专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06448372B2 Process for producing vinyl chloride polymer with low residual monomer 失效
标题翻译：生产具有低残留单体的氯乙烯聚合物的方法
公开(公告)号：US06448372B2
公开(公告)日：2002-09-10
申请号：US09764093
申请日：2001-01-19
申请人： Takashi Kobayashi , Ryuichi Saito , Yoshinori Nakahara , Tadashi Amano , Ichiro Hara
发明人： Takashi Kobayashi , Ryuichi Saito , Yoshinori Nakahara , Tadashi Amano , Ichiro Hara
IPC分类号： C08F624
CPC分类号： C08F6/003 , C08F14/06 , C08L27/06 , C08F2/18
摘要： A process for producing a vinyl chloride polymer, including the steps of (a) subjecting a vinyl chloride monomer alone or a monomer mixture containing a vinyl chloride, to suspension polymerization in water; (b) subjecting the resultant vinyl chloride polymer slurry to stripping to remove an unreacted monomer remaining therein; and (c) dehydrating the polymer slurry having been subjected to stripping. In the polymerization step (a), the ratio of water/monomer is set in a weight ratio of from 0.80 to 1.50, and the viscosity at 20° C. of the polymer slurry to be fed to the stripping step is previously kept adjusted to 0.30 Pa·s or lower. In the stripping step (c), the residual unreacted monomer in the polymer slurry can efficiently be removed using steam in a smaller quantity, thus the vinyl chloride polymer can be produced at a high productivity.
摘要翻译：一种制备氯乙烯聚合物的方法，包括以下步骤：（a）使单独的氯乙烯单体或含有氯乙烯的单体混合物在水中悬浮聚合; （b）将得到的氯乙烯聚合物浆料进行汽提以除去其中残留的未反应单体; 和（c）使经过剥离的聚合物浆料脱水。在聚合步骤（a）中，将水/单体的比例设定为0.80至1.50的重量比，并将预先进料到汽提步骤的聚合物浆料的20℃下的粘度预先保持在 0.30 Pa.s以下。在汽提步骤（c）中，聚合物淤浆中残留的未反应单体可以用较少量的蒸汽有效地除去，从而可以高生产率生产氯乙烯聚合物。

2. 发明授权

US6037428A Polymerization of vinyl chloride with peroxide mixtures 失效
标题翻译：氯乙烯与过氧化物混合物的聚合
公开(公告)号：US6037428A
公开(公告)日：2000-03-14
申请号：US55821
申请日：1998-04-06
申请人： Ryuichi Saito , Tadashi Amano
发明人： Ryuichi Saito , Tadashi Amano
IPC分类号： C08F4/38 , C08F14/06
CPC分类号： C08F14/06
摘要： Suspension polymerization of vinyl chloride in an aqueous medium is carried out in the presence of an oil-soluble polymerization initiator which is a combination of diacylperoxide compound and t-hexylperoxy diglycolate, the former having a half-life period of 10 hours at 30 to 50.degree. C. in benzene (0.05 mol/L). The resulting polymer gives a high-quality molded product which is free of odor and less liable to initial discoloration.
摘要翻译：在水性介质中的氯乙烯的悬浮聚合在油溶性聚合引发剂的存在下进行，该油溶性聚合引发剂是二酰基过氧化物化合物和叔己基过氧化二乙酸酯的组合，前者在30至50℃下具有10小时的半衰期苯（0.05mol / L）。得到的聚合物产生高品质的成型产品，其不含气味，并且不易初始变色。

3. 发明授权

US06677409B2 Method of producing vinyl-based polymer 失效
标题翻译：乙烯基类聚合物的制造方法
公开(公告)号：US06677409B2
公开(公告)日：2004-01-13
申请号：US10122304
申请日：2002-04-16
申请人： Ryuichi Saito , Tadashi Amano
发明人： Ryuichi Saito , Tadashi Amano
IPC分类号： C08F240
CPC分类号： C08F2/40
摘要： A method of producing a vinyl-based polymer is provided in which the blocking of piping resulting from solidification of a reaction inhibitor does not occur even if the operation of supplying the reaction inhibitor is conducted at a low temperature. This method involves the polymerization of a vinyl monomer via a radical reaction, wherein a reaction inhibitor formed from a compound represented by a general formula (1), shown below, is added to the polymerization system in the form of an aqueous dispersion, either prior to commencement of the polymerization, during the polymerization, or following completion of the polymerization, depending on the effect desired. R represents an alkyl group of 3 to 6 carbon atoms.
摘要翻译：提供了一种制备乙烯基类聚合物的方法，其中即使在低温下进行反应抑制剂的操作，也不会发生阻止由反应抑制剂固化产生的管道。该方法包括通过自由基反应聚合乙烯基单体，其中将由下述通式（1）表示的化合物形成的反应抑制剂以水分散体的形式加入到聚合体系中，先前根据所需的效果，聚合反应开始，聚合期间或聚合结束后，R表示3〜6个碳原子的烷基。

