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    • 3. 发明授权
    • Method for fabrication BiCMOS integrated circuit
    • BiCMOS集成电路制造方法
    • US5840603A
    • 1998-11-24
    • US915405
    • 1997-08-20
    • Kayoko Sakamoto
    • Kayoko Sakamoto
    • H01L27/06H01L21/8249H01L21/8238
    • H01L21/8249
    • A first photoresist layer has opening portions in a region where an n-channel MOS transistor should be formed and in a region where a collector leading region should be formed. Then, phosphorous is implanted with taking the first photoresist layer as a mask. The first photoresist layer is then removed and a second photoresist layer is formed. The second photoresist layer has opening portions in a region where an emitter region should be formed and in the region where the collector leading region should be formed. Phosphorous is implanted with taking the second photoresist layer as a mask to form an n-type selective diffusion region in a region below the region where the emitter region should be formed and in the region where the collector leading region should be formed. Then, the second photoresist layer is removed. A polycrystalline silicon layer is formed over the entire surface and arsenic is implanted therein to make it n-type. Thereafter, heat treatment is performed to form an emitter region in the region where the emitter region should be formed and an n-type diffusion layer in the region where the collector leading region should be formed.
    • 第一光致抗蚀剂层在应该形成n沟道MOS晶体管的区域中和在应该形成集电极引导区域的区域中具有开口部分。 然后,以第一光致抗蚀剂层为掩模,注入磷。 然后去除第一光致抗蚀剂层,并形成第二光致抗蚀剂层。 第二光致抗蚀剂层在应当形成发射极区域的区域和在应该形成集电极引导区域的区域中具有开口部分。 以第二光致抗蚀剂层为掩模注入磷,在形成发射极区域的区域下方的区域和形成集电极引导区域的区域内形成n型选择扩散区域。 然后,去除第二光致抗蚀剂层。 在整个表面上形成多晶硅层,并且将砷注入其中以使其成为n型。 此后,进行热处理,以在应该形成发射区的区域中形成发射极区域,并且在应该形成集电极引导区域的区域中形成n型扩散层。