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1. 发明授权

US5696042A Ceramic porous body and method for preparing the same 失效
标题翻译：陶瓷多孔体及其制备方法
公开(公告)号：US5696042A
公开(公告)日：1997-12-09
申请号：US531668
申请日：1995-09-21
申请人： Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
发明人： Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
IPC分类号： F01N3/02 , B01D39/20 , C04B35/626 , C04B38/00 , C04B35/584
CPC分类号： C04B38/00 , C04B38/0051 , C04B2111/00793 , C04B2111/0081
摘要： A ceramic porous body for a filter or a catalyst carrier, having a structure in which voids each having the same volume as that of a sphere of 10 .mu.m to 500 .mu.m in diameter are formed and the voids are communicated with each other through smaller fine pores, the ceramic porous body having a volume fraction of the voids and the fine pores of from 15% to 60% and being formed of components 70% or higher by volume of which is silicon nitride. The ceramic porous body is prepared by mixing coarse silicon nitride powder with fine silicon nitride powder(s) at a mixing ratio by volume of the fine silicon nitride powder to the combined volume of the fine and coarse silicon nitride powders in the range of 1/99 to 1/2; adding one or more compounds of the group IIa elements, the group IIIa elements, transition metals, Al and Si in a range of 1% to 30% by volume as their oxides to the silicon nitride powder mixture; molding the resultant powder mixture; and sintering the molded body in a non-oxidizing atmosphere of at least 0.9 atm at a temperature ranging from 1100.degree. C. to 2000.degree. C.
摘要翻译：一种用于过滤器或催化剂载体的陶瓷多孔体，其结构是形成具有与直径为10μm至500μm的球体相同体积的空隙，并且空隙通过较小的相互连通细孔，陶瓷多孔体的空隙体积分数和细孔为15％〜60％，由体积为70％以上的成分形成为氮化硅。陶瓷多孔体是通过将氮化硅粉末与氮化硅微粉末的混合比例与氮化硅细粉末的体积比与在+ E范围内的微细和粗大的氮化硅粉末的组合体积进行混合来制备的，1/99 + EE至+ E，fra 1/2 + EE; 将一种或多种IIa族元素，IIIa族元素，过渡金属，Al和Si的化合物作为其氧化物以1体积％至30体积％的范围添加到氮化硅粉末混合物中; 模制所得粉末混合物; 并在1100〜2000℃的温度下在至少0.9atm的非氧化性气氛中烧结成型体。

2. 发明授权

US5846460A Method of preparing silicon nitride porous body 失效
标题翻译：氮化硅多孔体的制备方法
公开(公告)号：US5846460A
公开(公告)日：1998-12-08
申请号：US686818
申请日：1996-07-26
申请人： Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
发明人： Takahiro Matsuura , Chihiro Kawai , Akira Yamakawa
IPC分类号： B01D39/20 , B01D71/02 , B01J27/24 , B01J32/00 , B01J35/04 , C04B35/584 , C04B38/00 , C04B38/04
CPC分类号： B01D67/0041 , B01D39/2079 , B01D71/02 , B01J27/24 , C04B38/00 , B01D2323/10 , C04B2111/00793 , C04B2111/0081
摘要： A silicon nitride ceramic porous body having excellent acid and alkali resistance, mechanical strength, and durability can be employed as a filter or a catalytic carrier. The silicon nitride porous body contains a plurality of silicon nitride crystal grains with pores formed in grain boundary parts thereof, or includes a body part and a pore part wherein the body part is formed by a plurality of silicon nitride crystal grains and the pore part forms a three-dimensional network structure. The body part is formed by at least 90 vol. % of silicon nitride crystal grains, which are directly bonded to each other. In order to prepare the finished ceramic porous body, a porous body compact which is mainly composed of silicon nitride, is brought into contact with an acid and/or an alkali so that a component other than silicon nitride is partially or entirely dissolved and removed from the compact. The compact is prepared from a mixed powder of silicon nitride powder and at least one of a rare earth compound powder, a transition metal compound powder, and a bismuth compound, which is heat treated in the temperature range from 1600.degree. C. to 2100.degree. C.
摘要翻译：可以使用具有优异的耐酸碱性，机械强度和耐久性的氮化硅陶瓷多孔体作为过滤器或催化载体。氮化硅多孔体含有在其晶界部分形成有孔的多个氮化硅晶粒，或包括主体部分和孔部分，其中主体部分由多个氮化硅晶粒形成并且孔部分形成一个三维网络结构。身体部位形成至少90体积。％的氮化硅晶粒直接接合。为了制备成品陶瓷多孔体，将主要由氮化硅组成的多孔体压块与酸和/或碱接触，使得除了氮化硅以外的成分部分或全部溶解并从其中去除紧凑型。该压块由氮化硅粉末和稀土化合物粉末，过渡金属化合物粉末和铋化合物中的至少一种的混合粉末制备，其在1600℃至2100℃的温度范围内进行热处理 C。

