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1. 发明授权

US07598111B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07598111B2
公开(公告)日：2009-10-06
申请号：US11683288
申请日：2007-03-07
申请人： Choong-Youl Im , Tae-Wook Kang , Chang-Yong Jeong
发明人： Choong-Youl Im , Tae-Wook Kang , Chang-Yong Jeong
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136231 , H01L27/1214 , H01L27/1248 , H01L27/3244
摘要： A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above. This thin film transistor may be appropriately applied to the active matrix organic electro luminescence display.
摘要翻译：公开了一种薄膜晶体管及其制造方法。更具体地说，提供一种具有薄膜晶体管的薄膜晶体管及其制造方法，其中无机层和有机平面化层依次形成在薄膜晶体管的源极/漏极上的衬底的表面上具有半导体层，栅极，源极/漏极区域和源极/漏极电极，并且对有机平坦化层进行覆盖蚀刻工艺以平坦化无机层。在无机层上形成光致抗蚀剂图案之后，进行蚀刻处理以形成将像素电极与源/漏电极中的一个耦合的孔。根据制造方法，可以使用一个掩模形成孔，从而简化制造工艺，并且通过上述形成的无机层改善与像素电极的粘合性。该薄膜晶体管可以适当地应用于有源矩阵有机电致发光显示器。

2. 发明授权

US07026649B2 Thin film transistor and active matrix flat panel display using the same 有权
标题翻译：薄膜晶体管和有源矩阵平板显示器使用相同
公开(公告)号：US07026649B2
公开(公告)日：2006-04-11
申请号：US10930896
申请日：2004-08-31
申请人： Tae-Wook Kang , Chang-Yong Jeong , Choong-Youl Im
发明人： Tae-Wook Kang , Chang-Yong Jeong , Choong-Youl Im
IPC分类号： H01L29/04
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/3244 , H01L29/41733
摘要： A thin film transistor and an active matrix flat panel device. By forming a conductive material layer having multiple profiles, critical dimension (CD) bias is reduced and step coverage is enhanced. The thin film transistor includes the conductive material layer formed on an insulating substrate, wherein the conductive material layer is composed of at least one thin film transistor conductive material layer, and an edge portion of the conductive material layer is composed of multiple profiles with multiple edge taper angles.
摘要翻译：薄膜晶体管和有源矩阵平板器件。通过形成具有多个轮廓的导电材料层，降低了临界尺寸（CD）偏压并增强了台阶覆盖。薄膜晶体管包括形成在绝缘基板上的导电材料层，其中导电材料层由至少一个薄膜晶体管导电材料层构成，并且导电材料层的边缘部分由具有多个边缘的多个型材组成锥角。

3. 发明申请

US20050045887A1 Thin film transistor and active matrix flat panel display using the same 有权
标题翻译：薄膜晶体管和有源矩阵平板显示器使用相同
公开(公告)号：US20050045887A1
公开(公告)日：2005-03-03
申请号：US10930896
申请日：2004-08-31
申请人： Tae-Wook Kang , Chang-Yong Jeong , Choong-Youl Im
发明人： Tae-Wook Kang , Chang-Yong Jeong , Choong-Youl Im
IPC分类号： H01L29/786 , G02F1/136 , G09F9/00 , H01L27/12 , H01L27/32 , H01L29/417 , H01L29/423 , H01L31/036
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/3244 , H01L29/41733
摘要： A thin film transistor and an active matrix flat panel device. By forming a conductive material layer having multiple profiles, critical dimension (CD) bias is reduced and step coverage is enhanced. The thin film transistor includes the conductive material layer formed on an insulating substrate, wherein the conductive material layer is composed of at least one thin film transistor conductive material layer, and an edge portion of the conductive material layer is composed of multiple profiles with multiple edge taper angles.
摘要翻译：薄膜晶体管和有源矩阵平板器件。通过形成具有多个轮廓的导电材料层，降低了临界尺寸（CD）偏压并增强了台阶覆盖。薄膜晶体管包括形成在绝缘基板上的导电材料层，其中导电材料层由至少一个薄膜晶体管导电材料层构成，并且导电材料层的边缘部分由具有多个边缘的多个型材组成锥角。

4. 发明授权

US08168531B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08168531B2
公开(公告)日：2012-05-01
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/4763
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