4. 发明授权

US06639027B2 Production process for vinyl-based polymer 失效
标题翻译：乙烯基聚合物的生产工艺
公开(公告)号：US06639027B2
公开(公告)日：2003-10-28
申请号：US10319550
申请日：2002-12-16
申请人： Ryuichi Saito , Tadashi Amano , Toshihiko Kawakubo
发明人： Ryuichi Saito , Tadashi Amano , Toshihiko Kawakubo
IPC分类号： C08F242
CPC分类号： C08F2/40 , C08F14/06 , Y10S526/91 , Y10S526/911 , C08F2/16
摘要： A production process for a vinyl-based polymer is provided. The production process comprises a step for polymerizing a vinyl-based monomer by a radical reaction within an aqueous medium in a polymerization vessel, and a step for supplying a reaction inhibitor with a melting point of no more than 40° C. from a reaction inhibitor supply tank to the polymerization vessel via a reaction inhibitor supply pipe. The reaction inhibitor supply tank and the reaction inhibitor supply pipe are heated, and the reaction inhibitor is added to the polymerization vessel in a liquid state with a viscosity of no more than 200 mPa·s. The reaction inhibitor can be added to the polymerization mixture without the use of an organic solvent even at low temperatures, and problems such as the solidification of the reaction inhibitor inside the supply tank or piping, and subsequent blocking of the piping do not occur.
摘要翻译：提供了一种乙烯基类聚合物的制造方法。制造方法包括在聚合容器内的水性介质中通过自由基反应聚合乙烯基类单体的步骤，以及从反应抑制剂供给不超过40℃的熔点的反应抑制剂的步骤通过反应抑制剂供应管向聚合容器供应罐。反应抑制剂供给槽和反应抑制剂供给管被加热，反应抑制剂以粘度不超过200mPa.s的液态加入到聚合容器中。反应抑制剂即使在低温下也可以不使用有机溶剂而添加到聚合混合物中，并且不会发生诸如供给罐或管道内的反应抑制剂的固化以及随后的管道堵塞等问题。

5. 发明授权

US5925721A Process for producing vinylidene fluoride resin 失效
标题翻译：偏二氟乙烯树脂的制造方法
公开(公告)号：US5925721A
公开(公告)日：1999-07-20
申请号：US25237
申请日：1998-02-18
申请人： Ryuichi Saito , Tadashi Amano
发明人： Ryuichi Saito , Tadashi Amano
IPC分类号： C08F2/44 , C08F2/00 , C08F14/22 , C08F214/22
CPC分类号： C08F214/22 , C08F14/22
摘要： In a process for producing a vinylidene fluoride resin by polymerizing vinylidene fluoride or a mixture of vinylidene fluoride and a vinyl monomer copolymerizable with vinylidene fluoride, a portion of an iodide compound represented by the formula: X-R.sub.f -X wherein R.sub.f is a divalent organic group containing at least two divalent fluoroalkyl ether groups: and X's are independently an iodine atom or a fluorine atom, provided that at least one of the X's is an iodine atom; is added to start the polymerization, and the remainder of the iodide compound is further added dividedly at least twice in the course of the polymerization. This process enables to obtain a vinylidene fluoride resin having a viscosity-average molecular weight of 150,000 or more and also having a superior water repellency. This resin has good mechanical strength and release properties and also can be well processed into films.
摘要翻译：在通过聚合偏二氟乙烯或偏二氟乙烯与可与偏二氟乙烯共聚的乙烯基单体的混合物制备偏二氟乙烯树脂的方法中，一部分由下式表示的碘化合物：X-Rf-X其中Rf是二价有机含有至少两个二价氟烷基醚基团的基团：X独立地为碘原子或氟原子，条件是X中的至少一个为碘原子; 加入以开始聚合，剩余的碘化合物在聚合过程中进一步加入至少两次。该方法能够得到粘均分子量为15万以上且具有优异的拒水性的偏二氟乙烯树脂。该树脂具有良好的机械强度和剥离性能，并且可以很好地加工成膜。

