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1. 发明授权

US06774088B2 Rare earth-Ba-Cu complex composition and method of producing superconductor using same 失效
标题翻译：稀土 - Ba-Cu络合物的组成及使用其制造超导体的方法
公开(公告)号：US06774088B2
公开(公告)日：2004-08-10
申请号：US10086377
申请日：2002-03-04
申请人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
发明人： Takaaki Manabe , Iwao Yamaguchi , Tetsuo Tsuchiya , Toshiya Kumagai , Susumu Mizuta , Susumu Nakamura
IPC分类号： H01B100
CPC分类号： H01L39/2425 , C23C18/1216 , C23C18/1295 , Y10S505/70 , Y10S505/734 , Y10S505/741
摘要： A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
摘要翻译：含有具有稀土元素金属物质，钡和铜以及三氟乙酸或五氟丙酸配体配体，吡啶配体和乙酰丙酮配体的配合物的金属络合物组合物。可以通过将上述金属络合物组合物的有机溶剂溶液涂布到基材上并通过热处理涂层来获得超导膜。

2. 发明授权

US06576302B1 Method for producing a metal oxide and method for forming a minute pattern 失效
标题翻译：金属氧化物的制造方法及形成微小图案的方法
公开(公告)号：US06576302B1
公开(公告)日：2003-06-10
申请号：US09513814
申请日：2000-02-25
申请人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
发明人： Susumu Mizuta , Tetsuo Tsuchiya , Akio Watanabe , Yoji Imai , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Hiroyuki Niino , Akira Yabe
IPC分类号： C08J718
CPC分类号： C23C18/14 , C23C18/06 , C23C18/1216
摘要： There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.
摘要翻译：公开了一种金属氧化物的制造方法，该方法包括以下步骤：将金属有机化合物（例如金属有机酸盐，金属乙酰丙酮络合物和具有6个或更多个碳原子的有机基团的金属醇盐）在溶剂中以提供溶液状态，将溶液施加到基材上，干燥溶液，并使所得基板对波长为400nm以下的激光进行照射，以在基板上形成金属氧化物。根据该方法，可以在常规已知的应用热分解方法中采用的高温下进行金属氧化物而不进行热处理。

3. 发明申请

US20120196150A1 RESISTOR FILM FOR BOLOMETER 有权
标题翻译：电阻膜电阻
公开(公告)号：US20120196150A1
公开(公告)日：2012-08-02
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： C01G31/02 , B32B9/00 , C08J7/18 , B05D3/02 , B05D3/06
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

4. 发明授权

US06624384B2 Method for manufacturing infrared ray sensor 有权
公开(公告)号：US06624384B2
公开(公告)日：2003-09-23
申请号：US09984853
申请日：2001-10-31
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
IPC分类号： B23K2600
CPC分类号： C23C26/02 , G01J5/20
摘要： In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.

5. 发明授权

US07781030B2 Infrared sensor manufacturing method suitable for mass production 有权
标题翻译：红外传感器制造方法适合批量生产
公开(公告)号：US07781030B2
公开(公告)日：2010-08-24
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta, legal representative , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
IPC分类号： B05D3/06 , G01J5/00
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译：根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序，将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤以覆盖具有预定图案和桥结构的测辐射热电阻。

6. 发明申请

US20070272863A1 Infrared sensor manufacturing method suitable for mass production 有权
标题翻译：红外传感器制造方法适合批量生产
公开(公告)号：US20070272863A1
公开(公告)日：2007-11-29
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
IPC分类号： G01J5/00 , C23C14/00 , C25D5/00
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译：根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序，将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤以覆盖具有预定图案和桥结构的测辐射热电阻。

7. 发明授权

US06585909B2 Method of manufacturing oxide thin film for bolometer 有权
公开(公告)号：US06585909B2
公开(公告)日：2003-07-01
申请号：US09984846
申请日：2001-10-31
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Toshiya Kumagai , Tsutomu Yoshitake , Yuichi Shimakawa , Yoshimi Kubo
IPC分类号： H01L2100
CPC分类号： H01L37/00 , C23C8/10 , C23C26/00 , G01K17/003
摘要： An oxide for use in a bolometer with an oxide thin-film formed is manufactured on an insulating substrate. Metal organic compound is dissolved in solvent to form solution during manufacturing the oxide thin-film. The solution is applied on the insulating substrate, and the applied solution is dried. A bond between carbon and oxygen is cut and decomposed by irradiating a laser ray with wavelength of 400 nm or less. A generated oxide is crystallized.

