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1. 发明授权

US5982623A Module for packaged IC 失效
标题翻译：封装IC模块
公开(公告)号：US5982623A
公开(公告)日：1999-11-09
申请号：US590465
申请日：1996-01-23
申请人： Takahiro Matsuo , Yoshio Maruyama , Osamu Hikita , Shinji Kadoriku
发明人： Takahiro Matsuo , Yoshio Maruyama , Osamu Hikita , Shinji Kadoriku
IPC分类号： H01L23/34 , H01L23/29 , H01L23/373 , H01L23/40 , H05K1/02 , H05K3/28 , H05K3/34 , H05K7/20
CPC分类号： H01L23/3737 , H01L23/295 , H05K3/284 , H01L2924/0002 , H05K1/0201 , H05K3/3421
摘要： A module is provided for a packaged IC designed to radiate heat by sealing the packaged IC. At least outer lead parts the packaged IC which are mounted on an electronic circuit board are sealed by a sealing material of a high thermal conductivity to form a sealing part.
摘要翻译：为封装的IC提供了一个模块，用于通过密封封装的IC来辐射热量。至少外部引线部件安装在电子电路板上的封装IC由具有高导热性的密封材料密封以形成密封部分。

2. 发明授权

US06323440B1 Part holder, substrate having same, and method of manufacturing same 失效
标题翻译：部件保持器，具有相同的基板及其制造方法
公开(公告)号：US06323440B1
公开(公告)日：2001-11-27
申请号：US09627891
申请日：2000-07-28
申请人： Yoshio Maruyama , Takahiro Matsuo , Osamu Hikita , Shinji Kadoriku
发明人： Yoshio Maruyama , Takahiro Matsuo , Osamu Hikita , Shinji Kadoriku
IPC分类号： H01R922
CPC分类号： H05K3/301 , H05K3/202
摘要： A part holder comprising holding members (8, 9) extending upward on a base (10) to hold a part (11), insertion holes (12) penetrating the base (10) and passing lead wires (12) of the part (11) through when the part (11) is held by the holding members, and supports (17) extending downward on the base (10) and adapted to be supported on a substrate (15), on which a predetermined electric circuit is formed.
摘要翻译：一种部件保持器，包括在基座（10）上向上延伸以保持部分（11）的保持构件（8,9），穿过基座（10）的插入孔（12）和穿过部分（11）的引线（12）），并且在基部（10）上向下延伸并且支撑在基板（15）上的支撑体（17），在基板（15）上形成有预定的电路。

3. 发明授权

US08421246B2 Joint structure and electronic component 有权
标题翻译：联合结构和电子元件
公开(公告)号：US08421246B2
公开(公告)日：2013-04-16
申请号：US12864826
申请日：2009-05-22
申请人： Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L29/43
CPC分类号： B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
摘要： A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
摘要翻译：接合结构将包括在电子部件中的电子元件12与包括在该电子部件中的电极14连接。接头结构包括焊料层，其含有0.2〜6重量％的铜，0.02〜0.2重量％的锗和93.8〜99.78重量％的铋，设置在焊料层和电极之间的镍层，以及设置在镍层和焊料层之间的阻挡层。这里，在电子元件和电极通过焊料层接合之后，阻挡层形成为具有0.5至4.5μm的平均厚度。

4. 发明申请

US20120268802A1 Laser Scanning Optical Device 审中-公开
标题翻译：激光扫描光学装置
公开(公告)号：US20120268802A1
公开(公告)日：2012-10-25
申请号：US13434687
申请日：2012-03-29
申请人： Yasushi Nagasaka , Naoki Tajima , Takahiro Matsuo
发明人： Yasushi Nagasaka , Naoki Tajima , Takahiro Matsuo
IPC分类号： G02B26/10
CPC分类号： G02B26/124
摘要： The laser scanning optical device comprises: a light source; a collimator lens; a light source holder; a lens holder; a light source unit holder; a first rotation axis; and a second rotation axis. The light source includes a plurality of light emitting points. The collimator lens converts diverging rays irradiated from the light source into parallel rays. The light source holder holds the light source. The lens holder holds the collimator lens. The light source unit holder holds the light source holder and the lens holder. The first rotation axis rotates the collimator lens with respect to an ideal optical axis. The second rotation axis rotates the light source unit holder while constantly maintaining a positional relationship between the light source holder and the lens holder.
摘要翻译：激光扫描光学装置包括：光源; 准直透镜; 光源支架; 镜头架; 光源单元支架; 第一旋转轴; 和第二旋转轴。光源包括多个发光点。准直透镜将从光源照射的发散光线转换为平行光线。光源支架保持光源。透镜架固定准直透镜。光源单元保持器保持光源保持器和透镜保持器。第一旋转轴相对于理想的光轴旋转准直透镜。第二旋转轴旋转光源单元保持器，同时保持光源保持器和透镜保持器之间的位置关系。

