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1. 发明授权

US07863061B2 Surface emitting laser manufacturing method, surface emitting laser array manufacturing method, surface emitting laser, surface emitting laser array, and optical apparatus including surface emitting laser array 有权
公开(公告)号：US07863061B2
公开(公告)日：2011-01-04
申请号：US12509635
申请日：2009-07-27
申请人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
发明人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18347 , H01S2301/166 , H01S2301/176
摘要： Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.

2. 发明申请

US20070218398A1 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US20070218398A1
公开(公告)日：2007-09-20
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/18
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl. group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。组。

3. 发明申请

US20050064301A1 Mask manufacturing method 审中-公开
标题翻译：面膜制作方法
公开(公告)号：US20050064301A1
公开(公告)日：2005-03-24
申请号：US10931985
申请日：2004-09-02
申请人： Takako Yamaguchi , Yasuhisa Inao
发明人： Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03C5/00 , G03F1/24 , G03F1/68 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： B82Y10/00 , G03F1/50 , G03F7/7035
摘要： A mask manufacturing method includes a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening; and a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in the first step.
摘要翻译：掩模制造方法包括：第一步骤，通过用曝光光照射工件基板，在工件基板上形成基于具有不大于曝光光的波长的尺寸的微细开口的图案的精细图案通过设置有微细开口的第一掩模和使用从微细开口泄漏的近场光; 以及通过基于在第一步骤中形成的精细图案处理工件基板来形成第二掩模的第二步骤。

4. 发明授权

US06628392B2 Light modulation apparatus and optical switch, movement detecting device and distance measuring device, alignment device and semiconductor aligner, and processes thereof 失效
标题翻译：光调制装置和光开关，移动检测装置和距离测量装置，对准装置和半导体对准器及其处理
公开(公告)号：US06628392B2
公开(公告)日：2003-09-30
申请号：US09931720
申请日：2001-08-20
申请人： Ryo Kuroda , Yasuhiro Shimada , Junichi Seki , Takako Yamaguchi , Yasuhisa Inao
发明人： Ryo Kuroda , Yasuhiro Shimada , Junichi Seki , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G01B1100
CPC分类号： G03F9/703 , G03F9/7038 , G03F9/7049 , G03F9/7088
摘要： Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.
摘要翻译：这里公开了一种光调制装置，其包括第一和第二两个周期性结构，每个周期结构的周期小于从光源发射的光的波长;以及移动装置，用于相对移动两个周期性结构，其中第一周期性结构的表面被带到第二周期性结构的表面附近到不长于波长的空间以将它们布置成彼此相对的状态，入射到第一周期性结构的光被第一周期性结构转换成近场光转换的近场光透过第二周期结构传播，并通过散射第二周期结构的背面上的近场光而转换为传播光，并且传播光的强度通过相对移动两个通过移动装置的周期性结构。

5. 发明授权

US07733491B2 Sensor device and testing method utilizing localized plasmon resonance 失效
标题翻译：使用局部等离子体共振的传感器装置和测试方法
公开(公告)号：US07733491B2
公开(公告)日：2010-06-08
申请号：US12131433
申请日：2008-06-02
申请人： Ryo Kuroda , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao , Tomohiro Yamada
发明人： Ryo Kuroda , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao , Tomohiro Yamada
IPC分类号： G12Q1/68 , G01N1/02 , G01N21/55
CPC分类号： G01N21/648 , G01N21/554 , Y10T436/11
摘要： A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.
摘要翻译：传感器装置由具有多个开口的金属膜形成，位于每个开口内的传感器材料，发射具有第一波长的光的光源和检测从光源发出的光并发射的光检测器从开口穿过或反射。多个开口在金属膜中沿第一方向周期性地布置，并且多个开口中的每一个的尺寸和第一方向上的间隔都等于或小于光的波长。

6. 发明申请

US20100029027A1 SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY 有权
标题翻译：表面发射激光制造方法，表面发射激光阵列制造方法，表面发射激光，表面发射激光阵列和包括表面发射激光阵列的光学装置
公开(公告)号：US20100029027A1
公开(公告)日：2010-02-04
申请号：US12509635
申请日：2009-07-27
申请人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
发明人： Mitsuhiro Ikuta , Yasuhisa Inao , Takako Yamaguchi
IPC分类号： H01L21/00 , H01S5/00
CPC分类号： H01S5/18391 , H01S5/18311 , H01S5/18347 , H01S2301/166 , H01S2301/176
摘要： Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure.
摘要翻译：本发明提供了一种表面发射激光制造方法等，其减少了对表面起伏结构发生的工艺损伤，能够稳定地提供单一横模特性。提供了一种包括用于控制上反射镜的发光部分中的反射率的表面浮雕结构的方法，所述表面浮雕结构包括阶梯结构，包括：形成包括用于形成台面结构的图案的抗蚀剂图案和用于形成台阶结构的图案在上反射镜上或上方形成台阶结构，并执行用于蚀刻上镜的表面层的第一相蚀刻以确定阶梯结构的水平位置; 在执行第一相蚀刻之后形成电流限制结构; 并且在形成电流限制结构之后，执行第二相蚀刻以进一步蚀刻已经执行第一相蚀刻的区域，以确定阶梯结构的深度位置。