6. 发明申请

US20140118934A1 Power Semiconductor Module and Power Converter Using the Same 有权
标题翻译：功率半导体模块和使用它的电源转换器
公开(公告)号：US20140118934A1
公开(公告)日：2014-05-01
申请号：US14126955
申请日：2012-06-15
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
IPC分类号： H05K7/20
CPC分类号： H05K7/2089 , H01L23/367 , H01L23/4334 , H01L23/473 , H01L24/33 , H01L25/115 , H01L25/18 , H01L2224/32245 , H01L2924/07802 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H02M7/003 , H05K7/1432 , H05K7/209 , H01L2924/00 , H01L2924/00012
摘要： A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.
摘要翻译：功率半导体模块包括具有上臂电路部分的第一封装，具有下臂电路部分的第二封装，具有存储第一封装和第二封装的存储空间的金属外壳以及与存储空间连接的开口，以及将上臂电路部分与下臂电路部分连接的中间连接导体; 壳体包括通过存储空间面向第一辐射部分的第一辐射部分和第二辐射部分; 第一包装被布置成使得第一和第二包装件的布置方向可以平行于面向第一和第二辐射部分的相应表面; 并且中间连接导体将从第一封装延伸的发射极侧端子与从存储空间中的第二封装延伸的集电极侧端子耦合。

7. 发明申请

US20120282414A1 RUTHENIUM FILM-FORMING MATERIAL AND RUTHENIUM FILM-FORMING METHOD 有权
标题翻译：形成薄膜的成膜材料和成膜方法
公开(公告)号：US20120282414A1
公开(公告)日：2012-11-08
申请号：US13503899
申请日：2010-10-20
申请人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
发明人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
IPC分类号： C07F15/00 , B05D3/02 , B05D3/06 , B05D7/24
CPC分类号： C23C16/18 , C07C49/92 , C07F15/0046 , H01L21/76843 , H01L28/65
摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
摘要翻译：公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

8. 发明申请

US20120087095A1 Power Module and Power Conversion Device 有权
标题翻译：电源模块和电源转换装置
公开(公告)号：US20120087095A1
公开(公告)日：2012-04-12
申请号：US13266675
申请日：2010-04-16
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa
IPC分类号： H05K7/20 , H05K5/04
CPC分类号： H01L23/467 , B60K1/02 , B60K6/365 , B60K6/445 , B60L3/003 , B60L11/123 , B60L11/14 , B60L2200/10 , B60L2200/26 , B60L2200/32 , B60L2200/36 , B60L2220/12 , B60L2220/14 , B60L2240/36 , B60L2240/525 , C25D11/08 , C25D11/10 , C25D11/12 , H01L23/367 , H01L23/433 , H01L23/473 , H01L24/33 , H01L25/072 , H01L2224/73265 , H01L2224/83101 , H01L2224/8384 , H01L2924/01327 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H02M7/003 , Y02T10/6217 , Y02T10/6239 , Y02T10/7077 , H01L2924/00
摘要： A power module according to the present invention includes: a semiconductor element for converting DC current to AC current by switching operation; an electrical wiring board to which the semiconductor element is electrically connected, with the semiconductor element being disposed upon one of its principal surfaces; an insulating resin layer provided on the other principal surface of the electrical wiring board; a first insulation layer that is disposed opposite from the electrical wiring board, separated by the insulating resin layer, and that is joined to the insulating resin layer; a second insulation layer that is disposed opposite from the insulating resin layer, separated by the first insulation layer, and that ensures electrical insulation of the semiconductor element; and a metallic heat dissipation member that is disposed opposite from the first insulation layer, separated by the second insulation layer, and that radiates heat generated by the semiconductor element via the electrical wiring board, the insulating resin layer, the first insulation layer, and the second insulation layer.
摘要翻译：根据本发明的电源模块包括：用于通过切换操作将DC电流转换成AC电流的半导体元件; 半导体元件电连接的电气布线板，半导体元件设置在其主表面之一上; 绝缘树脂层，设置在所述电气布线板的另一个主表面上; 第一绝缘层，与所述电布线板相对设置，由所述绝缘树脂层隔开，并且与所述绝缘树脂层接合; 第二绝缘层，与绝缘树脂层相对设置，由第一绝缘层隔开，并且确保半导体元件的电绝缘; 以及金属散热构件，其与所述第一绝缘层相对设置，由所述第二绝缘层隔开，并且经由所述电布线板，所述绝缘树脂层，所述第一绝缘层和所述第二绝缘层辐射由所述半导体元件产生的热量第二绝缘层。

