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1. 发明授权

US5935549A Method of producing bismuth layered compound 失效
标题翻译：生产铋层状化合物的方法
公开(公告)号：US5935549A
公开(公告)日：1999-08-10
申请号：US621618
申请日：1996-03-26
申请人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
IPC分类号： C01G35/00 , C01G29/00 , C01F1/00
CPC分类号： C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2006/40
摘要： A process is disclosed for making a bismuth layered compound, such as Bi.sub.2 SrTa.sub.2 O.sub.9, by forming mixture of Bi.sub.2 O.sub.3, Ta.sub.2 O.sub.5 and a compound selected from strontium hydroxide or strontium nitrate, grinding the mixture, shaping the ground mixture at elevated temperature and pressure to form a pellet of bismuth strontium tantalum oxide having a fluorite structure and then heating the pellet in a flow of oxygen at 800-1000.degree. C. until a single phase bismuth layered compound is obtained.
摘要翻译：公开了通过形成Bi 2 O 3，Ta 2 O 5和选自氢氧化锶或硝酸锶的化合物的混合物来制备铋层状化合物如Bi 2 SrO 2 O 9的方法，研磨该混合物，在高温和高压下成型研磨的混合物以形成颗粒的具有萤石结构的铋锶钽氧化物，然后在800-1000℃的氧气流中加热沉淀，直至获得单相铋层状化合物。

2. 发明授权

US06251360B1 Method of producing bismuth layered compound 有权
标题翻译：生产铋层状化合物的方法
公开(公告)号：US06251360B1
公开(公告)日：2001-06-26
申请号：US09369867
申请日：1999-08-09
申请人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
IPC分类号： C01G2900
CPC分类号： C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2006/40
摘要： A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi2SrTa2O9.
摘要翻译：一种生产铋层状化合物的方法，包括以下步骤：提供基材，将含有Bi，Sr和Ta的化合物溶解在有机溶剂中以形成Bi:Sr:Ta体积比为2:1:2的溶液，蒸发溶液并将蒸发的溶液沉积在基底上，加热基底以形成具有萤石结构的薄膜，并在氧化气氛中加热薄膜以将具有萤石结构的薄膜转化为包含Bi 2 Sr 2 O 9的薄膜。

3. 发明授权

US06004392A Ferroelectric capacitor and manufacturing the same using bismuth layered oxides 失效
标题翻译：铁电电容器和使用铋层状氧化物制造相同
公开(公告)号：US06004392A
公开(公告)日：1999-12-21
申请号：US709391
申请日：1996-09-06
申请人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami
发明人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami
IPC分类号： C23C16/40 , C30B25/02 , H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： H01L28/55 , C23C16/40 , C23C16/407 , C30B25/02 , C30B29/16 , C30B29/22 , H01L21/31691
摘要： Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.
摘要翻译：描述了一种稳定的半导体存储器件，其在CVD方法中不受反应压力的半导体衬底的热处理温度的影响，并且不会因重复的数据写入而导致的剩磁减小; 以及这种器件的制造方法，其包括通过CVD法形成含有作为元素铋的元素铋的铁电体膜，起作用作为原料的铋醇盐化合物，并且使用铁电体膜作为形成保存层的膜半导体存储器件的电容。

4. 发明授权

US06995069B2 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method 失效
公开(公告)号：US06995069B2
公开(公告)日：2006-02-07
申请号：US10264448
申请日：2002-10-03
申请人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
发明人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
IPC分类号： H01L21/20
CPC分类号： H01L28/55 , H01L21/02197 , H01L21/02271 , H01L21/31122 , H01L21/32136 , H01L28/75
摘要： In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bix, Sry, Ta2.0 and Oz, where the atomic ratio may be within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O—C2H5)3, Bi(O—iC3H7)3, Bi(O-tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2. 2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(TD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i-OC3H7)4THD.