3. 发明授权

US5858523A Porous ceramic film and process for producing the same 失效
标题翻译：多孔陶瓷膜及其制造方法
公开(公告)号：US5858523A
公开(公告)日：1999-01-12
申请号：US538738
申请日：1995-10-03
申请人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
发明人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
IPC分类号： B01D71/02 , B01D39/20 , B01J35/04 , C04B38/00 , C04B41/45 , C04B41/52 , C04B41/81 , C04B41/85 , C04B41/89 , B32B29/02
CPC分类号： C04B41/009 , B01D39/2075 , B01D39/2086 , C04B41/4582 , C04B41/52 , C04B41/81 , C04B41/89 , C04B2111/00793 , Y10T428/249969 , Y10T428/24997 , Y10T428/24999 , Y10T428/252 , Y10T428/259 , Y10T442/69 , Y10T442/691
摘要： A porous ceramic film which is formed onto and bonded to an oxide layer provided on the surface of a porous base, the film composed of finely deposited particles comprising at least one compound including (a) at least one selected from the group consisting of Si, B and Al or the group consisting of the metals of the Groups IVa, Va and VIa and (b) at least one selected from the group consisting of C and N in which the particles are intertwined with each other and bonded to each other through the component of the oxide layer to form a three-dimensionally intertwined structure. This porous ceramic film is produced by forming the oxide layer on the base surface and then heating it to a temperature of at least of the liquid-phase formation temperature of the oxide layer in a gaseous atmosphere containing the above elements (a) and (b). The porous ceramic film has a high porosity, a good pressure resistance and a regulated pore size and is appropriate for a filter, a catalyst support, bioreactor or a structural material.
摘要翻译：一种多孔陶瓷膜，其形成在多孔基材的表面上并与其结合的氧化物层上，所述多孔陶瓷膜由精细沉积的颗粒构成，所述微粒包含至少一种化合物，所述至少一种化合物包括（a）选自Si， B和Al或由IVa，Va和VIa族金属组成的组，和（b）选自C和N中的至少一种，其中颗粒彼此缠结并通过氧化物层的组分以形成三维缠结的结构。该多孔陶瓷膜通过在基体表面上形成氧化物层，然后在含有上述元素（a）和（b）的气体气氛中将其加热至至少氧化物层的液相形成温度的温度）。多孔陶瓷膜具有高孔隙率，良好的耐压性和调节的孔径，适用于过滤器，催化剂载体，生物反应器或结构材料。

4. 发明授权

US5780374A High-strength porous silicon nitride body and process for producing the same 失效
标题翻译：高强度多孔氮化硅体及其制造方法
公开(公告)号：US5780374A
公开(公告)日：1998-07-14
申请号：US774612
申请日：1996-12-30
申请人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
发明人： Chihiro Kawai , Takahiro Matsuura , Akira Yamakawa
IPC分类号： C04B35/584 , C04B38/00 , C04B38/06
CPC分类号： C04B38/00 , C04B38/06
摘要： A high-porosity and high-strength porous silicon nitride body comprises columnar silicon nitride grains and an oxide bond phase containing 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and has an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65 and an average pore size of at most 3.5 .mu.m. The porous silicon nitride body is produced by compacting comprising a silicon nitride powder, 2 to 15 wt. %, in terms of oxide based on silicon nitride, of at least one rare earth element, and an organic binder while controlling the oxygen content and carbon content of said compact; and sintering said compact in an atmosphere comprising nitrogen at 1,650.degree. to 2,200.degree. C. to obtain a porous body having a three-dimensionally entangled structure made up of columnar silicon nitride grains and an oxide bond phase, and having an SiO.sub.2 /(SiO.sub.2 +rare earth element oxide) weight ratio of 0.012 to 0.65.
摘要翻译：高孔隙率和高强度多孔氮化硅体包括柱状氮化硅颗粒和含有2至15wt。至少一种稀土元素为基于氮化硅的氧化物的％，SiO 2 /（SiO 2 +稀土元素氧化物）的重量比为0.012〜0.65，平均孔径为3.5μm以下。多孔氮化硅体通过压制而制成，其包含氮化硅粉末，2〜15重量％％，基于氮化硅的氧化物，至少一种稀土元素和有机粘合剂，同时控制所述成型体的氧含量和碳含量; 并在包含氮气的气氛中在1650℃-2200℃下烧结所述成型体，得到由柱状氮化硅晶粒和氧化物结合相构成的三维缠结结构的多孔体，并具有SiO 2 /（SiO 2 + 稀土元素氧化物）重量比为0.012〜0.65。