9. 发明授权

US07978471B2 Electric power conversion apparatus 有权
标题翻译：电力转换装置
公开(公告)号：US07978471B2
公开(公告)日：2011-07-12
申请号：US12388910
申请日：2009-02-19
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Keisuke Horiuchi , Toshiya Satoh , Hideki Miyazaki
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Keisuke Horiuchi , Toshiya Satoh , Hideki Miyazaki
IPC分类号： H05K7/20
CPC分类号： H05K7/20927 , B60K6/26 , B60K6/28 , B60K6/46 , B60K17/16 , B60L11/1803 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/429 , B60Y2200/92 , H01L23/3121 , H01L23/36 , H01L23/3675 , H01L23/473 , H01L23/492 , H01L23/49517 , H01L24/45 , H01L25/072 , H01L2224/40137 , H01L2924/00014 , H01L2924/0002 , H01L2924/1203 , H01L2924/13055 , H02M7/003 , H02M7/537 , H02P27/06 , H05K1/0262 , H05K7/2089 , Y10S903/906 , Y10S903/907 , Y10S903/909 , H01L2924/00 , H01L2224/45099
摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that comprises an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module comprises a first and a second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further comprises a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.
摘要翻译：电力转换装置包括：形成冷却水通道的通道壳体; 包括逆变器电路的上臂和下臂串联电路的双面冷却半导体模块; 电容器模块; 直流连接器; 和备用电流连接器。半导体模块包括第一和第二散热金属，其外表面是散热表面，上下臂串联电路紧密地设置在第一散热金属和第二散热金属之间，并且半导体模块还包括直流正极端子，直流负极端子和突出到外部的交流电流端子。通道壳体设置有从冷却水入口延伸到冷却水出口的冷却水通道以及通向冷却水通道的第一开口。

10. 发明授权

US07826196B2 Ceramic laminated device and method for manufacturing same 有权
标题翻译：陶瓷层压装置及其制造方法
公开(公告)号：US07826196B2
公开(公告)日：2010-11-02
申请号：US12161901
申请日：2007-03-06
申请人： Ryuichi Saito , Koichi Shigeno , Hiroshi Kagata
发明人： Ryuichi Saito , Koichi Shigeno , Hiroshi Kagata
IPC分类号： H01G4/06 , H01G4/005
CPC分类号： H05K1/0306 , H01G4/0085 , H01G4/129 , H01G4/30 , H03H7/0115 , H03H2001/0085 , H05K3/4611 , H05K3/4629 , Y10T29/435
摘要： The present invention relates to a ceramic laminated device including a dielectric ceramic and an Ag electrode. In a dielectric ceramic that can be sintered at low temperatures and has a high dielectric constant and Q value, reactivity between the ceramic and Ag during sintering is suppressed low and segregation of specific elements in the proximity of the electrode is controlled. Thus, a filter having a high Q value and low loss is produced stably. For this purpose, in a ceramic laminated body including at least a ceramic and a Si-containing glass, a ratio of A/B, i.e. a ratio of a Si element concentration (A) within a range at a distance of 5 μm or smaller from the Ag electrode to a Si element concentration (B) within a range at a distance larger than 5 μm from the Ag electrode, is set equal to or smaller than 2.
摘要翻译：本发明涉及包括电介质陶瓷和Ag电极的陶瓷层压装置。在可以在低温下烧结且具有高介电常数和Q值的电介质陶瓷中，抑制烧结期间陶瓷与Ag之间的反应性，并且控制电极附近的特定元素的偏析。因此，稳定地产生具有高Q值和低损耗的滤波器。为此，在至少包含陶瓷和含Si玻璃的陶瓷层叠体中，A / B的比率即Si元素浓度（A）在5μm以下的范围内的比例从Ag电极到距离Ag电极大于5μm的距离的范围内的Si元素浓度（B）被设定为2以下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式