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1. 发明申请

US20080105297A1 Solar Cell 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20080105297A1
公开(公告)日：2008-05-08
申请号：US11547656
申请日：2005-11-28
申请人： Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
发明人： Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
IPC分类号： H01L31/04 , H01L31/02 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/0504 , Y02E10/50
摘要： A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.
摘要翻译：太阳能电池包括光电转换层，光电转换层的一个表面上的第一电极，光电转换层的另一表面上的第二电极和光电转换层的另一个表面上的第三电极。第三电极基本上是矩形的，其角部在光电转换层的面内方向上倒圆，并且在其周边与第二电极重叠。

2. 发明授权

US07910823B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US07910823B2
公开(公告)日：2011-03-22
申请号：US11597108
申请日：2005-11-28
申请人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
发明人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A solar cell includes a photoelectric conversion substrate, a first electrode on one surface of the substrate, a second electrode on the other surface of the substrate, and a third electrode on the other surface of the substrate. The third electrode extracts electric power from the second electrode, and overlaps the second electrode at the periphery in the in-plane direction of the photoelectric conversion substrate. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is not less than 10 micrometers and not more than 30 micrometers.
摘要翻译：太阳能电池包括光电转换基板，在基板的一个表面上的第一电极，在基板的另一个表面上的第二电极和在基板的另一个表面上的第三电极。第三电极从第二电极提取电力，并且在光电转换基板的面内方向的周边与第二电极重叠。第二电极的厚度大于第三电极的厚度，第二电极的厚度与第三电极的厚度之差不小于10微米至30微米。

3. 发明申请

US20100193028A1 SOLAR CELL 有权
标题翻译：太阳能电池
公开(公告)号：US20100193028A1
公开(公告)日：2010-08-05
申请号：US12756388
申请日：2010-04-08
申请人： Takahiko NISHIDA , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
发明人： Takahiko NISHIDA , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0504 , Y02E10/50
摘要： A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode provided on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.
摘要翻译：太阳能电池包括光电转换层，在光电转换层的一个表面上的第一电极，设置在光电转换层的另一个表面上的第二电极和在光电转换层的另一个表面上的第三电极。第三电极基本上是矩形的，其角部在光电转换层的面内方向上倒圆，并且在其周边与第二电极重叠。

4. 发明授权

US08450602B2 Solar cell and manufacturing method thereof 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08450602B2
公开(公告)日：2013-05-28
申请号：US13023910
申请日：2011-02-09
申请人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
发明人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A solar cell comprises a substrate that includes a photoelectric conversion function, a first electrode provided on one surface of the substrate, a second electrode provided on other surface of the substrate, and a third electrode provided on the other surface of the substrate with its periphery overlapping the second electrode in the in-plane direction of the substrate for extracting an electric power from the second electrode. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is within a range from equal to or more than 10 micrometers to equal to or less than 30 micrometers. Thereby, in the solar cell, an electrode separation (alloy separation) can be effectively prevented.
摘要翻译：一种太阳能电池包括：包含光电转换功能的基板，设置在基板的一个表面上的第一电极，设置在该基板的另一个表面上的第二电极;以及设置在基板的另一个表面上的第三电极，在所述基板的面内方向上重叠所述第二电极，以从所述第二电极提取电力。第二电极的厚度大于第三电极的厚度，并且第二电极的厚度与第三电极的厚度之间的差在等于或大于10微米至等于或小于30的范围内微米。因此，在太阳能电池中，能够有效地防止电极分离（合金分离）。

5. 发明授权

US08173895B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US08173895B2
公开(公告)日：2012-05-08
申请号：US12756388
申请日：2010-04-08
申请人： Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
发明人： Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa , Shoichi Karakida
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0504 , Y02E10/50
摘要： A solar cell includes a photoelectric conversion layer, a first electrode on one surface of the photoelectric conversion layer, a second electrode provided on other surface of the photoelectric conversion layer, and a third electrode on the other surface of the photoelectric conversion layer. The third electrode is substantially rectangular with its corners rounded off in the in-plane direction of the photoelectric conversion layer, and overlaps the second electrode at the periphery thereof.
摘要翻译：太阳能电池包括光电转换层，在光电转换层的一个表面上的第一电极，设置在光电转换层的另一个表面上的第二电极和在光电转换层的另一个表面上的第三电极。第三电极基本上是矩形的，其角部在光电转换层的面内方向上倒圆，并且在其周边与第二电极重叠。