5. 发明申请

US20050285114A1 Electroluminescence display device and method of manufacturing the same 有权
标题翻译：电致发光显示装置及其制造方法
公开(公告)号：US20050285114A1
公开(公告)日：2005-12-29
申请号：US11145955
申请日：2005-06-07
申请人： Tae-Wook Kang , Chang-Soo Kim , Chang-Yong Jeong
发明人： Tae-Wook Kang , Chang-Soo Kim , Chang-Yong Jeong
IPC分类号： H05B33/26 , H01L27/32 , H01L29/04 , H01L51/52 , H05B33/10
CPC分类号： H01L51/5203 , H01L27/3244 , H01L51/5271
摘要： An electroluminescence display device including a thin film transistor layer formed on a substrate, at least one insulating layer, and a pixel layer that includes a first electrode layer, a second electrode layer, and an intermediate layer interposed between the first electrode layer and the second electrode layer and having at least an emitting layer. The pixel layer further includes a reflection layer that is disposed under the first electrode layer and that extends to a via hole formed in the insulating layer, and an auxiliary conductive layer is disposed under the reflection layer. The auxiliary conductive layer extends to the via hole, and the first electrode layer contacts at least a portion of the auxiliary conductive layer.
摘要翻译：一种电致发光显示装置，其包括形成在基板上的薄膜晶体管层，至少一个绝缘层和像素层，所述像素层包括插入在所述第一电极层和所述第二电极层之间的第一电极层，第二电极层和中间层电极层，并且具有至少一个发光层。像素层还包括设置在第一电极层下方并延伸到形成在绝缘层中的通孔的反射层，并且辅助导电层设置在反射层下方。辅助导电层延伸到通孔，并且第一电极层接触辅助导电层的至少一部分。

6. 发明申请

US20120146143A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120146143A1
公开(公告)日：2012-06-14
申请号：US13162836
申请日：2011-06-17
申请人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook KANG , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/786 , H01L23/522
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

7. 发明授权

US08022898B2 Flat panel display device 有权
标题翻译：平板显示设备
公开(公告)号：US08022898B2
公开(公告)日：2011-09-20
申请号：US11117666
申请日：2005-04-29
申请人： Tae-Wook Kang , Chang-Yong Jeong
发明人： Tae-Wook Kang , Chang-Yong Jeong
IPC分类号： G09G3/30
CPC分类号： G09G3/3225 , G09G2300/0426 , G09G2300/0439 , G09G2300/0465 , G09G2320/0233
摘要： Provided is a flat display device having a display region in which more than one thin film transistor and more than one pixel are included. The device includes a driving line that supplies driving power to the display region, and an auxiliary driving line, which is coupled with the driving line, is formed in a different layer from the driving line. The driving line may be an identical layer to the source/drain electrodes of the display region.
摘要翻译：提供一种具有显示区域的平面显示装置，其中包括多于一个的薄膜晶体管和多于一个的像素。该装置包括向显示区域提供驱动力的驱动线，与驱动线耦合的辅助驱动线形成在与驱动线不同的层中。驱动线可以是与显示区域的源/漏电极相同的层。

8. 发明申请

US20050263761A1 Thin film transistor, flat panel display having the same and a method of fabricating each 有权
标题翻译：薄膜晶体管，平板显示器及其制造方法
公开(公告)号：US20050263761A1
公开(公告)日：2005-12-01
申请号：US11124124
申请日：2005-05-09
申请人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
发明人： Chang-Soo Kim , Tae-Wook Kang , Chang-Yong Jeong , Jae-Young Oh , Sang-Il Park , Seong-Moh Seo
IPC分类号： G02F1/1368 , G02F1/136 , G09F9/30 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/32 , H01L29/04 , H01L29/10 , H01L29/15 , H01L29/745 , H01L29/76 , H01L29/786 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L51/52
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1248 , H01L27/3262 , H01L51/5284
摘要： A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
摘要翻译：提供具有双缓冲结构的TFT及其制造方法，以及具有该TFT的平板显示器及其制造方法。 TFT包括由衬底上的非晶硅层形成的第一缓冲层，形成在第一缓冲层上的第二缓冲层。 TFT还包括形成在第二缓冲层上的半导体层和形成在半导体层上的栅电极。双缓冲结构为从衬底扩散的杂质提供更好的屏障，并且还用作黑色矩阵以减少不必要的反射，并且是氢源来钝化其它层。

9. 发明授权

US07985992B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07985992B2
公开(公告)日：2011-07-26
申请号：US12434048
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L29/76
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔和暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

10. 发明申请

US20090275176A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090275176A1
公开(公告)日：2009-11-05
申请号：US12434072
申请日：2009-05-01
申请人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
发明人： Tae-Wook Kang , Chang-Yong Jeong , Chang-Soo Kim , Chang-Su Seo , Moon-Hee Park
IPC分类号： H01L21/336 , H01L21/20 , H01L21/768
CPC分类号： H01L29/41733 , H01L21/76804 , H01L27/124 , H01L27/1248 , H01L29/66757
摘要： A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要翻译：一种半导体器件及其制造方法，其形成具有多个锥形角的多个型材的接触孔，通孔或通孔接触孔。所述半导体器件包括衬底，形成在所述衬底上并具有半导体层，栅极绝缘层，栅极电极和层间电介质的薄膜晶体管，以及穿过所述栅极绝缘层和所述层间电介质的接触孔以及暴露半导体层的一部分。接触孔具有多个轮廓，其中接触孔的上部具有湿蚀刻轮廓，并且接触孔的下部具有湿蚀刻轮廓和干蚀刻轮廓中的至少一个。

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