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1. 发明授权

US08366259B2 Film formation method, film formation device, piezoelectric film, piezoelectric device, liquid discharge device and piezoelectric ultrasonic transducer 有权
标题翻译：成膜方法，成膜装置，压电膜，压电装置，液体排出装置和压电超声换能器
公开(公告)号：US08366259B2
公开(公告)日：2013-02-05
申请号：US13443042
申请日：2012-04-10
申请人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
发明人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
IPC分类号： B41J2/17
CPC分类号： B41J2/155 , B41J2/14233 , C23C14/0036 , C23C14/088 , C23C14/3407 , C23C14/3471 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01J37/3444 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/316 , Y10T29/42 , Y10T428/31504
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要翻译：当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

2. 发明授权

US08075105B2 Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film 有权
标题翻译：钙钛矿型氧化膜，压电薄膜元件和使用钙钛矿型氧化物膜的液体喷射装置以及钙钛矿型氧化膜的制造方法及评价方法
公开(公告)号：US08075105B2
公开(公告)日：2011-12-13
申请号：US12560131
申请日：2009-09-15
申请人： Yoshikazu Hishinuma , Takamichi Fujii , Takayuki Naono , Yuuichi Okamoto , Ryosuke Ozawa
发明人： Yoshikazu Hishinuma , Takamichi Fujii , Takayuki Naono , Yuuichi Okamoto , Ryosuke Ozawa
IPC分类号： B41J2/045 , C04B35/495 , C04B35/00 , H01L41/18 , H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , C23C14/025 , C23C14/083 , C23C14/5806 , G01N21/65 , H01L41/1876 , H01L41/29 , H01L41/316
摘要： Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
摘要翻译：本发明提供一种具有钙钛矿型晶体结构并含有铅作为主要成分的钙钛矿型氧化物膜，其在表面上的多个点进行拉曼显微光谱检测，以便在施加电流时测量拉曼光谱 100kV / cm的电场，施加无电场时，具有2.2cm -1以下的峰值偏移量的绝对值的平均值，峰值偏移量在500〜650nm范围内的拉曼光谱之间发现在施加100kV / cm的电场时测量的cm -1，并且在施加无电场时测量的在500至650cm -1范围内的拉曼光谱。还提供了这种膜的制造方法和评价方法以及使用这种膜的装置。

3. 发明申请

US20110121096A1 PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS 有权
标题翻译：压电器件，压电器件制造方法和液体放电设备
公开(公告)号：US20110121096A1
公开(公告)日：2011-05-26
申请号：US13000408
申请日：2009-07-27
申请人： Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
发明人： Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
IPC分类号： B05B1/08 , H01L41/22 , H01L41/18 , H01L41/04
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译：一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。

4. 发明申请

US20100206718A1 PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK 有权
标题翻译：物理蒸汽沉积与阻抗匹配网络
公开(公告)号：US20100206718A1
公开(公告)日：2010-08-19
申请号：US12389253
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

5. 发明申请

US20100039482A1 MULTILAYER BODY, PIEZOELECTRIC ELEMENT, AND LIQUID EJECTING DEVICE 有权
标题翻译：多层体，压电元件和液体喷射装置
公开(公告)号：US20100039482A1
公开(公告)日：2010-02-18
申请号：US12538977
申请日：2009-08-11
申请人： Takamichi FUJII , Takami Arakawa , Takayuki Naono , Yoshikazu Hishinuma
发明人： Takamichi FUJII , Takami Arakawa , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： H01L41/047 , H01L41/22 , B41J2/045
CPC分类号： H01L41/0815 , B41J2/1612 , B41J2/1642 , B41J2/1646 , H01L41/0477 , Y10T29/42
摘要： A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要翻译：提供一种包括具有低电阻，优异的耐热性和低表面不规则性的低电阻金属层的多层体。多层体包括基板和形成在基板上的具有单层结构或两层以上的亚层的多层结构的低电阻金属层。低电阻金属层包括由金和另一种金属构成的含金层或子层。