6. 发明申请

US20070256733A1 Solar Cell and Manufacturing Method Thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20070256733A1
公开(公告)日：2007-11-08
申请号：US11597108
申请日：2005-11-28
申请人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
发明人： Shoichi Karakida , Takahiko Nishida , Mitsunori Nakatani , Hiroaki Morikawa
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , Y02E10/50
摘要： A solar cell includes a photoelectric conversion substrate, a first electrode on one surface of the substrate, a second electrode on the other surface of the substrate, and a third electrode on the other surface of the substrate. The third electrode extracts electric power from the second electrode, and overlaps the second electrode at the periphery in the in-plane direction of the photoelectric conversion substrate. The thickness of the second electrode is larger than that of the third electrode, and the difference between the thickness of the second electrode and that of the third electrode is not less than 10 micrometers and not more than 30 micrometers.
摘要翻译：太阳能电池包括光电转换基板，在基板的一个表面上的第一电极，在基板的另一个表面上的第二电极和在基板的另一个表面上的第三电极。第三电极从第二电极提取电力，并且在光电转换基板的面内方向的周边与第二电极重叠。第二电极的厚度大于第三电极的厚度，第二电极的厚度与第三电极的厚度之差不小于10微米至30微米。

7. 发明授权

US5547789A Pattern transfer mask 失效
标题翻译：模式传输掩码
公开(公告)号：US5547789A
公开(公告)日：1996-08-20
申请号：US340865
申请日：1994-11-15
申请人： Mitsunori Nakatani , Yoshiki Kojima , Hiroyuki Minami
发明人： Mitsunori Nakatani , Yoshiki Kojima , Hiroyuki Minami
IPC分类号： H01L29/812 , G03F1/00 , G03F7/20 , H01L21/027 , H01L21/285 , H01L21/338 , G03F9/00 , G03F1/14
CPC分类号： H01L29/66863 , G03F1/50 , G03F7/2002 , G03F7/2022 , H01L21/0274 , H01L21/28587
摘要： A pattern transfer mask for use in an optical exposure process includes a transparent substrate having a surface; a light shielding film of a desired pattern disposed on the surface of the transparent substrate for shielding a part of a photoresist film from light transmitted through the mask and incident on the photoresist film and for transferring the desired pattern to the photoresist film; and a plurality of projections disposed at equal intervals on one side of and contacting the light shielding film pattern for reducing the intensity of light transmitted through the transparent substrate where the projections are present.
摘要翻译：用于光学曝光工艺的图案转印掩模包括具有表面的透明衬底; 设置在所述透明基板的表面上的用于屏蔽光阻膜的一部分的光的屏蔽膜与透过所述掩模的光入射到所述光致抗蚀剂膜上并将所需图案转印到所述光致抗蚀剂膜上; 以及多个突起，以等间隔设置在遮光膜图案的一侧并与遮光膜图案接触，用于降低透射透过透明基板的光的强度。

8. 发明授权

US5240869A Method for fabricating a field effect transistor 失效
标题翻译：制作场效应晶体管的方法
公开(公告)号：US5240869A
公开(公告)日：1993-08-31
申请号：US785109
申请日：1991-10-30
申请人： Mitsunori Nakatani
发明人： Mitsunori Nakatani
IPC分类号： H01L21/28 , H01L21/285 , H01L21/338 , H01L29/423 , H01L29/812
CPC分类号： H01L29/66863 , H01L21/28587 , H01L21/28593 , H01L29/42316 , H01L29/8128
摘要： A method for fabrication a field effect transistor having a T-shaped gate electrode in a stepped recess includes forming an active layer in a substrate, forming two spaced apart ohmic electrodes on the active layer, forming spaced apart first side wall films on side walls of and between the two ohmic electrodes, forming a first recess by etching the active layer using the first side wall films as a mask, forming spaced apart second side wall films in the first recess contacting the first side wall films, forming a second recess narrower than and within the first recess by etching the active layer using the second side wall films as a mask, and forming a T-shaped gate in the second recess in contact with the second side wall films.

