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    • 2. 发明申请
    • Liquid crystal display device
    • 液晶显示装置
    • US20080266476A1
    • 2008-10-30
    • US12213531
    • 2008-06-20
    • Takanori NakayamaRyuuta WatanabeJun OoidaYasuko GotohKaori Miyazaki
    • Takanori NakayamaRyuuta WatanabeJun OoidaYasuko GotohKaori Miyazaki
    • G02F1/133
    • H01L29/78696G02F1/136213G02F1/1368H01L29/78618H01L29/78669
    • A liquid crystal display device comprises a pair of substrates which are arranged to face each other in an opposed manner while sandwiching liquid crystal therebetween, pixel regions which are formed on a liquid-crystal-side surface of one substrate out of the pair of substrates, and thin film transistors which are formed on respective pixel regions, wherein each thin film transistor includes a gate electrode connected to a gate signal line, a semiconductor layer laminated to the gate electrode by way of an insulation film, a drain electrode formed on the semiconductor layer and connected to a drain signal line, and a source electrode connected to a pixel electrode, and the semiconductor layer is formed in a periodically irregular shape in a zone having a width substantially larger than a width of the source electrode on a side thereof from which at least the source electrode is pulled out.
    • 一种液晶显示装置包括一对基板,它们以相对的方式彼此相对地配置,同时夹着液晶,在一对基板的一个基板的液晶侧表面上形成的像素区域, 以及形成在各像素区域上的薄膜晶体管,其中每个薄膜晶体管包括连接到栅极信号线的栅极电极,通过绝缘膜层压到栅电极的半导体层,形成在半导体上的漏电极 并且连接到漏极信号线,以及连接到像素电极的源极,并且半导体层在具有基本上大于其源极电极的宽度的宽度的区域中形成为周期性不规则形状 至少该源极被拉出。
    • 4. 发明授权
    • Inspection method for patterning of photoresist
    • 光刻胶图形化检测方法
    • US08685631B2
    • 2014-04-01
    • US12817623
    • 2010-06-17
    • Yoshihiro DaitoRyuuta WatanabeYoshitaka Imabayashi
    • Yoshihiro DaitoRyuuta WatanabeYoshitaka Imabayashi
    • G03F7/22
    • G03F7/16
    • A nozzle is moved while supplying a photoresist liquid from a slit. A photoresist layer is formed on a film. A resist pattern which covers a portion of the film is formed from the photoresist layer by photolithography. Inspection of the resist pattern is performed. The photolithography includes an exposure which is performed so as to transfer a latent image to the photoresist layer, and a development of the photoresist layer which is performed so as to leave the latent image. The latent image contains a dummy latent image which extends in an unbroken manner parallel to the longitudinal direction of the slit. The resist pattern contains a dummy resist formed correspondingly to the dummy latent image. The inspection of the resist pattern includes the detection of the presence or non-presence of a cut in the dummy resist in the longitudinal direction.
    • 在从狭缝供给光致抗蚀剂液体的同时移动喷嘴。 在膜上形成光致抗蚀剂层。 通过光刻从光致抗蚀剂层形成覆盖膜的一部分的抗蚀剂图案。 进行抗蚀剂图案的检查。 光刻法包括进行曝光以将潜像转印到光致抗蚀剂层,以及显影以使离开潜像的方式被执行。 潜像包含以与缝隙的纵向方向平行的不间断的方式延伸的虚拟潜像。 抗蚀剂图案包含对应于虚拟潜像形成的虚拟抗蚀剂。 抗蚀剂图案的检查包括在纵向方向上检测伪抗蚀剂中的切口的存在或不存在。
    • 5. 发明申请
    • INSPECTION METHOD FOR PATTERNING OF PHOTORESIST
    • 用于绘制光刻胶的检查方法
    • US20100323304A1
    • 2010-12-23
    • US12817623
    • 2010-06-17
    • Yoshihiro DAITORyuuta WatanabeYoshitaka Imabayashi
    • Yoshihiro DAITORyuuta WatanabeYoshitaka Imabayashi
    • G03F7/20
    • G03F7/16
    • A nozzle is moved while supplying a photoresist liquid from a slit. A photoresist layer is formed on a film. A resist pattern which covers a portion of the film is formed from the photoresist layer by photolithography. Inspection of the resist pattern is performed. The photolithography includes an exposure which is performed so as to transfer a latent image to the photoresist layer, and a development of the photoresist layer which is performed so as to leave the latent image. The latent image contains a dummy latent image which extends in an unbroken manner parallel to the longitudinal direction of the slit. The resist pattern contains a dummy resist formed correspondingly to the dummy latent image. The inspection of the resist pattern includes the detection of the presence or non-presence of a cut in the dummy resist in the longitudinal direction.
    • 在从狭缝供给光致抗蚀剂液体的同时移动喷嘴。 在膜上形成光致抗蚀剂层。 通过光刻从光致抗蚀剂层形成覆盖膜的一部分的抗蚀剂图案。 进行抗蚀剂图案的检查。 光刻法包括进行曝光以将潜像转印到光致抗蚀剂层,以及显影以使离开潜像的方式被执行。 潜像包含以与缝隙的纵向方向平行的不间断的方式延伸的虚拟潜像。 抗蚀剂图案包含对应于虚拟潜像形成的虚拟抗蚀剂。 抗蚀剂图案的检查包括在纵向方向上检测伪抗蚀剂中的切口的存在或不存在。