5. 发明授权

US06544857B1 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method 失效
标题翻译：电介质电容器制造方法和半导体存储器件的制造方法
公开(公告)号：US06544857B1
公开(公告)日：2003-04-08
申请号：US09262329
申请日：1999-03-04
申请人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
发明人： Katsuyuki Hironaka , Masataka Sugiyama , Chiharu Isobe , Takaaki Ami
IPC分类号： H01L2120
CPC分类号： H01L28/55 , H01L21/02197 , H01L21/02271 , H01L21/31122 , H01L21/32136 , H01L28/75
摘要： In a process for manufacturing a dielectric capacitor, an IrO2 film, an Ir film, an amorphous film, and a Pt film-are sequentially made on a Si substrate. The SBT film may comprise BixSryTa2.0Oz, where the atomic composition ratio maybe within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrO2 film formed into a dielectric capacitor and the amorphous film is annealed to change its amorphous phase to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(C6H5)3, Bi(o-C7H7)3, Bi(O-C2H5)3, Bi(O-iC3H7)3, Bi(O- tC4H9)3, Bi(O-tC5H11)3, Sr(THD)2, Sr(THD)2 tetraglyme, Sr(Me5C5)2·2THF, Ti(i-OC3H7)4, TiO(THD)2, Ti(THD)2(i-OC3H7)2, Ta(i-OC3H7)5, Ta(iOC3H7)4THD, Nb(i-OC3H7)5, Nb(i- OC3H7)4THD.
摘要翻译：在介质电容器的制造方法中，依次在Si衬底上制造IrO2膜，Ir膜，非晶膜和Pt膜。 SBT膜可以包含BixSryTa2.0Oz，其中原子组成比可以在0 <= Sr / Ti <=1.0,0≤Ba/Ti≤1.0的范围内。将形成为介电电容器的Pt膜，非晶膜，Ir膜和IrO 2膜与非晶膜退火，将其非晶相变为钙钛矿型结晶结构的结晶相，由此得到SBT膜。该方法可以包括由选自Bi（C 6 H 5）3，Bi（o-C 7 H 7）3，Bi（O-C 2 H 5）3，Bi（O-C 3 H 7）3， Bi（O-tC4H9）3，Bi（O-tC5H11）3，Sr（THD）2，Sr（THD）2四聚体，Sr（Me5C5）2.2THF，Ti（i-OC3H7）4，TiO（THD） Ti（I-OC3H7）2，（i-OC3H7）2，Ta（i-OC3H7）5，Ta（iOC3H7）4THD，Nb（i-OC3H7）5，Nb（i-OC3H7）4THD。

6. 发明授权

US6114199A Manufacturing method for ferroelectric film and nonvolatile memory using the same 失效
标题翻译：铁电薄膜的制造方法和使用其的非易失性存储器
公开(公告)号：US6114199A
公开(公告)日：2000-09-05
申请号：US704288
申请日：1996-08-28
申请人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami , Christian Gutleben
发明人： Chiharu Isobe , Masataka Sugiyama , Katsuyuki Hironaka , Takaaki Ami , Christian Gutleben
IPC分类号： C01B13/14 , H01L21/02 , H01L21/316 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507 , H01L28/55
摘要： A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N.sub.2 O, or NO.sub.2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.
摘要翻译：在包含臭氧，N 2 O，NO 2等氧化性气体的活性氧气氛中，对铁电薄膜进行热处理，防止薄膜的氧缺陷（氧空位）的发生，避免电介质的劣化，铁电特性，铁电薄膜所需的电特性，例如介电常数的降低，漏电流的增加，剩余极化的减少以及矫顽电场的增加。因此，可以形成具有稳定特性的铁电薄膜。此外，形成使用该铁电薄膜作为电容器的非易失性存储单元。

7. 发明授权

US5976624A Process for producing bismuth compounds, and bismuth compounds 失效
标题翻译：铋化合物和铋化合物的制备方法
公开(公告)号：US5976624A
公开(公告)日：1999-11-02
申请号：US700030
申请日：1996-08-20
申请人： Takaaki Ami , Katsuyuki Hironaka , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Yuji Ikeda
IPC分类号： C01G29/00 , C01G33/00 , C01G35/00 , C04B35/453 , C04B35/495 , C23C14/08 , C23C16/40 , C23C16/56 , H01G4/12 , H01L21/822 , H01L27/04
CPC分类号： C01G33/006 , C01G35/006 , C04B35/453 , C04B35/495 , C23C16/40 , C23C16/56 , H01G4/1254 , C01P2002/20 , C01P2002/36 , C01P2002/72 , C01P2006/40
摘要： The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.
摘要翻译：抑制由铋化合物构成的电介质或铁电体中的导电相的形成。描述了一种铋化合物的制造方法，其包括在0.01〜50乇的压力下在气氛下引入原料气体，在基板上沉积铋化合物的前体，并在氧化气氛中进行热处理。

