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1. 发明申请

US20050084548A1 Antiobestic and/or antidiabetic agent containing cyanidin 3-glucoside as active ingredient 审中-公开
标题翻译：含有花青素3-葡萄糖苷作为有效成分的抗生素和/或抗糖尿病药
公开(公告)号：US20050084548A1
公开(公告)日：2005-04-21
申请号：US10504910
申请日：2002-07-04
申请人： Takanori Tsuda , Fumihiko Horio , Toshihiko Osawa , Koji Uchida , Hiromitsu Aoki , Takatoshi Koda
发明人： Takanori Tsuda , Fumihiko Horio , Toshihiko Osawa , Koji Uchida , Hiromitsu Aoki , Takatoshi Koda
IPC分类号： A23L1/30 , A23L2/02 , A61K31/7048 , A61K36/899 , A61P3/04 , A61P3/10 , C07H17/065 , A61K35/78 , A61K47/00
CPC分类号： A61K31/7048 , A23L2/02 , A23L33/105 , A23V2002/00 , A23V2200/15 , A23V2250/264 , A23V2250/032
摘要： The invention provides an antiobestic and/or antidiabetic agent containing cyanidin 3-glucoside as an active ingredient. Thereby the increase of adipose cells can be suppressed and the blood glucose level can be reduced safely and effectively.
摘要翻译：本发明提供含有花青素3-葡萄糖苷作为活性成分的抗胆碱和/或抗糖尿病药。从而能够抑制脂肪细胞的增加，能够安全有效地降低血糖值。

2. 发明申请

US20090082285A1 Adiponectin expression promoter 审中-公开
标题翻译：脂联素表达启动子
公开(公告)号：US20090082285A1
公开(公告)日：2009-03-26
申请号：US12153102
申请日：2008-05-14
申请人： Takanori Tsuda , Toshihiko Osawa , Yuki Ueno , Hiromitsu Aoki , Kouji Utida , Takatoshi Koda
发明人： Takanori Tsuda , Toshihiko Osawa , Yuki Ueno , Hiromitsu Aoki , Kouji Utida , Takatoshi Koda
IPC分类号： A61K31/7048 , A61K31/352
CPC分类号： C07D311/62 , A23L33/10 , A61K31/352 , A61K31/7048
摘要： To prevent or alleviate various pathologies caused by lifestyle-related diseases, etc., the present invention provides a substance having an effect of promoting the expression and elevating the expression level of adiponectin, and applications thereof. An adiponectin expression promoting agent containing, as an active ingredient, at least one cyanidin compound selected from the group consisting of cyanidin and cyanidin glycosides can be applied to pharmaceutical or food compositions for use in applications in which the pharmacological effects of adiponectin are utilized.
摘要翻译：为了防止或减轻与生活方式相关的疾病等引起的各种病症，本发明提供具有促进脂联素表达和提高脂联素表达水平的作用的物质及其应用。含有作为活性成分的至少一种选自花青素和花青素苷的花青素化合物的脂联素表达促进剂可以应用于药物或食品组合物，用于其中利用脂连蛋白的药理作用的应用中。

3. 发明申请

US20060234957A1 Adiponectin expression promoter 审中-公开
公开(公告)号：US20060234957A1
公开(公告)日：2006-10-19
申请号：US10546808
申请日：2004-03-02
申请人： Takanori Tsuda , Toshihiko Osawa , Yuki Ueno , Hiromitsu Aoki , Kouji Utida , Takatoshi Koda
发明人： Takanori Tsuda , Toshihiko Osawa , Yuki Ueno , Hiromitsu Aoki , Kouji Utida , Takatoshi Koda
IPC分类号： A61K31/7048 , A61K31/343 , A61K36/899 , A61K36/45 , A61K36/31 , A61K36/48 , A61K36/73 , A61K36/87
CPC分类号： C07D311/62 , A23L33/10 , A61K31/352 , A61K31/7048
摘要： To prevent or alleviate various pathologies caused by lifestyle-related diseases, etc., the present invention provides a substance having an effect of promoting the expression and elevating the expression level of adiponectin, and applications thereof. An adiponectin expression promoting agent containing, as an active ingredient, at least one cyanidin compound selected from the group consisting of cyanidin and cyanidin glycosides can be applied to pharmaceutical or food compositions for use in applications in which the pharmacological effects of adiponectin are utilized.

4. 发明授权

US06171977B2 Semiconductor device applied to composite insulative film manufacturing method thereof 失效
标题翻译：半导体装置应用于复合绝缘膜的制造方法
公开(公告)号：US06171977B2
公开(公告)日：2001-01-09
申请号：US08777098
申请日：1996-12-30
申请人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
发明人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
IPC分类号： H01L2131
CPC分类号： H01L29/66181 , H01L21/28167 , H01L21/3185
摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800° C. to 1200° C. and the partial pressures of H2O and O2 are set at 1×10−4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.
摘要翻译：清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。接着，在CVD氮化膜上形成氧化硅膜。结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。然后，在沟槽中形成用于复合绝缘膜的电极。

5. 发明授权

US5838056A Semiconductor device applied to composite insulative film and manufacturing method thereof 失效
标题翻译：具有氮化物膜的半导体器件
公开(公告)号：US5838056A
公开(公告)日：1998-11-17
申请号：US777100
申请日：1996-12-30
申请人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
发明人： Yoshio Kasai , Takashi Suzuki , Takanori Tsuda , Yuuichi Mikata , Hiroshi Akahori , Akihito Yamamoto
IPC分类号： H01L27/04 , H01L21/28 , H01L21/318 , H01L21/334 , H01L21/822 , H01L21/8242 , H01L27/108 , H01L23/58
CPC分类号： H01L29/66181 , H01L21/28167 , H01L21/3185
摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH.sub.3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800.degree. C. to 1200.degree. C. and the partial pressures of H.sub.2 O and O.sub.2 are set at 1.times.10.sup.-4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.
摘要翻译：清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。接着，在CVD氮化膜上形成氧化硅膜。结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。然后，在沟槽中形成用于复合绝缘膜的电极。

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