5. 发明授权

US5776600A Slide member and method of manufacturing the same 失效
标题翻译：滑动构件及其制造方法
公开(公告)号：US5776600A
公开(公告)日：1998-07-07
申请号：US631666
申请日：1996-04-09
申请人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
发明人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
IPC分类号： C04B35/01 , C04B35/584 , C04B35/593 , C04B41/00 , C04B41/80 , F16C33/04 , F16C33/16 , C04B35/587
CPC分类号： C04B41/009 , C04B35/01 , C04B35/584 , C04B35/593 , C04B35/5935 , C04B41/0072 , C04B41/80 , F16C33/043 , F16C33/16 , C04B2111/00353 , Y10T428/252 , Y10T428/2991 , Y10T428/30
摘要： A slide member has a sliding surface made of ceramic and a has surface roughness of not more than 1.0 .mu.m in center line average roughness Ra. The ceramics includes a silicon nitride sintered body which contains crystal grains having a linear density of at least 35 per 30 .mu.m in length with a boundary phase volume ratio of not more than 15 volume %, and which contains pores of not more than 20 .mu.m in maximum diameter in a content of not more than 3%. In a method of manufacturing the slide member, it is possible to ensure smoothness of the sliding surface by grinding the sliding surface and thereafter heating the ceramic in an either an inert gas or atmospheric air. A slide member that can be used under severe sliding conditions of high-speed sliding or the like and that has excellent wear resistance is obtained. Even if the slide member is used for to a sliding part of a compressor or the like which employs a fluorocarbon containing no chlorine as a cooling medium, it is possible to prevent the occurrence of seizure and abnormal wear on the sliding surface.
摘要翻译：滑动构件具有由陶瓷制成的滑动面，并且在中心线平均粗糙度Ra中具有不大于1.0μm的表面粗糙度。陶瓷包括氮化硅烧结体，其包含长度为30μm以上的线密度为35以上，边界相体积比为15体积％以下且含有不大于20μm的孔的晶粒 m最大直径，含量不超过3％。在制造滑动构件的方法中，可以通过研磨滑动表面并随后在惰性气体或大气中加热陶瓷来确保滑动表面的平滑度。可以获得可以在高速滑动等的严酷滑动条件下使用且具有优异的耐磨性的滑动构件。即使将滑动部件用于使用不含氯的氟碳化合物的压缩机等的滑动部作为冷却介质，也可以防止滑动面发生卡滞和异常磨损。

6. 发明授权

US5543371A Slide member and method of manufacturing the same 失效
标题翻译：滑动构件及其制造方法
公开(公告)号：US5543371A
公开(公告)日：1996-08-06
申请号：US150189
申请日：1993-11-30
申请人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
发明人： Tetsuya Katayama , Kaoru Murabe , Osamu Komura , Chihiro Kawai , Akira Yamakawa , Kenji Matsunuma , Norio Yasuoka , Matsuo Higuchi , Masaya Miyake
IPC分类号： C04B35/01 , C04B35/584 , C04B35/593 , C04B41/00 , C04B41/80 , F16C33/04 , F16C33/16 , C04B35/587
CPC分类号： C04B41/009 , C04B35/01 , C04B35/584 , C04B35/593 , C04B35/5935 , C04B41/0072 , C04B41/80 , F16C33/043 , F16C33/16 , C04B2111/00353 , Y10T428/252 , Y10T428/2991 , Y10T428/30
摘要： A slide member has a sliding surface made of ceramic and has a surface roughness of not more than 1.0 .mu.m in center line average roughness Ra. ceramic includes a silicon nitride sintered body, which contains crystal grains having a linear density of at least 35 per 30 .mu.m in length with a boundary phase volume ratio of not more than 15 volume %, and which contains pores of not more than 20 .mu.m in maximum diameter in a content of not more than 3%. In a method of manufacturing the slide member, it is possible to ensure smoothness of the sliding surface by grinding the sliding surface and thereafter heating the ceramic in either inert gas or an atmospheric air. A slide member that can be used under severe sliding conditions of high-speed sliding or the like and that has excellent wear resistance is obtained. Even if the slide member is used for a sliding part of a compressor or the like which employs a fluorocarbon containing no chlorine as a cooling medium, it is possible to prevent the occurrence of seizure and abnormal wear on the sliding surface.
摘要翻译： PCT No.PCT / JP93 / 00385 Sec。 371日期：1993年11月30日 102（e）日期1993年11月30日PCT 1993年3月29日PCT公布。公开号WO93 / 2002500 日期：1993年10月14日滑动部件具有由陶瓷制成的滑动面，中心线平均粗糙度Ra的表面粗糙度不大于1.0μm。陶瓷包括氮化硅烧结体，其包含长度为30μm以上的线密度为35以上，边界相体积比为15体积％以下，并且含有不大于20μm的孔的晶粒 m最大直径，含量不超过3％。在制造滑动构件的方法中，可以通过研磨滑动表面并随后在惰性气体或大气中加热陶瓷来确保滑动表面的平滑度。可以获得可以在高速滑动等的严酷滑动条件下使用且具有优异的耐磨性的滑动构件。即使将滑动部件用于使用不含氯的碳氟化合物作为冷却介质的压缩机等的滑动部件，也可以防止滑动面发生卡滞和异常磨损。