9. 发明授权

US5869903A Sealed semiconductor device including opposed substrates and metal wall 失效
标题翻译：密封半导体器件包括相对的基板和金属壁
公开(公告)号：US5869903A
公开(公告)日：1999-02-09
申请号：US792731
申请日：1997-01-31
申请人： Mitsunori Nakatani , Hirofumi Nakano
发明人： Mitsunori Nakatani , Hirofumi Nakano
IPC分类号： H01L21/60 , H01L23/12 , H01L23/29 , H01L23/31 , H01L23/49 , H01L23/498 , H01L23/66 , H01L23/48 , H01L23/52
CPC分类号： H01L24/10 , H01L23/4985 , H01L23/66 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/10329 , H01L2924/14 , H01L2924/1423 , H01L2924/3025
摘要： A semiconductor device includes a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate; bump wirings on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having one surface on which substrate wirings corresponding to the bump wirings are located, the wiring substrate being disposed on the circuit substrate so that the substrate wirings are electrically connected to the bump wirings, and in contact with the metal wall, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate. An electromagnetic shielding effect sufficient for use in a high-frequency circuit is obtained and fabricating cost is considerably reduced.
摘要翻译：一种半导体器件包括具有第一表面的电路衬底，高频电路位于该第一表面上; 设置在所述电路基板的第二表面上的第一金属层; 在电路基板的第一表面上的凸起布线并且电连接到高频电路; 设置在围绕高频电路的电路基板的第一表面上的金属壁; 具有一个表面的布线基板，衬底布线对应于所述凸起布线，所述布线基板设置在所述电路基板上，使得所述基板布线电连接到所述凸起布线，并且与所述金属壁接触，密封区域包括高频电路; 以及设置在所述布线基板的第二表面上的第二金属层。获得了足够用于高频电路的电磁屏蔽效果，并大大降低了制造成本。

10. 发明授权

US5112766A Method of manufacturing field effect transistors 失效
标题翻译：制造场效应晶体管的方法
公开(公告)号：US5112766A
公开(公告)日：1992-05-12
申请号：US730626
申请日：1991-07-16
申请人： Takayuki Fujii , Mitsunori Nakatani
发明人： Takayuki Fujii , Mitsunori Nakatani
IPC分类号： H01L21/22 , H01L21/338 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/812
CPC分类号： H01L29/66878 , H01L29/1075 , H01L29/42316
摘要： A method of producing a field effect transistor includes forming a first conductivity type active layer having a first concentration of dopant impurities producing the first conductivity type in a semi-insulating semiconductor substrate, forming a mask film on the substrate on part of the first conductivity type region, depositing a gate metal film on the mask film and on the substrate not covered by the mask film, etching the gate metal film and leaving a portion of the gate metal film on the substrate adjacent to and contacting the mask film as a gate electrode, implanting dopant impurities producing a second conductivity type in the substrate using the mask film and the gate electrode as an implantation mask, annealing the substrate at an elevated temperature to activate the implanted dopant impurities whereby some of the implanted dopant impurities diffuse laterally within the substrate to produce a second conductivity type region in the substrate underneath part of the gate electrode, removing the mask film, implanting dopant impurities producing the first conductivity type in the substrate using the gate electrode as an ion implantation mask to produce first and second doped regions in the substrate on opposite sides of the gate electrode and having a second concentration of dopant impurities larger than the first concentration, the second doped region being disposed within the second conductivity type region that extends underneath part of the gate electrode, and forming a source electrode on the first doped region and a drain electrode on the second doped region.

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