会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Plasma etching method and device manufacturing method thereby
    • 等离子体蚀刻方法及其制造方法
    • US5575887A
    • 1996-11-19
    • US409530
    • 1995-03-24
    • Takahiko YoshidaKazushi AsamiMuneo YorinagaTsuyoshi Fukada
    • Takahiko YoshidaKazushi AsamiMuneo YorinagaTsuyoshi Fukada
    • H05H1/46C23C14/40C23F4/00H01J37/32H01L21/00H01L21/302H01L21/3065
    • H01L21/67069H01J37/32082H01J37/32697
    • A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.
    • 公开了一种等离子体蚀刻方法,其可以通过高速蚀刻并且不损坏形成在基板表面上的元件部分而在基板上形成凹部和/或开口部。 在具有一个表面作为元件部分形成表面的半导体衬底上,并且其上具有作为蚀刻表面的绝缘膜的另一表面通过对反应性施加高频电力而通过蚀刻形成凹部和/或开口部分 气体并产生等离子体。 基板设置在具有接地电位的电极上,绝缘膜位于下侧,并且具有接地电位的导电部件材料设置在基板周围。 当导电部件材料的一端与基板的蚀刻表面的一侧接触时,在基板表面上产生的电荷移动到导电部件材料,并且基板的电位降低。
    • 2. 发明授权
    • Process of plasma etching silicon
    • 等离子体蚀刻硅的工艺
    • US5536364A
    • 1996-07-16
    • US253704
    • 1994-06-03
    • Takahiko YoshidaKazushi AsamiMuneo YorinagaYoshimi Yoshino
    • Takahiko YoshidaKazushi AsamiMuneo YorinagaYoshimi Yoshino
    • H01L21/3065H01L21/308
    • H01L21/3065H01L21/3081Y10S438/945
    • A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode-coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing in that an etchant is a mixed gas of sulfur hexafluoride and oxygen and an etching mask covering the substrate, except for a portion where the recess or opening is to be formed, is made of chromium or a chromium compound. Preferably the distance between the electrodes is 10 to 30 mm, the volume ratio of sulfur hexafluoride to oxygen is 90:10 to 60:40, the pressure of the etchant gas is 0.15 to 0.4 Torr (20 to 53 Pa), and the temperature of the substrate is not less than 40.degree. C.
    • 一种等离子体蚀刻工艺,用于通过在阳极耦合的平面型等离子体蚀刻装置中的一对电极之间产生等离子体并且利用等离子体蚀刻位于其中一个电极上的硅衬底,在硅衬底上形成凹部或开口, 其特征在于,蚀刻剂是六氟化硫和氧气的混合气体,除了要形成凹部或开口的部分之外,覆盖基板的蚀刻掩模由铬或铬化合物制成。 优选地,电极之间的距离为10〜30mm,六氟化硫与氧的体积比为90:10〜60:40,蚀刻剂气体的压力为0.15〜0.4乇(20〜53Pa),温度 的基材不低于40℃