance therebetween; and a sidewall (10c). The sidewall (10c) connects the first main wall (10a) and the second main wall (10b). The sidewall (10c) defines, together with the first and second main walls (10a, 10b), an internal space (10A) into which a luminescent substance is to be encapsulated. A portion of the sidewall (10c) located laterally of the internal space (10A) is white.
摘要翻译：本发明可以进一步提高从发光装置的光出射面的光提取效率。用于发光装置的电池（10）包括：第一主壁（10a）和第二主壁（10b），它们彼此面对地设置; 和侧壁（10c）。侧壁（10c）连接第一主壁（10a）和第二主壁（10b）。侧壁（10c）与第一和第二主壁（10a，10b）一起限定要封装发光物质的内部空间（10A）。位于内部空间（10A）侧面的侧壁（10c）的一部分是白色的。

9. 发明授权

US07531778B2 Nano tube photo detecting device 有权
标题翻译：纳米管光检测装置
公开(公告)号：US07531778B2
公开(公告)日：2009-05-12
申请号：US11521500
申请日：2006-09-15
申请人： Hideki Asano
发明人： Hideki Asano
IPC分类号： H01J40/14
CPC分类号： H01L27/1446 , B82Y10/00 , H01L31/0352
摘要： A photo detecting device comprises a photo-electron generating body, which absorbs light and generates photo-electrons, and a transistor, across which an electric current flows in accordance with a quantity of the photo-electrons having been generated by the photo-electron generating body. An electrical insulator is formed on a surface of the photo-electron generating body. The transistor is provided with a source electrode and a drain electrode, which are formed on the electrical insulator having been formed on the surface of the photo-electron generating body. The source electrode and the drain electrode of the transistor are connected with each other via a channel section containing a nano-tube having electrically conductive or semi-conductive characteristics.
摘要翻译：光检测装置包括吸收光并产生光电子的光电子产生体，以及晶体管，电流根据由光电子产生产生的光电子的数量流过电流身体。在光电子发生体的表面上形成电绝缘体。晶体管设置有形成在已经形成在光电子发生体的表面上的电绝缘体上的源电极和漏电极。晶体管的源电极和漏电极通过包含具有导电或半导电特性的纳米管的沟道部彼此连接。

10. 发明授权

US5974067A Semiconductor laser and method of manufacturing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5974067A
公开(公告)日：1999-10-26
申请号：US815083
申请日：1997-03-11
申请人： Hideki Asano
发明人： Hideki Asano
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/44 , H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/209
摘要： A semiconductor laser has a first conduction type clad layer, an active layer and a second conduction type clad layer formed on a first conduction type semiconductor substrate in this order. An inverted mesa-shaped ridge is formed on a part of the second conduction type clad layer and a first conduction type current stopping layer is formed on each side of the ridge. Each side of the inverted mesa-shaped ridge is curved into a concave surface in a plane perpendicular to the longitudinal direction of the ridge.
摘要翻译：半导体激光器依次形成在第一导电型半导体衬底上的第一导电型覆盖层，有源层和第二导电型覆盖层。在第二导电型包覆层的一部分上形成倒置的台面形状的脊，并且在脊的每一侧上形成第一导电型电流停止层。倒立的台面形状的脊的每一侧在垂直于脊的纵向方向的平面中弯曲成凹面。

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