专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090044926A1 Silicon casting apparatus 审中-公开
标题翻译：硅铸造设备
公开(公告)号：US20090044926A1
公开(公告)日：2009-02-19
申请号：US12222743
申请日：2008-08-15
申请人： Michio Kida , Kenichi Sasatani , Mitsuo Yoshihara , Tomohiro Onizuka
发明人： Michio Kida , Kenichi Sasatani , Mitsuo Yoshihara , Tomohiro Onizuka
IPC分类号： B22D11/041
CPC分类号： C30B11/001 , C30B11/002 , C30B11/003 , C30B29/06
摘要： In a silicon casting apparatus according to the present invention, silicon melted by electromagnetic induction heating is continuously solidified using an electrically-conductive bottomless cold crucible and an induction coil surrounding the cold crucible. The cold crucible is made of copper alloy containing beryllium (desirably containing beryllium of 0.1 to 5 mass %), whereby the generation of electric-discharge flaw can be effectively prevented in performing electromagnetic casting. The use of the silicon casting apparatus according to the present invention can greatly extend a crucible life to reduce facility costs. Additionally, a solar-cell silicon ingot can be produced with high quality.
摘要翻译：在根据本发明的硅铸造装置中，通过电磁感应加热熔化的硅使用导电底底冷坩埚和围绕冷坩埚的感应线圈连续固化。冷坩埚由含有铍（期望含有0.1〜5质量％的铍）的铜合金构成，能够有效地防止在进行电磁铸造时产生放电瑕疵。根据本发明的硅铸造装置的使用可以极大地延长坩埚寿命以减少设备成本。另外，可以以高品质生产太阳能电池硅锭。

2. 发明申请

US20080210156A1 Casting method for polycrystalline silicon 审中-公开
标题翻译：多晶硅铸造方法
公开(公告)号：US20080210156A1
公开(公告)日：2008-09-04
申请号：US12007651
申请日：2008-01-14
申请人： Kenichi Sasatani , Keita Nakagawa , Tomohiro Onizuka , Nobuyuki Kubo
发明人： Kenichi Sasatani , Keita Nakagawa , Tomohiro Onizuka , Nobuyuki Kubo
IPC分类号： C30B9/00
CPC分类号： C30B11/001 , C30B11/003 , C30B28/06 , C30B29/06
摘要： In a casting method for polycrystalline silicon in which a bottomless cooling crucible with a part of a certain length in an axial direction being circumferentially and plurally sectioned is provided inside an induction coil, producing a silicon melt within the cooling crucible by means of electromagnetically induced heating by the induction coil, and withdrawing the silicon melt in a downward direction while being solidified, an alternating current with a frequency of 25-35 kHz is applied on the induction coil. According to the casting method for polycrystalline silicon of the present invention, in addition to preventing rapid cooling of the ingot surface at the time of solidifying the molten silicon and producing the ingot, the stirring of the molten silicon inside the crucible is suppressed to thereby promote the growth of large diameter crystals, with the result that the conversion efficiency of the cast polycrystalline silicon used as solar cells is increased.
摘要翻译：在多晶硅的铸造方法中，在感应线圈的内部设置有在轴向上具有一定长度的无底部冷却坩埚，并且多个分段的多晶硅，通过电磁感应加热在冷却坩埚内产生硅熔体通过感应线圈，并且在固化的同时向下取出硅熔体，在感应线圈上施加频率为25-35kHz的交流电流。根据本发明的多晶硅的铸造方法，除了在固化熔融硅并且制造锭之后防止锭表面的快速冷却之外，抑制坩埚内的熔融硅的搅拌从而促进大直径晶体的生长，结果是用作太阳能电池的铸造多晶硅的转换效率增加。

3. 发明申请

US20130255315A1 ELECTROMAGNETIC CASTING METHOD AND APPARATUS FOR POLYCRYSTALLINE SILICON 有权
标题翻译：电磁铸造方法和聚硅氧烷的设备
公开(公告)号：US20130255315A1
公开(公告)日：2013-10-03
申请号：US13845507
申请日：2013-03-18
申请人： Koichi Maegawa , Tomohiro Onizuka , Mitsuo Yoshihara
发明人： Koichi Maegawa , Tomohiro Onizuka , Mitsuo Yoshihara
IPC分类号： H01L31/028
CPC分类号： H01L31/028 , B22D11/001 , B22D11/041 , B22D11/108 , B22D11/11 , B22D11/1213 , B22D11/20 , C30B13/20 , C30B15/08 , C30B28/04 , C30B28/06 , C30B29/06
摘要： Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.
摘要翻译：公开了一种多晶硅的电磁铸造方法，其特征在于，通过将硅原料装入无底冷模中，通过使用电磁感应加热来熔化硅原料，并拉下熔融硅使其固化，连续铸造多晶硅，其中在最终凝固过程开始之前的固 - 液界面的深度通过在稳态铸造的最后阶段中通过降低锭的下拉速率来降低。通过采用该方法，可以减少在锭的最终凝固部分中异物沉淀的区域，并且在生产作为太阳能电池的基板材料的多晶硅时可以防止产生裂纹。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式