7. 发明申请

US20080107998A1 NEAR-FIELD EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD USING THE SAME 审中-公开
标题翻译：近场曝光方法及使用其的装置制造方法
公开(公告)号：US20080107998A1
公开(公告)日：2008-05-08
申请号：US11740604
申请日：2007-04-26
申请人： Yasuhisa Inao , Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Takako Yamaguchi , Toshiki Ito , Natsuhiko Mizutani
IPC分类号： G03F9/00
CPC分类号： G03F7/2014 , G03F1/50 , G03F7/091 , G03F7/094 , G03F7/7035
摘要： A near-field exposure method in which a light blocking film with an opening having an opening width not greater than a wavelength size of exposure light is contacted to an object to be exposed and in which light from an exposure light source is projected on the light blocking film so that a pattern based on the opening of the light blocking film is formed on the object to be exposed, by use of near-field light produced at the opening, wherein the object to be exposed is prepared by a process that includes (i) a step of providing, upon a substrate having surface irregularity, a shape buffering layer so as to fill the surface irregularity thereof to thereby flatten the surface of the substrate, (ii) a step of providing, upon the shape buffering layer, a light reflecting layer for reflecting the exposure light, and (iii) a step of providing a photosensitive resist layer upon the light reflecting layer, and wherein the exposure is carried out to the object so prepared.
摘要翻译：一种近场曝光方法，其中具有不大于曝光光的波长尺寸的开口宽度的开口的遮光膜与待曝光的物体接触，并且来自曝光光源的光被投射到光使得通过使用在开口处产生的近场光，在待曝光的物体上形成基于遮光膜的开口的图案，其中待曝光的物体通过包括（ i）在具有表面不规则的基板上设置形状缓冲层以填充其表面不规则性从而使基板的表面变平的步骤，（ii）在形状缓冲层上设置一个用于反射曝光光的光反射层，以及（iii）在光反射层上提供光敏抗蚀剂层的步骤，并且其中对如此制备的物体进行曝光。

8. 发明授权

US07303859B2 Photoresist, photolithography method using the same, and method for producing photoresist 失效
标题翻译：光刻胶，使用其的光刻法和光致抗蚀剂的制造方法
公开(公告)号：US07303859B2
公开(公告)日：2007-12-04
申请号：US11439983
申请日：2006-05-25
申请人： Takako Yamaguchi , Yasuhisa Inao
发明人： Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F7/30 , G03F7/023
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/60 , G03F7/0236 , G03F7/2014 , G03F7/70325
摘要： There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist α (μm−1) for the exposure light is such that 0.5≦α≦7.
摘要翻译：提供了用于近场暴露的正性光致抗蚀剂，即使对于用于图像形成的光致抗蚀剂层的薄层厚度也具有优异的光利用效率，并且允许减小的图案边缘粗糙度，以及包括通过近场曝光的步骤曝光的步骤的光刻方法，场曝光用于其形成的图像形成用光致抗蚀剂层。在含有碱溶性酚醛清漆树脂和醌二叠氮化合物的正性光致抗蚀剂中，曝光时的光致抗蚀剂的膜厚不大于100nm，光致抗蚀剂α（mum < ）使得曝光光使得0.5 <=α<= 7。

9. 发明授权

US07704672B2 Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device 失效
标题翻译：光敏性硅烷偶联剂，表面改性方法，成型方法及其制造方法
公开(公告)号：US07704672B2
公开(公告)日：2010-04-27
申请号：US11705787
申请日：2007-02-14
申请人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
发明人： Toshiki Ito , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl group.
摘要翻译：提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。

10. 发明申请

US20080246970A1 SENSOR DEVICE AND TESTING METHOD UTILIZING LOCALIZED PLASMON RESONANCE 失效
标题翻译：传感器设备和测试方法利用本地化的PLASMON共振
公开(公告)号：US20080246970A1
公开(公告)日：2008-10-09
申请号：US12131433
申请日：2008-06-02
申请人： Ryo Kuroda , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao , Tomohiro Yamada
发明人： Ryo Kuroda , Natsuhiko Mizutani , Takako Yamaguchi , Yasuhisa Inao , Tomohiro Yamada
IPC分类号： G01N21/55
CPC分类号： G01N21/648 , G01N21/554 , Y10T436/11
摘要： A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.
摘要翻译：传感器装置由具有多个开口的金属膜形成，位于每个开口内的传感器材料，发射具有第一波长的光的光源和检测从光源发出的光并发射的光检测器从开口穿过或反射。多个开口在金属膜中沿第一方向周期性地布置，并且多个开口中的每一个的尺寸和第一方向上的间隔都等于或小于光的波长。

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