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    • 9. 发明授权
    • Photomask correction method using composite charged particle beam, and device used in the correction method
    • 使用复合带电粒子束的光掩模校正方法,以及在校正方法中使用的装置
    • US07172839B2
    • 2007-02-06
    • US10721522
    • 2003-11-24
    • Yasuhiko SugiyamaJunichi TashiroAnto Yasaka
    • Yasuhiko SugiyamaJunichi TashiroAnto Yasaka
    • G03F9/00C03C15/00G01L21/30
    • G03F1/74
    • The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
    • 本发明的目的是提供一种解决由于镓离子照射引起的表面损伤的问题的方法,当使用当前建立的FIB技术进行掩模修复时存在问题,并且存在残留镓的问题,并提供一种装置 实现这个方法。 本发明的装置具有能够进行处理的电子束透镜镜筒以及设置在同一样品室内的FIB镜筒,这意味着本发明的掩模修复方法在校正处理中去除 冗余部分如掩模不透明缺陷,相移膜凸起缺陷或玻璃衬底切割残余缺陷包括通过使用聚焦离子束的蚀刻进行粗略校正的步骤和使用电子束进行精加工的步骤以去除表面损伤 由于镓照射和残留的镓。