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1. 发明申请

US20110164448A1 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 有权
标题翻译：隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器
公开(公告)号：US20110164448A1
公开(公告)日：2011-07-07
申请号：US13046567
申请日：2011-03-11
申请人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
发明人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
IPC分类号： G11C11/00 , G11B5/33 , G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译：阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。

2. 发明申请

US20100284103A1 MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS 有权
标题翻译：磁阻效应装置，磁头和信息存储装置
公开(公告)号：US20100284103A1
公开(公告)日：2010-11-11
申请号：US12842447
申请日：2010-07-23
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/127 , G11B20/10
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译：磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。

3. 发明申请

US20100053824A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20100053824A1
公开(公告)日：2010-03-04
申请号：US12548990
申请日：2009-08-27
申请人： Takahiro Ibusuki , Shinjiro Umehara , Masashige Sato
发明人： Takahiro Ibusuki , Shinjiro Umehara , Masashige Sato
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254
摘要： A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.
摘要翻译：磁阻元件包括：由铁磁材料制成的自由层，所述自由层被配置为在外部磁场的影响下改变磁化方向; 覆盖在自由层上的绝缘层，由绝缘材料制成的绝缘层; 覆盖在所述绝缘层上的非晶参考层，由铁磁材料制成的所述非晶参考层，所述非晶参考层被配置为沿预定方向固定所述磁化; 覆盖在非晶参考层上的晶体层，含有晶粒的晶体层; 覆盖在所述晶体层上的非磁性层，所述非磁性层含有从所述晶体层中的晶粒生长的晶粒; 以及覆盖在所述非磁性层上的被钉扎层，所述被钉扎层被配置为沿预定方向固定所述磁化。

4. 发明申请

US20090244790A1 MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT 审中-公开
标题翻译：磁性元素和层状物体
公开(公告)号：US20090244790A1
公开(公告)日：2009-10-01
申请号：US12409330
申请日：2009-03-23
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01L43/08 , H01L43/10
摘要： An magnetoresistive element includes: an underlayer made of a nitride; a pinning layer made of an antiferromagnetic layer overlaid on the underlayer, the pinning layer having the close-packed surface in the (111) surface of crystal, the pinning layer setting the (002) surface of crystal in parallel with the surface of the underlayer; a reference layer overlaid on the pinning layer, the reference layer having the magnetization fixed in a predetermined direction based on the exchange coupling with the pinning layer; a nonmagnetic layer overlaid on the reference layer, the nonmagnetic layer made of a nonmagnetic material; and a free layer overlaid on the nonmagnetic layer, the free layer made of a ferromagnetic material, the free layer enabling a change in the direction of the magnetization under the influence of an external magnetic field.
摘要翻译：磁阻元件包括：由氮化物制成的底层; 由覆盖在底层上的反铁磁层制成的钉扎层，该钉扎层在晶体的（111）表面具有紧密堆积的表面，钉扎层将晶体的（002）表面与底层的表面平行设置 ; 覆盖在钉扎层上的参考层，基于与钉扎层的交换耦合，具有沿预定方向固定的磁化的参考层; 覆盖在参考层上的非磁性层，由非磁性材料制成的非磁性层; 以及覆盖在非磁性层上的自由层，由铁磁材料制成的自由层，该自由层能够在外部磁场的影响下使磁化方向发生变化。

5. 发明申请

US20090097170A1 FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：铁磁结构元件，磁记录装置和磁记忆装置
公开(公告)号：US20090097170A1
公开(公告)日：2009-04-16
申请号：US12202789
申请日：2008-09-02
申请人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
发明人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/16 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L27/228 , H01L43/10
摘要： A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer.
摘要翻译：铁磁隧道结元件是磁阻效应元件，其中电阻根据施加的磁场而变化。铁磁隧道结元件包括其中保持至少一部分磁化方向的钉扎层和形成在被钉扎层上的绝缘层，产生电子可以通过隧道效应流过的能量势垒。在绝缘层上形成由含硼原子的第一铁磁材料制成的第一自由层。在第一自由层中，磁化方向在外部磁场的影响下切换。在第一自由层上形成由含有硼原子的第一铁磁材料制成的第二自由层。第二自由层的磁化方向在外部磁场的影响下切换，与第一自由层交换耦合。

6. 发明申请

US20080112093A1 Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 审中-公开
标题翻译：隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器
公开(公告)号：US20080112093A1
公开(公告)日：2008-05-15
申请号：US11899486
申请日：2007-09-06
申请人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
发明人： Masashige Sato , Shinjiro Umehara , Takahiro Ibusuki
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译：阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。

