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    • 9. 发明授权
    • Semiconductor device, its manufacturing method and electronic apparatus thereof
    • 半导体装置及其制造方法及其电子装置
    • US07884407B2
    • 2011-02-08
    • US12362346
    • 2009-01-29
    • Takashi NaganoYasushi Morita
    • Takashi NaganoYasushi Morita
    • H01L21/8238
    • H01L27/14609H01L21/82385H01L21/823864H01L27/092H01L27/10873H01L27/10894H01L27/14689
    • The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.
    • 本发明提出一种半导体器件及其制造方法及其电子设备,其中可以制造CMOS型固态成像器件,形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层,DRAM单元的面积等形成单个半导体芯片。 根据本发明,半导体器件被构成为使用具有多个层的绝缘膜,通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁 在形成金属硅化物层的地方,并且在未形成金属硅化物层的区域中,由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上,或者多层绝缘膜保持不变 。