8. 发明授权

US08871363B2 Resistor film for bolometer 有权
标题翻译：测辐射热敏电阻膜
公开(公告)号：US08871363B2
公开(公告)日：2014-10-28
申请号：US13393556
申请日：2010-09-01
申请人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
发明人： Tetsuo Tsuchiya , Masami Nishikawa , Tomohiko Nakajima , Toshiya Kumagai , Takaaki Manabe
IPC分类号： B32B5/14 , B32B9/00 , C01G31/02 , G01J5/20 , H01C3/04 , H01C17/065 , H01C7/02 , G01J5/02 , G01J5/04
CPC分类号： H01C17/06533 , C01G31/02 , C01P2002/02 , C01P2002/04 , C01P2002/80 , C01P2006/90 , G01J5/024 , G01J5/046 , G01J5/20 , H01C7/026 , H01L21/02565 , H01L21/02581 , Y10T428/12458 , Y10T428/12493 , Y10T428/12611
摘要： Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer.Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.
摘要翻译：提供了包含氧化钒作为主要成分的电阻膜，其中金属 - 绝缘体转变在室温附近在电阻的温度变化中表示，在温度变化或电流变化的电阻变化中没有迟滞温度宽度小于1.5K，即使有迟滞，并且在测辐射热计中使用时可以提供高精度的测量。通过经由激光照射等处理有机体化合物的涂膜而制造包含氧化钒作为主要成分的电阻膜时，结晶相和非结晶（非晶）相共存在电阻膜中。

9. 发明授权

US07771531B2 Manufacturing method and usage of crystallized metal oxide thin film 有权
标题翻译：结晶金属氧化物薄膜的制造方法和用途
公开(公告)号：US07771531B2
公开(公告)日：2010-08-10
申请号：US11836387
申请日：2007-08-09
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Akio Watanabe , Toshiya Kumagai
IPC分类号： C30B11/00 , C30B21/02 , C04B35/64
CPC分类号： H01G4/10 , C09K11/7787 , C23C18/14 , C30B23/06 , C30B25/105 , C30B29/16 , H01L39/2461
摘要： Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.
摘要翻译：提供了在玻璃或硅基板上的结晶化稀土类薄膜的制造方法。该结晶化金属氧化物薄膜的制造方法包括：保持金属有机薄膜或金属氧化物膜的工序，所述金属有机薄膜或金属氧化物膜含有选自Y，Dy，Sm，Gd中的至少一种稀土金属元素，在250〜600℃的温度下在基板上形成的Ho，Eu，Tm，Tb，Er，Ce，Pr，Yb，La，Nd和Lu，以及将有机金属薄膜或金属氧化物同时照射波长为200nm以下的紫外线。

10. 发明申请

US20080044590A1 Manufacturing Method of Phosphor Film 审中-公开
标题翻译：荧光膜的制造方法
公开(公告)号：US20080044590A1
公开(公告)日：2008-02-21
申请号：US11839270
申请日：2007-08-15
申请人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
发明人： Tetsuo Tsuchiya , Tomohiko Nakajima , Toshiya Kumagai
IPC分类号： C08J7/18
CPC分类号： C09K11/7703 , C03C17/256 , C03C17/3417 , C03C2217/212 , C03C2217/228 , C03C2217/23 , C03C2217/242 , C03C2217/948 , C03C2218/116 , C03C2218/32
摘要： Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.
摘要翻译：提供一种能够在玻璃或硅衬底上形成结晶的与渗透相关的Ti，Zr氧化物薄膜的高性能荧光体薄膜材料的制造方法。这种荧光体薄膜的制造方法包括：形成通过添加选自由Ce，Pr，Nd，Sm，Eu，Gd，Tb等构成的组中的至少一种的有机金属薄膜或金属氧化物膜的工序， Dy，Ho，Er，Tm，Yb和Lu与由组成式ABO 3，A 2 BO 4表示的金属氧化物反应， A 3，B 2 O 7（前提是A，B，O位点可能存在缺陷），其中A是选择的元素从Ca，Sr和Ba中选出，B是在基板上选自Ti和Zr的金属元素，以及在室温下向紫外灯照射紫外线，然后在保持基板的同时照射紫外线激光的步骤 400℃以下。在结晶后，将该膜进行氧化处理。

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