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    • 3. 发明授权
    • Analog-to-digital conversion circuit having a pulse circulating portion
    • 具有脉冲循环部分的模数转换电路
    • US5396247A
    • 1995-03-07
    • US31262
    • 1993-03-15
    • Takamoto WatanabeYoshinori OhtsukaTadashi Hattori
    • Takamoto WatanabeYoshinori OhtsukaTadashi Hattori
    • H03M1/06H03K3/03H03M1/14H03M1/50H03M1/64H03M1/60
    • G04F10/005H03M1/14H03M1/0619H03M1/502H03M1/60
    • A pulse circulating circuit includes inverting circuits each for inverting an input signal and outputting an inversion of the input signal. A time of signal inversion by each of the inverting circuits varies in accordance with a power supply voltage applied thereto. One of the inverting circuits constitutes an inverting circuit for starting which is controllable in inversion operation. The pulse circulating circuit circulates a pulse signal therethrough after the inverting circuit for starting starts to operate. An input terminal subjected to an analog voltage signal is connected to power supply lines of the respective inverting circuits for applying the analog voltage signal to the inverting circuits as a power supply voltage fed thereto. A counter serves to count a number of times of complete circulation of the pulse signal through the pulse circulating circuit. A circulation position detecting device serves to detect a circulation position of the pulse signal in the pulse circulating circuit on the basis of output signals of the respective inverting circuits. A control device is operative for activating the inverting circuit for starting and thereby starting pulse circulating operation of the pulse circulating circuit, and for activating the circulation position detecting means at a moment which follows a moment of starting pulse circulating operation by a given time. An output device is operative for outputting digital data as an A/D conversion result. The A/D conversion result data has lower bits composed of output digital data of the circulation position detecting device, and higher bits composed of output digital data of the counter.
    • 脉冲循环电路包括各自用于反相输入信号并输出​​输入信号的反相的反相电路。 每个反相电路的信号反转时间根据施加到其上的电源电压而变化。 反相电路中的一个构成在反转操作中可控制的用于启动的反相电路。 脉冲循环电路在用于启动的反相电路开始运行之后循环脉冲信号。 经受模拟电压信号的输入端子连接到各个反相电路的电源线,用于将模拟电压信号作为馈送到其的电源电压施加到反相电路。 计数器用于通过脉冲循环回路计数脉冲信号的完全循环次数。 循环位置检测装置用于根据各个反相电路的输出信号检测脉冲信号在脉冲循环电路中的循环位置。 控制装置用于启动反相电路,用于启动脉冲循环电路的脉冲循环操作,从而启动循环位置检测装置,该脉冲循环位置检测装置在与给定时间一起启动脉冲循环操作的瞬间激活。 输出装置用于输出数字数据作为A / D转换结果。 A / D转换结果数据具有由循环位置检测装置的输出数字数据组成的较低位,以及由计数器的输出数字数据构成的较高位。
    • 6. 发明授权
    • Semiconductor accelerometer
    • 半导体加速度计
    • US5504356A
    • 1996-04-02
    • US152505
    • 1993-11-16
    • Yukihiro TakeuchiToshimasa YamamotoYoshinori OhtsukaShigeyuki AkitaTadashi HattoriKazuhiko KanouHirotane Ikeda
    • Yukihiro TakeuchiToshimasa YamamotoYoshinori OhtsukaShigeyuki AkitaTadashi HattoriKazuhiko KanouHirotane Ikeda
    • G01P15/08G01P15/12H01L29/78H01L29/84
    • G01P15/124G01P15/0802
    • This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.
    • 本发明的目的在于提供一种新型的半导体加速度计,其包括较少数量的基板及其制造方法。 在P型硅基板的主平面上形成绝缘膜,在绝缘膜上形成有束状的可动电极。 然后通过将杂质扩散到P型硅衬底中,在可动电极的两侧与可动电极自对准地形成固定电极,蚀刻除去可动电极下面的绝缘膜。 因此,制造了包括P型硅衬底1,具有光束结构的可动电极4并且在它们之间具有预定间隙并且设置在P型硅衬底1上方的固定电极8,9的半导体加速度计, 该杂质扩散层形成在与可动电极4自对准的P型硅衬底1上的可动电极4的两侧。该传感器可以从电流的变化(增加/减少) 固定电极8和9由于加速而由可动电极4的位移而产生。
    • 7. 发明授权
    • Semiconductor sensor with suspended microstructure and method for
fabricating same
    • 具有悬浮微结构的半导体传感器及其制造方法
    • US5622633A
    • 1997-04-22
    • US516414
    • 1995-08-17
    • Yoshinori OhtsukaYukihiro TakeuchiTadashi Hattori
    • Yoshinori OhtsukaYukihiro TakeuchiTadashi Hattori
    • G01P15/08G01P15/12H01L21/00B44C1/22
    • G01P15/0802G01P15/124G01P2015/0814
    • An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.
    • 公开了一种能够避免特性恶化的MISFET型半导体传感器及其制造方法。 氧化硅膜和氮化硅膜形成在p型硅衬底的上表面上,并且可移动部分以其间插入预定间隔设置在氮化硅膜的上方。 可动栅电极部分存在于可动部分的一部分上并被加速度位移。 在p型硅衬底上形成由杂质扩散层构成的固定电极(源极/漏极部分),并且由于加速而与可动栅电极部分的相对位置的变化导致流动电流变化。 可移动范围限制使用的投影设置在可移动部分以外的可移动栅电极部分的下表面上,并且形成比p型硅基板和可动栅电极部分之间的间隙窄的间隙。