6. 发明授权

US08540851B2 Physical vapor deposition with impedance matching network 有权
标题翻译：物理气相沉积与阻抗匹配网络
公开(公告)号：US08540851B2
公开(公告)日：2013-09-24
申请号：US12389253
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

7. 发明授权

US08172372B2 Film formation method, film formation device, piezoelectric film, piezoelectric device, liquid discharge device and piezoelectric ultrasonic transducer 有权
标题翻译：成膜方法，成膜装置，压电膜，压电装置，液体排出装置和压电超声换能器
公开(公告)号：US08172372B2
公开(公告)日：2012-05-08
申请号：US12618324
申请日：2009-11-13
申请人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
发明人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
IPC分类号： B41J2/045 , C23C14/34
CPC分类号： B41J2/155 , B41J2/14233 , C23C14/0036 , C23C14/088 , C23C14/3407 , C23C14/3471 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01J37/3444 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/316 , Y10T29/42 , Y10T428/31504
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要翻译：当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

8. 发明授权

US08047636B2 Film depositing apparatus, a film depositing method, a piezoelectric film, and a liquid ejecting apparatus 有权
标题翻译：膜沉积装置，膜沉积法，压电膜和液体喷射装置
公开(公告)号：US08047636B2
公开(公告)日：2011-11-01
申请号：US12461463
申请日：2009-08-12
申请人： Takamichi Fujii , Takayuki Naono
发明人： Takamichi Fujii , Takayuki Naono
IPC分类号： B41J2/045 , C23C14/00
CPC分类号： C23C14/34 , B41J2/1612 , B41J2/1642 , B41J2/1646 , C23C14/088 , H01J37/34 , H01J37/3438 , H01L41/0973 , H01L41/316 , Y10T428/31
摘要： A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate.
摘要翻译：一种成膜设备包括：处理室; 设置在处理室中的用于保持目标的目标支架; 衬底保持器，用于支撑沉积衬底，使得沉积衬底面对处理室中的靶保持器; 用于在所述目标保持器和所述基板保持器之间提供电力以在所述处理室中产生等离子体的电源; 以及阳极，其设置在所述靶保持器和所述基板保持器之间，用于捕获所述处理室内产生的等离子体中的离子和/或电子，其中所述阳极包括：圆柱形构件，设置成围绕所述处理室的一侧的外周面对目标支架的基板支架; 以及至少一个连接到所述圆柱形构件的内壁的环形板构件，所述板构件具有大于所述沉积衬底的表面的中心开口。

9. 发明申请

US20100208005A1 FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE 有权
标题翻译：膜形成方法，膜形成装置，压电膜，压电装置和液体放电装置
公开(公告)号：US20100208005A1
公开(公告)日：2010-08-19
申请号：US12707520
申请日：2010-02-17
申请人： Takamichi FUJII , Takayuki Naono
发明人： Takamichi FUJII , Takayuki Naono
IPC分类号： B41J2/045 , C23C14/34 , C23C14/38 , H01L41/047
CPC分类号： C23C14/34 , B41J2/161 , B41J2/1642 , B41J2/1646 , B41J2202/21 , C23C14/086 , C23C14/088 , C23C14/548
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face to each other, the film is formed with surrounding the substrate with a wall surface having the constituent elements of the target adhering thereto, and applying a physical treatment to the wall surface to cause the components adhering to the wall surface to be released into the film formation atmosphere.
摘要翻译：当通过使用等离子体的气相沉积工艺在基板上形成含有靶的构成元素的膜时，将基板和目标物彼此面对，形成具有围绕基板的壁，其具有构成元件的附着物，对壁面进行物理处理，使附着在壁面上的成分释放到成膜气氛中。

10. 发明申请

US20100206714A1 PHYSICAL VAPOR DEPOSITION WITH PHASE SHIFT 有权
标题翻译：物理蒸气沉积与相移
公开(公告)号：US20100206714A1
公开(公告)日：2010-08-19
申请号：US12389241
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

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