7. 发明申请

US20080070063A1 Exchange coupling film and magnetic device 审中-公开
标题翻译：交换耦合膜和磁性器件
公开(公告)号：US20080070063A1
公开(公告)日：2008-03-20
申请号：US11898730
申请日：2007-09-14
申请人： Takahiro Ibusuki , Masashige Sato
发明人： Takahiro Ibusuki , Masashige Sato
IPC分类号： G11B5/39 , G11B5/33 , G11B5/66
CPC分类号： G11B5/66 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/11 , Y10T428/1107
摘要： An exchange coupling film of the present invention has a sandwich structure with a non-magnetic layer of a Ru—Rh alloy between two ferromagnetic layers. In a case of applying the exchange coupling film of the present invention to a magnetic head (reading element), the non-magnetic layer is set to have, for example, a thickness of 0.4 nm to 0.5 nm, and a Rh content of 5 at % to 40 at %. In a case of applying the exchange coupling film of the present invention to a magnetic recording medium, the non-magnetic layer is set to have, for example, a thickness of 0.4 nm to 0.6 nm, and a Rh content of 5 at % to 70 at %. In a case of applying the exchange coupling film of the present invention to an MRAM, the non-magnetic layer is set to have, for example, a thickness of 0.3 nm to 0.7 nm, and a Rh content of 5 at % to 40 at %.
摘要翻译：本发明的交换耦合膜具有在两个铁磁层之间具有Ru-Rh合金的非磁性层的夹层结构。在将本发明的交换耦合膜施加到磁头（读取元件）的情况下，非磁性层被设定为具有例如0.4nm〜0.5nm的厚度，并且Rh含量为5 以％至40at％。在将本发明的交换耦合膜施加到磁记录介质的情况下，非磁性层的厚度例如为0.4nm〜0.6nm，Rh含量为5原子％〜 70原子％。在将本发明的交换耦合膜施加于MRAM的情况下，非磁性层的厚度例如为0.3nm〜0.7nm，Rh含量为5at％〜40at ％。

8. 发明授权

US08194362B2 Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head 有权
标题翻译：包括在基板上依次层叠的氮化物底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁性层的磁阻效应器件，以及包括同一磁阻效应器件的磁头以及包括该磁阻效应器件的信息存储设备相同的磁头
公开(公告)号：US08194362B2
公开(公告)日：2012-06-05
申请号：US12842447
申请日：2010-07-23
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译：磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。

9. 发明授权

US08184407B2 Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body 有权
标题翻译：磁阻效应器件，磁性层压结构体及磁性层压结构体的制造方法
公开(公告)号：US08184407B2
公开(公告)日：2012-05-22
申请号：US12041396
申请日：2008-03-03
申请人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
发明人： Takahiro Ibusuki , Masashige Sato , Shinjiro Umehara
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/15 , G11C11/16 , H01L43/08 , H01L43/12
摘要： An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer (7) made of nonmagnetic material is disposed over the reference layer. A free layer (8) made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.
摘要翻译：由NiFeN制成的下层（2）设置在基板的主表面上。由含有Ir和Mn的反铁磁材料制成的钉扎层（3）设置在下层上。由铁磁材料构成的参考层（4c），其磁化方向通过与钉扎层直接或经由另一铁磁材料层交换耦合来固定，设置在钉扎层之上。由非磁性材料制成的非磁性层（7）设置在参考层上。由铁磁材料制成的自由层（8），其磁化方向根据外部磁场而变化，设置在非磁性层上。

10. 发明授权

US08081404B2 Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer 有权
标题翻译：磁阻元件包括非晶参考层，晶体层和钉扎层
公开(公告)号：US08081404B2
公开(公告)日：2011-12-20
申请号：US12548990
申请日：2009-08-27
申请人： Takahiro Ibusuki , Shinjiro Umehara , Masashige Sato
发明人： Takahiro Ibusuki , Shinjiro Umehara , Masashige Sato
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254
摘要： A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.
摘要翻译：磁阻元件包括：由铁磁材料制成的自由层，所述自由层被配置为在外部磁场的影响下改变磁化方向; 覆盖在自由层上的绝缘层，由绝缘材料制成的绝缘层; 覆盖在所述绝缘层上的非晶参考层，由铁磁材料制成的所述非晶参考层，所述非晶参考层被配置为沿预定方向固定所述磁化; 覆盖在非晶参考层上的晶体层，含有晶粒的晶体层; 覆盖在所述晶体层上的非磁性层，所述非磁性层含有从所述晶体层中的晶粒生长的晶粒; 以及覆盖在所述非磁性层上的被钉扎层，所述被钉扎层被配置为沿预定方向固定所述磁化。

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