5. 发明申请

US20120020871A1 METHOD AND APPARATUS FOR MANUFACTURING PERCHLORATE 有权
标题翻译：用于制造百草枯的方法和装置
公开(公告)号：US20120020871A1
公开(公告)日：2012-01-26
申请号：US13260399
申请日：2010-03-26
申请人： Junichi Okuyama , Kumiko Yoshihisa , Yasunori Hamano , Takahiro Matsuo , Nobuhiko Kubota , Kazuo Uematsu , Muneo Ayabe
发明人： Junichi Okuyama , Kumiko Yoshihisa , Yasunori Hamano , Takahiro Matsuo , Nobuhiko Kubota , Kazuo Uematsu , Muneo Ayabe
IPC分类号： C01B11/18 , B01J19/08
CPC分类号： C25B1/28 , C25B15/08
摘要： The invention relates to a method of manufacturing a perchlorate including an electrolysis process (S1) in which, using an electrolysis tank (2) in which an anode section (4A) provided with an anode (4) and a cathode section (5A) provided a cathode (5) are divided by a cation exchange membrane (6), an aqueous solution of sodium chlorate is electrolytically oxidized in the anode section, a neutralization reaction process (S2) in which a substance that becomes alkaline when dissolved in water is added to the aqueous solution of perchloric acid in the anode section, which has been generated by the electrolytic oxidation, so as to synthesize a perchlorate by a neutralization reaction, and a crystallization method in which the perchlorate synthesized by the neutralization reaction process is formed into crystals, in which the crystallization method includes a crystallization method composed of three processes of an evaporation and crystallization process (S3) or an evaporation and concentration process (S21), a cooling and crystallization process (S22), and a separation process (S23).
摘要翻译：本发明涉及一种制造高氯酸盐的方法，包括电解方法（S1），其中使用其中设置阳极部分（4A）和阴极部分（5A）的电解槽（2）阴极（5）被阳离子交换膜（6）分割，氯酸钠水溶液在阳极部分被电解氧化，中和反应过程（S2）中加入溶解在水中变成碱性的物质通过电解氧化生成的阳极部中的高氯酸水溶液，通过中和反应合成高氯酸盐，将通过中和反应工序合成的高氯酸盐形成结晶的结晶法其中结晶方法包括由蒸发和结晶过程（S3）或蒸发和浓缩的三个方法组成的结晶方法（S21），冷却和结晶处理（S22）和分离处理（S23）。

6. 发明授权

US06306556B1 Pattern forming material and pattern forming method 失效
标题翻译：图案形成材料和图案形成方法
公开(公告)号：US06306556B1
公开(公告)日：2001-10-23
申请号：US09551656
申请日：2000-04-18
申请人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
发明人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03C1725
CPC分类号： G03F7/265 , G03F7/0045 , G03F7/039
摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0
摘要翻译：图案形成材料包括由以下通式表示的二元共聚物或通过使二元共聚物与另一基团进一步聚合而获得的三元或更高级共聚物：其中R1表示氢原子或烷基; R2和R3独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基，具有苯基的环状烷基或具有苯基的环状链烯基 ; R4表示氢原子或烷基; x满足0

7. 发明授权

US5679500A Method of forming micropatterns utilizing silylation and overall energy beam exposure 失效
标题翻译：使用甲硅烷基化和总能量束曝光形成微图案的方法
公开(公告)号：US5679500A
公开(公告)日：1997-10-21
申请号：US564822
申请日：1995-11-29
申请人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
发明人： Takahiro Matsuo , Kazuhiro Yamashita , Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/26 , G03F7/32 , H01L21/027 , H01L21/033 , G03F7/36 , G03F7/38
CPC分类号： G03F7/322 , G03F7/265 , G03F7/32 , H01L21/0271 , H01L21/0274 , H01L21/0275 , H01L21/0337
摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.
摘要翻译：通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。

8. 发明申请

US20130277202A1 METHOD FOR MANUFACTURING OZONE ICE AND APPARATUS FOR MANUFACTURING OZONE ICE 审中-公开
标题翻译：制造臭氧的方法和制造臭氧冰的装置
公开(公告)号：US20130277202A1
公开(公告)日：2013-10-24
申请号：US13923713
申请日：2013-06-21
申请人： Junichi Okuyama , Yasunori Hamano , Takahiro Matsuo , Yuka Yoshida , Hajime Kuwabara , Nobuhiko Kubota , Kazuo Uematsu , Kouichiro Wazumi
发明人： Junichi Okuyama , Yasunori Hamano , Takahiro Matsuo , Yuka Yoshida , Hajime Kuwabara , Nobuhiko Kubota , Kazuo Uematsu , Kouichiro Wazumi
IPC分类号： A23L3/37
CPC分类号： A23L3/37 , A23B4/08 , C01B13/10 , C01B2201/64 , C01B2201/82 , F25C1/00 , F25C2400/12 , F25D2303/085 , Y02E60/366
摘要： A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, ice 11 including oxygen gas g2 as gas bubbles b is produced and the produced ice 11 is irradiated with ultraviolet radiation, then the oxygen gas g2 in the ice 11 is ozonized to manufacture ozone ice 1.
摘要翻译：提供了一种用于制造臭氧冰的方法，其改进了其储存稳定性。在该方法中，产生包含作为气泡b的氧气g2的冰11，用紫外线照射产生的冰11，然后使冰11中的氧气g2臭氧化，制造臭氧冰1。

9. 发明授权

US06709791B1 Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this 有权
标题翻译：半色调相移光掩模和用于其的半色调相移光掩模的坯料以及使用其的图案形成方法
公开(公告)号：US06709791B1
公开(公告)日：2004-03-23
申请号：US09807276
申请日：2001-04-10
申请人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
发明人： Hiroshi Mohri , Toshiaki Motonaga , Chiaki Hatsuta , Norihito Ito , Naoya Hayashi , Toshio Onodera , Takahiro Matsuo , Toru Ogawa , Keisuke Nakazawa
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/34
摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.
摘要翻译：本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案。

10. 发明授权

US06376154B2 Pattern forming material and pattern forming method 失效
公开(公告)号：US06376154B2
公开(公告)日：2002-04-23
申请号：US09835441
申请日：2001-04-17
申请人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
发明人： Takahiro Matsuo , Masayuki Endo , Masamitsu Shirai , Masahiro Tsunooka
IPC分类号： G03F736
CPC分类号： G03F7/265 , G03F7/0045 , G03F7/039
摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0

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