8. 发明授权

US5904766A Process for preparing bismuth compounds 失效
标题翻译：铋化合物的制备方法
公开(公告)号：US5904766A
公开(公告)日：1999-05-18
申请号：US732923
申请日：1996-10-17
申请人： Takaaki Ami , Katsuyuki Hironaka , Koji Watanabe , Akio Machida
发明人： Takaaki Ami , Katsuyuki Hironaka , Koji Watanabe , Akio Machida
IPC分类号： C01G35/00 , C04B35/495 , C30B25/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , C30B1/10
CPC分类号： C04B35/495 , C30B25/02 , C30B29/22
摘要： Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.
摘要翻译：提供了在比常规低的热处理温度下制备铋化合物的方法。通过在真空下加热以形成还原相并在正常或低压的氧化环境下加热的步骤制备铋化合物。

9. 发明授权

US07306751B2 Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles 失效
标题翻译：结晶超细颗粒，复合材料，制造结晶超细颗粒的方法，倒置胶束，倒置胶束包封前体超微粒，反胶束包封结晶超细颗粒和前体超细颗粒
公开(公告)号：US07306751B2
公开(公告)日：2007-12-11
申请号：US11490069
申请日：2006-07-21
申请人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
发明人： Hiroki Naito , Yuichi Ishida , Masayuki Suzuki , Keiko Furukawa , Katsuyuki Hironaka
IPC分类号： C09K11/64 , C09K11/55
CPC分类号： C09K11/7792 , B82Y30/00 , C09K11/025 , C09K11/7734 , D01F1/04 , Y10S977/811 , Y10S977/834 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2998
摘要： Crystalline superfine particles capable of emitting light depending upon a time-rate-of-change of a stress and controlled in grain size in the range from 5 nm to 100 nm are complexed with another material such as resin. The crystalline superfine particles are manufactured by using aggregates of molecules, i.e. inverted micelles, which orient hydrophilic groups of surfactant molecules inward and hydrophobic groups outward in a nonpolar solvent and which contain metal ions of a metal for forming the crystalline superfine particles dissolved in water inside the inverted micelles. Alternatively, they are manufactured by using inverted micelles enveloping precursor superfine particles, in which precursor superfine particles are enveloped in water inside the inverted micelles. The crystalline superfine particles are excellent in dispersibility in another material to be complexed, enhanced in emission efficiency and usable to make a transparent stress emission material. The complex material obtained is used to manufacture artificial light-emitting hair structures, artificial light-emitting skin, artificial light-emitting bodies, artificial light-emitting fabrics, and others.
摘要翻译：能够根据应力的变化时间变化发光并在5nm〜100nm的范围内控制晶粒尺寸的结晶超微粒与另一种材料如树脂复合。结晶超细颗粒通过使用分子的聚集体即反胶束来制造，所述分子将表面活性剂分子的亲水基团向内取向，并且疏水基团在非极性溶剂中向外定向并且含有金属的金属离子，以形成溶解在水中的结晶超细颗粒反胶束。或者，它们通过使用反胶束包封前体超细颗粒来制造，其中前体超细颗粒被包封在反胶束内的水中。结晶超细颗粒在另一种复合材料中的分散性优异，发光效率提高，可用于制造透明应力发射材料。所得的复合材料用于制造人造发光毛发结构，人造发光皮，人造发光体，人造发光织物等。

10. 发明申请

US20100295037A1 Thin film transistor, display, and electronic apparatus 审中-公开
标题翻译：薄膜晶体管，显示器和电子设备
公开(公告)号：US20100295037A1
公开(公告)日：2010-11-25
申请号：US12662033
申请日：2010-03-29
申请人： Katsuyuki Hironaka
发明人： Katsuyuki Hironaka
IPC分类号： H01L29/786 , H01L29/04 , H01L33/16 , H01L33/26
CPC分类号： H01L29/78693 , H01L27/1225 , H01L27/124 , H01L27/3244
摘要： Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide.
摘要翻译：本文公开了一种薄膜晶体管，其包括：与半导体层接触地设置的包括无定形氧化物的半导体层以及源电极和漏电极。源极和漏极通过使用铱或氧化铱形成。

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