7. 发明授权

US5529962A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5529962A
公开(公告)日：1996-06-25
申请号：US406242
申请日：1995-03-14
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1,000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

8. 发明授权

US5393715A Aluminum nitride sintered body and method of preparing the same 失效
标题翻译：氮化铝烧结体及其制备方法
公开(公告)号：US5393715A
公开(公告)日：1995-02-28
申请号：US115446
申请日：1993-09-01
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/626 , H01L21/48 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800.degree. to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.
摘要翻译：氮化铝烧结体具有高的击穿电压，用作特别适用于高集成电路的衬底材料。氮化铝烧结体含有钛，其以氮化铝晶格内的固体溶质以至少50ppm至不大于1000ppm的重量比包含在其中。由电子自旋共振的吸收光谱确定的烧结体中不成对的电子浓度为至少1×10 13 / g。在氮化铝烧结体中存在钛和铝的氮氧化物的至少0.1重量％且不超过5.0重量％（以TiO 2计）。氮化铝烧结体的击穿电压为20kV / mm。烧结体是通过在氮气气氛中在800〜1400℃的温度下氮化氮化铝原料粉末，用烧结助剂向其中加入钛的氮氧化物，烧结该混合物而得到的。

9. 发明授权

US5482905A Aluminum nitride sintered body and method of producing the same 失效
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US5482905A
公开(公告)日：1996-01-09
申请号：US178642
申请日：1994-01-05
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/58
CPC分类号： C04B35/581
摘要： An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
摘要翻译：一种氮化铝烧结体，其包含属于纤锌矿六方晶系的氮化铝晶体，其中晶体的单位晶格的3轴a，b和c被定义为使得轴b和a的长度的比率b / a 在晶粒中心附近为1.000，位于晶界相附近的0.997-1.003范围内。氮化铝烧结体通过在具有一氧化碳或碳分压的非氧化性气氛中，在1700〜1900℃的温度下烧结以铝和氮为主要成分的原料粉末的成型体不超过200ppm，然后以5℃/分钟以下的速度将烧结体冷却至1500℃或更低温度。氮化铝烧结体具有大大提高的导热性，因此适用于半导体器件的热引脚，基板等。

10. 发明授权

US5449648A Method for preparing an aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体的制备方法
公开(公告)号：US5449648A
公开(公告)日：1995-09-12
申请号：US236707
申请日：1994-05-02
申请人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
发明人： Seiji Nakahata , Takahiro Matsuura , Kouichi Sogabe , Akira Yamakawa
IPC分类号： C04B35/581 , C04B35/626 , H01L21/48 , H01L23/15 , H05K1/03 , C04B35/58
CPC分类号： C04B35/581 , H01L21/4807
摘要： An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800 to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.
摘要翻译：氮化铝烧结体具有高的击穿电压，用作特别适用于高集成电路的衬底材料。氮化铝烧结体含有钛，其以氮化铝晶格内的固体溶质以至少50ppm至不大于1000ppm的重量比包含在其中。由电子自旋共振的吸收光谱确定的烧结体中不成对的电子浓度为至少1×10 13 / g。在氮化铝烧结体中存在钛和铝的氮氧化物的至少0.1重量％且不超过5.0重量％（以TiO 2计）。氮化铝烧结体的击穿电压为20kV / mm。烧结体是通过在氮气气氛中在800〜1400℃的温度下氮化氮化铝原料粉末，用烧结助剂向其中加入钛的氮氧化物，烧结该混合物而得到的。

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